NGTB20N120IHSWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
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•
•
•
•
•
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are Pb−Free Devices
20 A, 1200 V
V
CEsat
= 2.10 V
E
off
= 0.65 mJ
C
Typical Applications
•
Inductive Heating
•
Consumer Appliances
•
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ T
C
= 25°C
@ T
C
= 100°C
Pulsed collector current, T
pulse
limited by T
Jmax
Diode forward current
@ T
C
= 25°C
@ T
C
= 100°C
Diode pulsed current, T
pulse
limited
by T
Jmax
Gate−emitter voltage
Power Dissipation
@ T
C
= 25°C
@ T
C
= 100°C
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Symbol
V
CES
I
C
Value
1200
40
20
120
Unit
V
A
G
G
E
C
E
I
CM
I
F
A
A
TO−247
CASE 340L
STYLE 4
40
20
120
$20
156
62.5
−55
to +150
−55
to +150
260
MARKING DIAGRAM
I
FM
V
GE
P
D
A
V
W
20N120IHS
AYWWG
T
J
T
stg
T
SLD
°C
°C
°C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NGTB20N120IHSWG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 0
1
Publication Order Number:
NGTB20N120IHS/D
NGTB20N120IHSWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
R
qJC
R
qJC
R
qJA
Value
0.80
2.0
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 20 A
V
GE
= 0 V, I
F
= 20 A, T
J
= 150°C
V
F
−
−
1.55
1.65
1.75
−
V
T
J
= 25°C
V
CC
= 600 V, I
C
= 20 A
R
g
= 10
W
V
GE
= 0 V/ 15V
T
J
= 125°C
V
CC
= 600 V, I
C
= 20 A
R
g
= 10
W
V
GE
= 0 V/ 15V
t
d(off)
t
f
E
off
t
d(off)
t
f
E
off
−
−
−
−
−
−
160
160
0.65
167
205
1.20
−
−
−
−
−
−
mJ
mJ
ns
ns
V
CE
= 600 V, I
C
= 20 A, V
GE
= 15 V
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
−
−
−
−
−
−
3600
90
65
155
30
70
−
−
−
−
−
−
nC
pF
V
GE
=
0 V, I
C
= 500
mA
V
GE
= 15 V, I
C
= 20 A
V
GE
= 15 V, I
C
= 20 A, T
J
= 150°C
V
GE
= V
CE
, I
C
= 50
mA
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J =
150°C
V
GE
= 20 V, V
CE
= 0 V
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
1200
−
−
4.5
−
−
−
−
2.10
2.5
5.5
−
−
−
−
2.4
−
6.5
0.5
2.0
100
V
V
V
mA
nA
Test Conditions
Symbol
Min
Typ
Max
Unit
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NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
160
I
C
, COLLECTOR CURRENT (A)
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
T
J
= 25°C
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 13 V
11 V
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
10 V
9V
8V
7V
8
T
J
= 150°C
V
GE
= 20 to 15 V
13 V
11 V
10 V
9V
8V
7V
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
160
I
C
, COLLECTOR CURRENT (A)
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
9V
8V
7
7V
8
140
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 13 V
11 V
120
100
80
60
40
20
0
0
Figure 2. Output Characteristics
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
10 V
4
8
12
16
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
4
V
CE
, COLLECTOR−EMITTER
VOLTAGE (V)
I
C
= 40 A
CAPACITANCE (pF)
3
I
C
= 20 A
2
I
C
= 10 A
I
C
= 5 A
1
10,000
Figure 4. Typical Transfer Characteristics
C
ies
1000
100
C
oes
10
C
res
0
20
40
60
80
100 120 140
160 180 200
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
0
−50
−20
10
40
70
100
130
160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
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NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
120
V
GE
, GATE−EMITTER VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
100
T
J
= 25°C
80
T
J
= 150°C
60
40
20
0
16
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160 180
V
CE
= 600 V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
F
, FORWARD VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
E
off
, TURN−OFF SWITCHING LOSS (mJ)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10
W
120
140
160
SWITCHING TIME (ns)
1000
Figure 8. Typical Gate Charge
t
f
100
t
d(off)
10
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10
W
0
20
40
60
80
100
120
140
160
0
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
E
off
, TURN−OFF SWITCHING LOSS (mJ)
3.0
2.5
2.0
1.5
1.0
0.5
0
1
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
1000
Figure 10. Switching Time vs. Temperature
t
f
SWITCHING TIME (ns)
100
t
d(off)
10
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
8
14
20
26
32
38
44
8
14
20
26
32
38
44
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. I
C
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NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
E
off
, TURN−OFF SWITCHING LOSS (mJ)
2.0
1.6
1.2
0.8
0.4
0
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
J
= 150°C
5
15
25
35
45
55
65
75
85
1000
t
d(off)
t
f
100
SWITCHING TIME (ns)
10
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
J
= 150°C
5
15
25
35
45
55
65
75
85
1
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
E
off
, TURN−OFF SWITCHING LOSS (mJ)
2.0
1.6
1.2
0.8
0.4
0
V
GE
= 15 V
I
C
= 20 A
Rg = 10
W
T
J
= 150°C
375 425
475
525
575
625
675
725
775
1000
Figure 14. Switching Time vs. Rg
t
f
SWITCHING TIME (ns)
100
t
d(off)
10
V
GE
= 15 V
I
C
= 20 A
Rg = 10
W
T
J
= 150°C
375 425
475
525
575
625
675
725
775
1
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
CE
1000
I
C
, COLLECTOR CURRENT (A)
100
10
1
0.1
0.01
I
C(max)
Pulsed
50
ms
I
C(max)
Continuous
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
ms
1 ms
1000
I
C
, COLLECTOR CURRENT (A)
Figure 16. Switching Time vs. V
CE
100
10
V
GE
= 15 V, T
C
= 125°C
1
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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