PD - 95292
IRF7834PbF
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l
Lead-Free
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
30V 4.5m @V
GS
= 10V
:
8
7
Qg (typ.)
29nC
S
S
S
G
1
A
A
D
D
D
D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
19
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
Junction-to-Drain Lead
g
Junction-to-Ambient
fg
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
www.irf.com
9/21/04
1
IRF7834PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
85
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
3.6
4.4
–––
- 5.2
–––
–––
–––
–––
–––
29
7.5
2.7
9.8
9.0
12.5
19
13.7
14.3
18
5.0
3710
810
350
–––
–––
4.5
5.5
2.25
–––
1.0
150
100
-100
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 16A
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 19A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
e
= 16A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 16A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 16A
Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
25
16
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
21
13
3.1
A
160
1.0
32
20
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 15V
di/dt = 100A/µs
Ã
e
e
2
www.irf.com
IRF7834PbF
1000
VGS
TOP
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
1000
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
10
10
2.5V
1
2.5V
> 60µs PULSE WIDTH
Tj = 25°C
> 60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
1.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 20A
VGS = 10V
100.00
T J = 150°C
10.00
1.0
1.00
T J = 25°C
0.10
VDS = 10V
> 60µs PULSE WIDTH
0.01
2.0
3.0
4.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7834PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12
ID= 16A
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
T J = 150°C
10.0
100
10
1.0
T J = 25°C
VGS = 0V
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100µsec
1msec
10msec
100
1000
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7834PbF
20
2.2
16
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
1.8
12
ID = 250µA
1.4
8
4
0
25
50
75
100
125
150
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
1.1659
9.9439
25.520
13.380
τi
(sec)
0.000184
0.153919
1.7486
49
0.1
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci= i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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