SUM52N20-39P
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
200
r
DS(on)
(Ω)
0.038 at V
GS
= 15 V
0.039 at V
GS
= 10 V
I
D
(A)
52
52
Q
g
(Typ)
81
FEATURES
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
• 100 % R
g
and UIS Tested
APPLICATIONS
• Power Supply
- Primary Side
• Lighting
• Industrial
D
TO-263
G
G
D
S
S
N-Channel MOSFET
Top View
Ordering Information:
SUM52N20-39P-E3
(Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power
Dissipation
a
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
I
AS
E
AS
P
D
T
J
, T
stg
Limit
200
± 25
52
32.5
100
25
31
250
b
3.12
- 55 to 175
Unit
V
A
mJ
W
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
c
Symbol
R
thJA
R
thJC
Limit
40
0.5
Unit
°C/W
Document Number: 74297
S-62449-Rev. A, 27-Nov-06
www.vishay.com
1
SUM52N20-39P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= 200 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 200 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 15 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 100 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 150 °C
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
c
c
Symbol
Test Conditions
Min
200
2.5
Typ
Max
Unit
4.5
± 100
± 300
1
25
250
V
nA
µA
A
50
0.031
0.0305
0.039
0.038
0.071
0.094
25
4220
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
t
a
t
b
V
DS
= 15 V, I
D
= 20 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 100 V, V
GS
= 15 V, I
D
= 50 A
V
DS
= 100 V, V
GS
= 10 V, I
D
= 50 A
f = 1 MHz
V
DD
= 100 V, R
L
= 2
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
g
= 1
Ω
400
185
123
81
21
27
1.2
18
170
34
9
1.8
30
260
51
18
52
100
185
122
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
A
V
ns
A
µC
nS
I
F
= 20 A, V
GS
= 0 V
0.86
133
8
1.5
200
12
0.81
I
F
= 40 A, di/dt = 100 A/µs
0.54
94
39
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74297
S-62449-Rev. A, 27-Nov-06
SUM52N20-39P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 15, 12, 10,
8,
6 V
I
D
- Dr
a
in C
u
rrent (A)
I
D
- Dr
a
in C
u
rrent (A)
80
80
100
60
60
T
C
= 125 °C
40
40
20
5V
0
0
3
6
9
12
15
20
25 °C
- 55 °C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
150
0.045
Transfer Characteristics
g
fs
- Transconductance (S)
T
C
= - 55 °C
90
25 °C
r
D
S
(on)
- On-Re
s
i
s
t
a
nce (Ω)
120
0.041
0.037
V
GS
= 10 V
0.033
V
GS
= 15 V
0.029
125 °C
60
30
0
0
10
20
30
40
50
60
0.025
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.09
I
D
= 20 A
0.07
r
D
S
- On-Resistance (Ω)
150 °C
0.06
C - C
a
p
a
cit
a
nce (pF)
4480
5600
On-Resistance vs. Drain Current
C
iss
3360
0.05
2240
0.04
25 °C
1120
C
rss
C
oss
0.03
0
3
6
9
12
15
0
0
20
40
60
80
100
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74297
S-62449-Rev. A, 27-Nov-06
Capacitance
www.vishay.com
3
SUM52N20-39P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
V
DS
= 50, 100, 150 V
V
G
S
- G
a
te-to-
S
o
u
rce Volt
a
ge (V)
12
I
D
= 50 A
r
D
S
(on)
- On-Re
s
ii
s
t
a
nce
(Norm
a
lized)
2.4
V
GS
= 10 V
1.9
V
GS
= 15 V
1.4
2.9
I
D
= 20 A
9
6
3
0.9
0
0
30
60
90
120
150
0.4
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.7
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
V
G
S
(th)
V
a
ri
a
nce (V)
0.2
I
D
= 5 mA
1
T
J
=150 °C
- 0.3
- 0.8
I
D
= 250
µA
0.1
T
J
= 25 °C
- 1.3
0.01
- 1.8
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
- 2.3
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
250
I
D
= 10 mA
240
100
Threshold Voltage
230
V
(BR)VDSS (nomalized)
I
Dav
A
150 °C
10
25 °C
220
210
200
190
- 50
- 25
0
25
50
75
100
125
150
175
1
0.00001
0.0001
0.001
t
av
- (Sec)
0.01
0.1
T
J
- Temperature Junction (°C)
Drain Source Breakdown vs.
Junction Temperature
Single Pulse Avalanche
Current Capability vs. Time
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Document Number: 74297
S-62449-Rev. A, 27-Nov-06
SUM52N20-39P
Vishay Siliconix
THERMAL RATINGS
60
1000
48
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
*Limited
by
r
DS (on)
10
1 ms
T
C
= 25 °C
Single
Pulse
10 ms
100 ms
DC
100
µs
36
24
1
12
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.1
0.1
100
1
10
1000
V
DS
- Drain-to-Source Voltage (V)
*V
GS
>
minimum V
GS
at
which r
DS (on)
is
specified
Maximum Drain Curent vs.
Case Temperature
1
Duty Cycle = 0.5
Norm
a
lized Effective Tr
a
n
s
ient
Therm
a
l Imped
a
nce
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
10
-4
10
-3
10
-2
Square
Wave Pulse Duration (sec)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg?74297
Document Number: 74297
S-62449-Rev. A, 27-Nov-06
www.vishay.com
5
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