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MJE16002

产品描述5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS
文件大小227KB，共10页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MJE16002概述

5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE16002/D
Designer's
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed switching of inductive
circuits where fall time and RBSOA are critical. They are particularly well–suited for
line–operated switchmode applications.
The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for
applications where drive current is limited.
Typical Applications:
Switching Regulators
High Resolution Deflection Circuits
Inverters
Motor Drives
Fast Switching Speeds
50 ns Inductive Fall Time @ 75
_
C (Typ)
70 ns Crossover Time @ 75
_
C (Typ)
•
100
_
C Performance Specified for:
Reverse–Biased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents
•
•
•
•
•
™
Data Sheet
MJE16002 *
MJE16004 *
*Motorola Preferred Device
5.0 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
80 WATTS
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CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
450
850
6.0
5.0
10
4.0
8.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
Total Power Dissipation @ TC = 25
_
C
@ TC = 100
_
C
Derate above TC = 25
_
C
80
32
0.64
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
TL
Max
Unit
Thermal Resistance, Junction to Case
1.56
275
_
C/W
_
C
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 2
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

MJE16002相似产品对比

MJE16002 MJE16004
描述 5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS 5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS

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