19-4582; Rev 0; 4/09
SiGe, High-Linearity, 850MHz to 1550MHz
Up/Downconversion Mixer with LO Buffer
General Description
The MAX2051 high-linearity, up/downconversion mixer
provides +35dBm input IP3, 7.8dB noise figure (NF), and
7.4dB conversion loss for 850MHz to 1550MHz wireless
infrastructure and multicarrier cable head-end down-
stream video, video-on-demand (VOD), and cable
modem termination systems (CMTS) applications. The
MAX2051 also provides excellent suppression of spuri-
ous intermodulation products (> 77dBc at an RF level of
-14dBm), making it an ideal downconverter for DOCSIS
®
3.0 and Euro DOCSIS cable head-end systems. With an
LO circuit tuned to support frequencies ranging from
1200MHz to 2250MHz, the MAX2051 is ideal for high-
side LO injection applications over an IF frequency
range of 50MHz to 1000MHz.
In addition to offering excellent linearity and noise per-
formance, the MAX2051 also yields a high level of com-
ponent integration. The device integrates baluns in the
RF and LO ports, which allow for a single-ended RF
input and a single-ended LO input. The MAX2051
requires a typical LO drive of 0dBm and a supply cur-
rent guaranteed to below 130mA.
The MAX2051 is available in a compact 5mm x 5mm,
20-pin thin QFN package with an exposed pad.
Electrical performance is guaranteed over the extended
temperature range, from T
C
= -40°C to +85°C.
Features
♦
850MHz to 1550MHz RF Frequency Range
♦
1200MHz to 2250MHz LO Frequency Range
♦
50MHz to 1000MHz IF Frequency Range
♦
DOCSIS 3.0 and Euro DOCSIS Compatible
♦
7.4dB Typical Conversion Loss
♦
7.8dB Typical Noise Figure
♦
+24dBm Typical Input 1dB Compression Point
♦
+35dBm Typical Input IP3
♦
88dBc Typical 2RF-LO Rejection at P
RF
= -14dBm
♦
Integrated LO Buffer
♦
Integrated RF and LO Baluns for Single-Ended Inputs
♦
Low LO Drive (0dBm Nominal)
♦
External Current-Setting Resistor Provides Option
for Operating Device in Reduced-Power/
Reduced-Performance Mode
MAX2051
Ordering Information
PART
MAX2051ETP+
MAX2051ETP+T
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP*
Applications
Video-on-Demand and DOCSIS-Compatible
Edge QAM Modulation
Cable Modem Termination Systems
Microwave and Fixed Broadband Wireless
Access
Microwave Links
Military Systems
Predistortion Receivers
Private Mobile Radios
Integrated Digital Enhanced Network (iDEN
®
)
Base Stations
WiMAX™ Base Stations and Customer Premise
Equipment
Wireless Local Loop
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EP
= Exposed pad.
T = Tape and reel.
Pin Configuration/
Functional Block Diagram
GND
GND
+
RF
GND
GND
GND
GND
1
2
3
4
5
20
19
18
EP*
17
IF+
16
IF-
TOP VIEW
GND
15
V
CC
14 GND
13 GND
12
11
MAX2051
LO
GND
6
V
CC
7
LOBIAS
8
V
CC
9
GND
10
GND
DOCSIS and CableLabs are registered trademarks of Cable
Television Laboratories, Inc. (CableLabs
®
).
iDEN is a registered trademark of Motorola, Inc.
WiMAX is a trademark of WiMAX Forum.
