74VHC125FT,74VHC126FT
CMOS Digital Integrated Circuits
Silicon Monolithic
74VHC125FT,74VHC126FT
1. Functional Description
• Quad Bus Buffer, Non-Inverted 3-State Outputs
74VHC125FT: Quad Bus Buffer
74VHC126FT: Quad Bus Buffer
2. General
The 74VHC125FT,74VHC126FT are high speed CMOS QUAD BUS BUFFERs fabricated with silicon gate
C
2
MOS technology.
They achieve the high speed operation similar to equivalent Bipolar Shottky TTL while maintaining the CMOS
low power dissipation.
The 74VHC125FT requires the 3-state control input G to be set high to place the output into the high impedance
state, whereas the 74VHC126FT requires the control input G to be set low to place the output into high impedance.
An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply
voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature: T
opr
= -40 to 125
High speed: Propagation delay time = 3.8 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 5.5 V
Low noise: V
OLP
= 0.8 V (max)
(10) Pin and function compatible with 74 series (AC/HC/AHC/LV etc.) 125 or 126 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP14B
Start of commercial production
©2016 Toshiba Corporation
1
2013-06
2016-08-18
Rev.4.0
74VHC125FT,74VHC126FT
5. Pin Assignment
74VHC125FT
74VHC126FT
6. Marking
74VHC125FT
74VHC126FT
7. IEC Logic Symbol
74VHC125FT
74VHC126FT
©2016 Toshiba Corporation
2
2016-08-18
Rev.4.0
74VHC125FT,74VHC126FT
8. Truth Table
Input G
(74VHC125FT)
H
L
L
Input G
(74VHC126FT)
L
H
H
Input An
X
L
H
Output Yn
Z
L
H
X:
Z:
Don't care
High impedance
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±50
180
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
V
CC
= 3.3
±
0.3 V
V
CC
= 5
±
0.5 V
Test Condition
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 100
0 to 20
Unit
V
V
V
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-08-18
Rev.4.0
74VHC125FT,74VHC126FT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.36
0.36
±0.25
±0.1
4.0
µA
µA
µA
V
V
V
Unit
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.48
3.80
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.44
0.44
±2.50
±1.0
40.0
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
4
2016-08-18
Rev.4.0
74VHC125FT,74VHC126FT
11.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.40
3.70
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.55
0.55
±10.0
±2.0
80.0
µA
µA
µA
V
V
V
Unit
V
11.4. AC Characteristics (Unless otherwise specified, T
a
= 25
, Input: t
r
= t
f
= 3 ns)
Characteristics
Propagation delay time
Part Number
74VHC125FT
Symbol
t
PLH
,t
PHL
Note
Test
Condition
V
CC
(V)
3.3
±
0.3
5.0
±
0.5
74VHC126FT
t
PLH
,t
PHL
3.3
±
0.3
5.0
±
0.5
3-state output enable time
t
PZL
,t
PZH
R
L
= 1 kΩ 3.3
±
0.3
5.0
±
0.5
3-state output disable time
Output skew
Input capacitance
Output capacitance
Power dissipation
capacitance
74VHC125FT
74VHC126FT
t
PLZ
,t
PHZ
t
osLH
,t
osHL
(Note 1)
C
IN
C
OUT
C
PD
(Note 2)
R
L
= 1 kΩ
3.3
±
0.3
5.0
±
0.5
3.3
±
0.3
5.0
±
0.5
C
L
(pF)
15
50
15
50
15
50
15
50
15
50
15
50
50
50
50
50
Min
Typ.
5.6
8.1
3.8
5.3
5.6
8.1
3.8
5.3
5.4
7.9
3.6
5.1
9.5
6.1
4
6
14
15
Max
8.0
11.5
5.5
7.5
8.0
11.5
5.5
7.5
8.0
11.5
5.1
7.1
13.2
8.8
1.5
1.0
10
pF
pF
pF
ns
ns
ns
ns
Unit
ns
Note 1: Parameter guaranteed by design. (t
osLH
= |t
PLH
m-t
PLH
n|, t
osHL
= |t
PHL
m-t
PHL
n|)
Note 2: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
I
CC(opr)
= C
PD
×
V
CC
×
f
IN
+ I
CC
/4 (per gate)
©2016 Toshiba Corporation
5
2016-08-18
Rev.4.0
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