VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 30 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Low forward voltage drop
• 175 °C operating junction temperature
• Ultrafast recovery time
• Low leakage current
• Designed and qualified
JEDEC
®
-JESD 47
according
to
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
DESCRIPTION / APPLICATIONS
VS-60CPU04... series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
TO-247AC
2 x 30 A
400 V
0.92 V
37 ns
175 °C
Common cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters, and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, T
C
= 134 °C
T
J
= 25 °C
Rated V
R
, square wave, 20 kHz, T
C
= 134 °C
TEST CONDITIONS
VALUES
400
30
60
300
60
-65 to +175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 30 A
Forward voltage
V
F
I
F
= 30 A, T
J
= 150 °C
I
F
= 60 A
I
F
= 60 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
400
-
-
-
-
-
-
-
-
TYP.
-
1.10
0.92
1.25
1.10
-
-
40
12
MAX.
-
1.30
1.10
1.6
1.4
10
100
-
-
μA
pF
nH
V
UNITS
Revision: 18-Oct-16
Document Number: 93189
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
37
46
65
119
6.4
14.7
206
874
MAX.
40
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
0.6
-
0.5
6
0.21
-
MAX.
+175
1.0
40
-
-
-
12
(10)
60CPU04
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
I
F
- Instantaneous Forward Current (A)
1000
1000
I
R
- Reverse Current (μA)
100
10
1
0.1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
100
T
J
= 175 °C
T
J
= 125 °C
10
T
J
= 25 °C
0.01
0.001
T
J
= 25 °C
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
93189_02
50
100
150
200
250
300
350
400
93189_01
V
F
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 18-Oct-16
Document Number: 93189
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
10
0
93189_03
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
0.01
Single
pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
93189_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
60
160
DC
Average Power Loss (W)
50
40
RMS limit
30
20
10
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
0
5
10
15
20
25
30
35
40
45
140
120
Square
wave (D = 0.50)
Rated V
R
applied
See
note (1)
100
0
93189_05
5
10
15
20
25
30
35
40
45
93189_06
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 18-Oct-16
Document Number: 93189
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
1000
10 000
Vishay Semiconductors
Q
rr
(nC)
t
rr
(ns)
I
F
= 30 A, T
J
= 125 °C
100
I
F
= 30 A, T
J
= 25 °C
I
F
= 30 A, T
J
= 125 °C
1000
I
F
= 30 A, T
J
= 25 °C
10
100
93189_07
100
100
93189_08
1000
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 18-Oct-16
Document Number: 93189
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
60
2
C
3
P
4
U
5
04
6
-F3
7
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration: C = Common cathode
P = TO-247AC
U = Ultrafast rectifier
Voltage rating (04 = 400 V)
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-60CPU04-F3
VS-60CPU04-N3
QUANTITY PER TUBE
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?95542
www.vishay.com/doc?95007
www.vishay.com/doc?95398
Revision: 18-Oct-16
Document Number: 93189
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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