MOSFET 24V 85A N-Channel
| 参数名称 | 属性值 |
| Brand Name | ON Semiconductor |
| 是否无铅 | 不含铅 |
| 包装说明 | LEAD FREE, CASE 369D, IPAK-3 |
| 针数 | 4 |
| 制造商包装代码 | 369 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 85 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 24 V |
| 最大漏极电流 (Abs) (ID) | 12 A |
| 最大漏极电流 (ID) | 85 A |
| 最大漏源导通电阻 | 0.0052 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSIP-T3 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 78.1 W |
| 最大脉冲漏极电流 (IDM) | 192 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin (Sn) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| NTD85N02R-1G | NTD85N02R-001 | NTD85N02RG | NTD85N02RT4 | NTD85N02R | |
|---|---|---|---|---|---|
| 描述 | MOSFET 24V 85A N-Channel | MOSFET 24V 85A N-Channel | MOSFET 24V 85A N-Channel | MOSFET 24V 85A N-Channel | MOSFET 24V 85A N-Channel |
| 包装说明 | LEAD FREE, CASE 369D, IPAK-3 | CASE 369D, IPAK-3 | LEAD FREE, CASE 369AA, DPAK-3 | CASE 369AA, DPAK-3 | CASE 369AA, DPAK-3 |
| 针数 | 4 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | 369 | CASE 369D | CASE 369AA | CASE 369AA | CASE 369AA |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 雪崩能效等级（Eas） | 85 mJ | 85 mJ | 85 mJ | 85 mJ | 85 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 24 V | 24 V | 24 V | 24 V | 24 V |
| 最大漏极电流 (Abs) (ID) | 12 A | 32 A | 12 A | 12 A | 12 A |
| 最大漏极电流 (ID) | 85 A | 85 A | 85 A | 85 A | 85 A |
| 最大漏源导通电阻 | 0.0052 Ω | 0.0052 Ω | 0.0052 Ω | 0.0052 Ω | 0.0052 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e3 | e0 | e3 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 240 | 260 | 240 | 240 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 78.1 W | 2.4 W | 78.1 W | 78.1 W | 78.1 W |
| 最大脉冲漏极电流 (IDM) | 192 A | 192 A | 192 A | 192 A | 192 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES | YES | YES |
| 端子面层 | Tin (Sn) | Tin/Lead (Sn/Pb) | Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 40 | 30 | 40 | 30 | 30 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | - |
| Base Number Matches | 1 | 1 | - | - | 1 |
| 是否Rohs认证 | - | 不符合 | 符合 | 不符合 | 不符合 |
| 湿度敏感等级 | - | - | 1 | 1 | 1 |
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