SUM40N15-38
Vishay Siliconix
N-Channel 150-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
R
DS(on)
(Ω)
0.038 at V
GS
= 10 V
0.042 at V
GS
= 6 V
I
D
(A)
40
38
FEATURES
•
•
•
•
•
TrenchFET
®
Power MOSFETs
175 °C Junction Temperature
New Low Thermal Resistance Package
PWM Optimized
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
TO-263
G
G
D S
Top View
S
Ordering Information:
SUM40N15-38-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
DM
I
AR
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
E
AR
P
D
T
J
, T
stg
Limit
150
± 20
40
23
80
40
80
166
b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount TO-263 )
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
c
Symbol
R
thJA
R
thJC
Limit
40
0.9
Unit
°C/W
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
www.vishay.com
1
SUM40N15-38
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 120 V, V
GS
= 0 V
V
DS
= 120 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 120 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 6 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 °C
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 40 A, dI/dt = 100 A/µs
I
F
= 40 A, V
GS
= 0 V
1.0
100
5
0.25
V
DD
= 75 V, R
L
= 1.80
Ω
I
D
≅
40 A, V
GEN
= 10 V, R
g
= 2.5
Ω
V
DS
= 75 V, V
GS
= 10 V, I
D
= 40 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2500
290
190
2
38
13
13
15
130
30
90
25
200
45
140
ns
60
nC
Ω
pF
a
Symbol
Test Conditions
Min.
150
2
Typ.
Max.
Unit
4
± 100
1
50
250
V
nA
µA
A
80
0.030
0.033
0.038
0.042
0.076
0.100
10
Ω
g
fs
V
DS
= 15 V, I
D
= 15 A
S
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
40
80
1.5
150
8
0.6
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
SUM40N15-38
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
80
V
GS
= 10 V thru 7 V
60
6V
I
D
- Drain Current (A)
60
80
I
D
- Drain Current (A)
40
40
T
C
= 125 °C
20
20
5V
0
0
2
4
6
8
10
25 °C
0
0
1
2
3
4
5
- 55 °C
6
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
80
T
C
= - 55 °C
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
0.08
Transfer Characteristics
60
25 °C
0.06
V
GS
= 6 V
V
GS
= 10 V
0.04
125 °C
40
20
0.02
0
0
10
20
I
D
- Drain Current (A)
30
40
0.00
0
20
40
I
D
- Drain Current (A)
60
80
Transconductance
4000
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
3200
C - Capacitance (pF)
C
iss
2400
16
V
DS
= 75 V
I
D
= 40 A
12
1600
8
800
C
oss
0
0
C
rss
25
50
75
100
125
150
4
0
0
15
30
45
60
75
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
Gate Charge
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SUM40N15-38
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.7
2.4
R
DS(on)
- On-Resistance
(Normalized)
2.1
1.8
1.5
1.2
0.9
0.6
0.3
- 50
1
0
V
GS
= 10 V
I
D
= 15 A
I
S
- Source Current (A)
100
T
J
= 150 °C
10
T
J
= 25 °C
- 25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
195
I
D
= 1 mA
185
V
DS
(V)
175
165
155
145
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
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Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
SUM40N15-38
Vishay Siliconix
THERMAL RATINGS
45
1000
Limited
by R
DS(on)
*
10 µs
100 µs
10
1 ms
1
T
C
= 25 °C
Single Pulse
10 ms
100 ms, DC
36
I
D
- Drain Current (A)
100
27
18
9
0
0
25
50
75
100
125
150
175
I
D
- Drain Current (A)
0.1
0.1
1
10
100
1000
T
C
- Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72155.
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
www.vishay.com
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