SUD50N02-06
Vishay Siliconix
N-Channel 20-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
FEATURES
I
D
(A)
a, b
30
25
r
DS(on)
(W)
0.006 @ V
GS
= 4.5 V
0.009 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
100% R
g
Tested
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Order Number:
SUD50N02-06
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
20
"12
30
21
100
30
100
8.3
a, b
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec.
Maximum
Junction-to-Ambient
a
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board
b. t
v
10 sec.
Document Number: 71136
S-31724—Rev. C, 18-Aug-03
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SUD50N02-06
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 30 A
Drain-Source On-State Resistance
b
Forward Transconductance
b
r
DS(on)
g
fs
V
GS
= 4.5 V, I
D
=30 A, T
J
= 125_C
V
GS
= 2.5 V, I
D
= 20 A
V
DS
= 5 V, I
D
= 30 A
20
50
0.006
0.009
0.009
S
W
20
0.6
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Charge
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 0.2
W
I
D
^
50 A, V
GEN
= 4.5 V, R
G
= 2.5
W
1
25
120
80
100
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
,
,
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
6600
1150
600
65
13
14
3.1
40
180
120
150
ns
W
130
nC
pF
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
45
100
1.5
100
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
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FaxBack 408-970-5600
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Document Number: 71136
S-31724—Rev. C, 18-Aug-03
SUD50N02-06
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 4.5, 4 V
200
I
D
- Drain Current (A)
3V
I
D
- Drain Current (A)
150
2.5 V
3.5 V
120
100
80
60
40
20
1V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
1.5 V
0
0.0
0.5
1.0
1.5
Transfer Characteristics
100
50
2V
T
C
= 125_C
25_C
- 55_C
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
Transconductance
160
T
C
= - 55_C
g
fs
- Transconductance (S)
120
125_C
80
0.010
On-Resistance vs. Drain Current
r
DS(on)
- On-Resistance (
W
)
25_C
0.008
V
GS
= 2.5 V
0.006
V
GS
= 4.5 V
0.004
40
0.002
0
0
20
40
60
80
100
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10000
Capacitance
12
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 50 A
Gate Charge
8000
C - Capacitance (pF)
C
iss
9
6000
6
4000
2000
C
rss
0
4
8
C
oss
3
0
0
12
16
20
0
30
60
90
120
150
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
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Document Number: 71136
S-31724—Rev. C, 18-Aug-03
3
SUD50N02-06
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 30 A
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
r
DS(on)
- On-Resistance (
W)
(Normalized)
1.6
1.2
T
J
= 150_C
10
T
J
= 25_C
0.8
0.4
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Ambient Temperature
40
1000
Limited
by r
DS(on)
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
10
ms
100
ms
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25_C
Single Pulse
10 s
100 s
dc
Safe Operating Area
24
10
16
8
0
0
25
50
75
100
125
150
175
T
A
- Case Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 40_C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
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FaxBack 408-970-5600
Document Number: 71136
S-31724—Rev. C, 18-Aug-03
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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