MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJE18002/D
™
Data Sheet
SWITCHMODE
™
Designer's
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18002 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
•
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
•
Tight Parametric Distributions are Consistent Lot–to–Lot
•
Two Package Choices: Standard TO–220 or Isolated TO–220
•
MJF18002, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Operating and Storage Temperature
Test No. 1 Per Fig. 1
Test No. 2 Per Fig. 2
Test No. 3 Per Fig. 3
(TC = 25°C)
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
—
—
—
50
0.4
MJE18002
MJF18002
Unit
Vdc
Vdc
Vdc
Adc
Adc
4500
3500
1500
25
0.2
V
450
1000
9.0
2.0
5.0
1.0
2.0
MJE18002*
MJF18002*
*Motorola Preferred Device
POWER TRANSISTOR
2.0 AMPERES
1000 VOLTS
25 and 50 WATTS
CASE 221A–06
TO–220AB
MJE18002
PD
TJ, Tstg
Symbol
R
θJC
R
θJA
TL
Watts
W/°C
°C
– 65 to 150
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
MJE18002
2.5
62.5
260
MJF18002
5.0
62.5
Unit
°C/W
°C
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF18002
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current
(VCE = 800 V, VEB = 0)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤
10%.
(2) Proper strike and creepage distance must be provided.
TC = 125°C
TC = 125°C
VCEO(sus)
ICEO
ICES
450
—
—
—
—
—
—
—
—
—
—
—
—
100
100
500
100
100
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
IEBO
µAdc
(continued)
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
MJE18002 MJF18002
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 125°C
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125°C
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)
@ TC = 125°C
DC Current Gain
(IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain
(IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 8.0 V)
Dynamic Saturation:
determined 1.0
µs
and
3.0
µs
after rising IB1
reach 0.9 final IB1
(see Figure 18)
IC = 0.4 A
IB1 = 40 mA
VCC = 300 V
IC = 1.0 A
IB1 = 0.2 A
VCC = 300 V
1.0
µs
3.0
µs
1.0
µs
3.0
µs
@ TC = 125°C
@ TC = 125°C
@ TC = 125°C
@ TC = 125°C
ton
@ TC = 125°C
toff
@ TC = 125°C
ton
@ TC = 125°C
toff
@ TC = 125°C
tfi
@ TC = 125°C
tsi
@ TC = 125°C
Crossover Time
@ TC = 125°C
Fall Time
Storage Time
@ TC = 125°C
Crossover Time
@ TC = 125°C
Fall Time
Storage Time
@ TC = 125°C
Crossover Time
@ TC = 125°C
tc
IC = 0.4 Adc, IB1 = 50 mAdc,
IB2 = 50 mAdc
tfi
@ TC = 125°C
tsi
tc
IC = 1.0 Adc, IB1 = 0.2 Adc,
IB2 = 0.5 Adc
tfi
@ TC = 125°C
tsi
tc
fT
Cob
Cib
VCE(dsat)
—
—
—
—
—
—
—
—
—
—
—
13
35
400
3.5
8.0
1.5
3.8
8.0
14
2.0
7.0
—
60
600
—
—
—
—
—
—
—
—
MHz
pF
pF
Vdc
hFE
VBE(sat)
VCE(sat)
—
—
—
—
14
—
11
11
6.0
5.0
10
0.2
0.2
0.25
0.3
—
27
17
20
8.0
8.0
20
0.5
0.5
0.5
0.6
34
—
—
—
—
—
—
—
—
—
0.825
0.92
1.1
1.25
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
µs)
Turn–On Time
Turn–Off Time
Turn–On Time
Turn–Off Time
IC = 0.4 Adc
IB1 = 40 mAdc
IB2 = 0.2 Adc
VCC = 300 V
IC = 1.0 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
VCC = 300 V
—
—
—
—
—
—
—
—
200
130
1.2
1.5
85
95
1.7
2.1
300
—
2.5
—
150
—
2.5
—
ns
µs
ns
µs
SWITCHING CHARACTERISTICS: Inductive Load
(Vclamp = 300 V, VCC = 15 V, L = 200
µH)
Fall Time
Storage Time
IC = 0.4 Adc, IB1 = 40 mAdc,
IB2 = 0.2 Adc
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
125
120
0.7
0.8
110
110
110
120
1.7
2.25
200
250
140
185
2.2
2.5
140
220
200
—
1.25
—
200
—
175
—
2.75
—
300
—
200
—
3.0
—
250
—
ns
µs
ns
ns
µs
ns
ns
µs
ns
2
Motorola Bipolar Power Transistor Device Data
MJE18002 MJF18002
TYPICAL STATIC CHARACTERISTICS
100
TJ = 125°C
VCE = 1 V
h FE, DC CURRENT GAIN
100
TJ = 125°C
TJ = 25°C
VCE = 5 V
h FE, DC CURRENT GAIN
TJ = 25°C
10
10
TJ = – 20°C
1
0.01
0.01
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
10.00
10.00
1
0.01
0.01
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
10.00
10.00
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
TJ = 25°C
V CE , VOLTAGE (VOLTS)
10.00
V CE , VOLTAGE (VOLTS)
1.00
1
2A
1.5 A
1A
0.4 A
0
0.001
0.001
IC = 0.2 A
0.010
0.100
0.010
