GBU8G: 产品描述Operational Amplifiers - Op Amps; 产品类别分立半导体二极管; 文件大小338KB，共4页; 制造商GeneSiC; 官网地址http://www.genesicsemi.com/

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GBU8G概述

Operational Amplifiers - Op Amps

GBU8G规格参数

参数名称	属性值
是否无铅	不含铅
厂商名称	GeneSiC
包装说明	R-PSFM-T4
Reach Compliance Code	compliant
最小击穿电压	400 V
外壳连接	ISOLATED
配置	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON
二极管类型	BRIDGE RECTIFIER DIODE
JESD-30 代码	R-PSFM-T4
最大非重复峰值正向电流	200 A
元件数量	4
相数	1
端子数量	4
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	8 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
最大重复峰值反向电压	400 V
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
Base Number Matches	1

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GBU8A thru GBU8G

Single Phase Glass Passivated

Silicon Bridge Rectifier

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• High case dielectric strength of 1500 V

RMS

• Glass passivated chip junction

• Ideal for printed circuit boards

• High surge overload rating

• High temperature soldering guaranteed: 260⁰C/ 10

seconds, 0.375 (9.5mm) lead length

• Not ESD Sensitive

GBU Package

RRM

= 50 V - 400 V

= 8 A

Mechanical Data

Case: Molded plastic body over passivated junctions

Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.

Mounting position: Any

Maximum ratings at Tc = 25 °C, unless otherwise specified

Parameter

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

Symbol

RRM

RMS

stg

Conditions

GBU8A

-55 to 150

GBU8B

100

-55 to 150

GBU8D

200

140

200

-55 to 150

GBU8G

400

280

400

-55 to 150

Unit

°C

Electrical characteristics at Tc = 25 °C, unless otherwise specified

Single phase, half sine wave, 60 Hz, resistive or inductive load

For capacitive load derate current by 20%

Parameter

Maximum average forward rectified

current

1,2

Peak forward surge current

Maximum instantaneous forward

voltage drop per leg

Maximum DC reverse current at

rated DC blocking voltage per leg

Rating for fusing

Symbol

FSM

ΘJA

ΘJL

Conditions

= 100 °C

= 8.3 ms, half sine

= 8 A

= 25 °C

= 125 °C

t < 8.3 ms

GBU8A

8.0

200

1.1

500

166

211

2.2

GBU8B

8.0

200

1.1

500

166

211

2.2

GBU8D

8.0

200

1.1

500

166

211

2.2

GBU8G

8.0

200

1.1

500

166

211

2.2

°C/W

Unit

μA

sec

Typical junction capacitance per

leg

Typical thermal resistance per leg

1,2

- Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink

- Recommended mounted position is to bolt down device on a heatsink with silicon

thermal compond for maximum heat transfer using #6 screw.

- Measured at 1.0 MHz and applied reverse bias of 4.0 V

Apr 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/

GBU8G相似产品对比

	GBU8G	GBU8D
描述	Operational Amplifiers - Op Amps	Bridge Rectifiers 200V 8A Bridge Rectifier
是否无铅	不含铅	不含铅
厂商名称	GeneSiC	GeneSiC
包装说明	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	compliant	compliant
最小击穿电压	400 V	200 V
外壳连接	ISOLATED	ISOLATED
配置	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON	SILICON
二极管类型	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 代码	R-PSFM-T4	R-PSFM-T4
最大非重复峰值正向电流	200 A	200 A
元件数量	4	4
相数	1	1
端子数量	4	4
最高工作温度	150 °C	150 °C
最低工作温度	-55 °C	-55 °C
最大输出电流	8 A	8 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
最大重复峰值反向电压	400 V	200 V
表面贴装	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
Base Number Matches	1	1

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