Freescale Semiconductor
Technical Data
Document Number: MRF7S38010H
Rev. 0, 8/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•
Typical WiMAX Performance: V
DD
= 30 Volts, I
DQ
= 160 mA, P
out
=
2 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM
3
/
4
, 4 bursts, 7 MHz
Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 15 dB
Drain Efficiency — 17%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW
Peak Tuned Output Power
•
P
out
@ 1 dB Compression Point
w
10 Watts CW
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF7S38010HR3
MRF7S38010HSR3
3400 - 3600 MHz, 2 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465I - 02, STYLE 1
NI - 400 - 240
MRF7S38010HR3
CASE 465J - 02, STYLE 1
NI - 400S - 240
MRF7S38010HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W CW
Case Temperature 77°C, 2 W CW
Symbol
R
θJC
Value
(2,3)
2.05
2.24
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S38010HR3 MRF7S38010HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 33.5
μAdc)
Gate Quiescent Voltage
(V
DD
= 30 Vdc, I
D
= 160 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 335 mAdc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.13
68.5
50.6
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.21
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 160 mA, P
out
= 2 W Avg., f = 3400 MHz and f = 3600 MHz,
WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in
0.5 MHz Channel Bandwidth @
±5.25
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
G
ps
η
D
PAR
ACPR
IRL
13
15
8
—
—
15
17
8.5
- 49
- 12
17
30
—
- 46
-6
dB
%
dB
dBc
dB
MRF7S38010HR3 MRF7S38010HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 160 mA, P
out
= 2 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P
out
= 2 W Avg.
Mask
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
RCE
EVM
—
—
—
—
—
—
—
- 26
- 38
- 43
- 60
- 60
- 33
2.3
—
—
—
—
—
—
—
dB
% rms
dBc
Relative Constellation Error @ P
out
= 2 W Avg.
(1)
Error Vector Magnitude
(1)
(Typical EVM Performance @ P
out
= 2 W Avg. with OFDM 802.16d
Signal Call)
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 160 mA, 3400 - 3600 MHz Bandwidth
Video Bandwidth @ 12 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 200 MHz Bandwidth @ P
out
= 2 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 10 W CW
Average Group Delay @ P
out
= 10 W CW, f = 3500 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 10 W CW,
f = 3500 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
1. RLE = 20Log(EVM/100)
VBW
—
20
—
MHz
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
1.04
2.22
1.88
25.9
0.025
0.246
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRF7S38010HR3 MRF7S38010HSR3
RF Device Data
Freescale Semiconductor
3
B1
V
BIAS
+
C5
C3
Z8
Z7
RF
INPUT Z1
C1
Z9
Z10
Z11
Z12 Z13
Z14
Z15
+
C4
C6
+
C7
V
SUPPLY
Z16
Z17
Z18
C2
Z19
RF
OUTPUT
Z2
Z3
Z4
Z5
Z6
DUT
Z1, Z19
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.750″ x 0.084″ Microstrip
0.596″ x 0.084″ Microstrip
0.288″ x 0.110″ Microstrip
0.450″ x 0.084″ Microstrip
0.067″ x 0.367″ Microstrip
0.083″ x 0.307″ Microstrip
0.830″ x 0.058″ Microstrip
0.567″ x 0.128″ Microstrip
0.116″ x 0.367″ Microstrip
0.064″ x 0.307″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
PCB
0.032″ x 0.166″ Microstrip
0.124″ x 0.538″ Microstrip
0.099″ x 0.341″ Microstrip
0.220″ x 0.166″ Microstrip
0.063″ x 0.240″ Microstrip
0.085″ x 0.340″ Microstrip
0.037″ x 0.340″ x 0.257″ Taper
0.637″ x 0.084″ Microstrip
CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF7S38010HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S38010HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3, C4
C5, C6, C7
Description
95
Ω,
100 MHz Long Ferrite Bead, Surface Mount
2.2 pF Chip Capacitor
2.7 pF Chip Capacitor
0.8 pF Chip Capacitors
22
μF,
35 V Tantalum Capacitors
Part Number
2743021447
ATC100B2R2JT500XT
ATC100B2R7BT500XT
ATC100B0R8BT500XT
T491X226K035AT
Manufacturer
Fair - Rite
ATC
ATC
ATC
Kemet
MRF7S38010HR3 MRF7S38010HSR3
4
RF Device Data
Freescale Semiconductor
C5
B1
C4
C3
C6 C7
C1
CUT OUT AREA
C2
MRF7S38010H/HS
Rev. 1
Figure 2. MRF7S38010HR3(HSR3) Test Circuit Component Layout
MRF7S38010HR3 MRF7S38010HSR3
RF Device Data
Freescale Semiconductor
5
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