0.100
IB, BASE CURRENT (mA)
1.000
1.000
0.10
IC/IB = 10
IC/IB = 5
0.01
0.01
0.01
TJ = 25°C
TJ = 125°C
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
10.00
10.00
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1.1
1.0
V BE, VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0.9
0.8
TJ = 25°C
0.7
0.6
TJ = 125°C
0.5
0.4
0.01
0.01
IC/IB = 10
IC/IB = 5
0.10
1.00
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
10.00
10.00
1000
Cib
100
TJ = 25°C
f = 1 MHz
10
Cob
1
1
1
10
100
10
100
VCE, COLLECTOR–EMITTER (VOLTS)
1000
1000
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJE18002 MJF18002
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
2500
IB(off) = IC/2
VCC = 300 V
PW = 20
µs
t, TIME (ns)
TJ = 125°C
IC/IB = 5
IC/IB = 10
4500
4000
3500
3000
t, TIME (ns)
1500
2500
2000
1500
1000
500
0
0.4
0.4
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
2.0
0
0.4
0.4
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
2.0
IC/IB = 10
TJ = 25°C
TJ = 125°C
IC/IB = 5
IB(off) = IC/2
VCC = 300 V
PW = 20
µs
2000
1000
TJ = 25°C
500
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
3000
2500
2000
t, TIME (ns)
1500
1000
500
0
0.4
0.4
IC/IB = 10
TJ = 25°C
TJ = 125°C
1.8
1.8
2.0
2.0
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
2500
IC = 1 A
t si, STORAGE TIME (ns)
IC/IB = 5
2000
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
1500
1000
500
IC = 0.4 A
TJ = 25°C
TJ = 125°C
11
11
hFE, FORCED GAIN
9
9
13
13
15
15
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
0
5
5
7
7
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time
600
500
400
t, TIME (ns)
300
200
100
0
0.4
tc
tfi
TJ = 25°C
TJ = 125°C
0.6
0.8
1.0
1.2
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
tc
450
400
350
300
t, TIME (ns)
tfi
250
200
150
100
50
0
0.4
0.6
tfi
tc
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
TJ = 25°C
TJ = 125°C
tc
tfi
0.8
1.0
1.2
1.4
1.6
1.4
1.6
IC, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
4
Motorola Bipolar Power Transistor Device Data
MJE18002 MJF18002
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
180
160
140
IC = 0.4 A
120
100
80
60
5
5
TJ = 25°C
TJ = 125°C
6
6
7
7
8
8
9
10
11
9
10
11
hFE, FORCED GAIN
12
12
13
13
14
14
15
15
IC = 1 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
250
230
210
TC, CROSS-OVER TIME (ns)
190
170
150
130
110
90
70
50
5
5
6
IC = 0.4 A
TJ = 25°C
TJ = 125°C
7
7
8
11
10
11
hFE, FORCED GAIN
9
12
13
14
15
IC = 1 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
t fi , FALL TIME (ns)
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
10.00
5 ms
I C, COLLECTOR CURRENT (AMPS)
DC (MJE18002)
1.00
DC (MJF18002)
1 ms
2.5
50
µs
10
µs
1
µs
I C, COLLECTOR CURRENT (AMPS)
2.0
TC
≤
125°C
IC/IB
≥
4
LC = 500
µH
1.5
1.0
0.10
0.5
0V
0
0
VBE(off) = 0.5 V
–1.5 V
600
800
1000
200
400
800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1200
0.01
10
10
100
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
1000
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe
Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
on T C = 25°C; T J(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25°C. Second break-
down limitations do not derate the same as thermal limita-
tions. Allowable current at the voltages shown on Figure 15
may be found at any case temperature by using the appropri-
ate curve on Figure 17. TJ(pk) may be calculated from the
data in Figures 20 and 21. At any case temperatures, thermal
limitations will reduce the power that can be handled to val-
ues less the limitations imposed by second breakdown. For
inductive loads, high voltage and current must be sustained
simultaneously during turn–off with the base to emitter junc-
tion reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode.
1.0
SECOND
BREAKDOWN
DERATING
POWER DERATING FACTOR
0.8
0.6
0.4
THERMAL
DERATING
0.2
0
20
40
60
80
100
120
120
TC, CASE TEMPERATURE (°C)
140
140
160
Figure 17. Forward Bias Power Derating
Motorola Bipolar Power Transistor Device Data
5
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