TQFN
*EXPOSED PAD. CONNECT EP TO GND.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
SiGe, High-Linearity, 850MHz to 1550MHz
Up/Downconversion Mixer with LO Buffer
MAX2051
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ...........................................................-0.3V to +5.5V
RF, LO to GND.........................................................-0.3V to 0.3V
IF+, IF-, LOBIAS to GND ............................-0.3V to (V
CC
+ 0.3V)
RF, LO Input Power ........................................................+20dBm
RF, LO Current (RF and LO is DC shorted to GND
through balun).................................................................50mA
Continuous Power Dissipation (Note 1) ........................2100mW
θ
JA
(Notes 2, 3)..............................................................+33°C/W
θ
JC
(Note 3)........................................................................8°C/W
Operating Case Temperature Range
(Note 4) ...................................................T
C
= -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2:
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Note 4:
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, no input AC signals. T
C
= -40°C to +85°C, unless otherwise noted. Typical val-
ues are at V
CC
= +5.0V, T
C
= +25°C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
Total supply current
CONDITIONS
MIN
4.75
TYP
5
105
MAX
5.25
130
UNITS
V
mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency
LO Frequency
IF Frequency
LO Drive Level
SYMBOL
f
RF
f
LO
f
IF
P
LO
(Notes 5, 6)
(Note 5)
Meeting RF and LO frequency ranges; IF
matching components affect the IF
frequency range (Note 5)
CONDITIONS
MIN
850
1200
50
-3
TYP
MAX
1550
2250
1000
+9
UNITS
MHz
MHz
MHz
dBm
2
_______________________________________________________________________________________
SiGe, High-Linearity, 850MHz to 1550MHz
Up/Downconversion Mixer with LO Buffer
AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER OPERATION)
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm,
P
RF
= 0dBm, f
RF
= 1000MHz to 1250MHz, f
LO
= 1200MHz to 2250MHz, f
IF
= 50MHz to 1000MHz, f
RF
< f
LO
, T
C
= -40°C to +85°C.
Typical values are at V
CC
= +5.0V, P
RF
= 0dBm, P
LO
= 0dBm, f
RF
=1200MHz, f
LO
= 1700MHz, f
IF
= 500MHz, T
C
= +25°C, unless
otherwise noted.) (Note 7)
PARAMETER
Conversion Power Loss
Conversion Power Loss
Temperature Coefficient
Conversion Power Loss Variation
vs. Frequency
Noise Figure
Input 1dB Compression Point
SYMBOL
L
C
TC
L
ΔL
C
NF
SSB
IP
1dB
V
CC
= +5.0V,
f
RF1
= 1200MHz,
f
RF2
= 1201MHz,
P
RF
= 0dBm tone,
f
LO
= 1562MHz, P
LO
= 0dBm, T
C
= +25°C,
f
IF
= 362MHz (Notes 8, 9)
Single tone, f
RF
=1200MHz,
f
IF
= 192.5MHz to 857.5MHz,
f
LO
= 1392.5MHz to 2057.5MHz,
P
LO
= +3dBm, resultant
f
SPUR
= 1007.5MHz to 342.5MHz
(Notes 8, 9, 10)
2RF-LO Spurious Rejection
2x1
Single tone, f
RF
=1200MHz,
f
IF
= 857.5MHz to 1000MHz,
f
LO
= 2057.5MHz to 2200MHz,
P
LO
= +3dBm, resultant
f
SPUR
= 342.5MHz to 200MHz
(Notes 8, 9, 10)
Single tone, f
RF
=1200MHz,
f
IF
= 97.5MHz to 430MHz,
f
LO
= 1297.5MHz to 1630MHz,
P
LO
= +3dBm, resultant
f
SPUR
= 195MHz to 860MHz
(Notes 8, 9, 10)
2LO-2RF Spurious Rejection
2x2
Single tone, f
RF
=1200MHz,
f
IF
= 430MHz to 525MHz,
f
LO
= 1630MHz to 1725MHz,
P
LO
= +3dBm, resultant
f
SPUR
= 860MHz to 1050MHz
(Notes 8, 9, 10)
P
RF
=
-14dBm
P
RF
=
-10dBm
P
RF
=
0dBm
71.5
67.5
57.5
77.4
73.4
63.4
P
RF
=
-14dBm
P
RF
=
-10dBm
P
RF
=
0dBm
P
RF
=
-14dBm
P
RF
=
-10dBm
P
RF
=
0dBm
74
70
60
68
64
54
78
74
64
79
75
65
dBc
P
RF
=
-14dBm
P
RF
=
-10dBm
P
RF
=
0dBm
CONDITIONS
f
RF
= 1200MHz, f
LO
= 1700MHz,
f
IF
= 500MHz, T
C
= +25°C (Notes 8, 9)
T
C
= -40°C to +85°C
f
LO
= 1200MHz to 2250MHz
Single sideband
MIN
TYP
7.4
0.01
± 0.5
7.8
24
MAX
9
UNITS
dB
dB/°C
dB
dB
dBm
MAX2051
Third-Order Input Intercept Point
IIP3
33
35
dBm
73
69
59
88
84
74
dBc
_______________________________________________________________________________________
3
SiGe, High-Linearity, 850MHz to 1550MHz
Up/Downconversion Mixer with LO Buffer
MAX2051
AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER OPERATION) (continued)
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm,
P
RF
= 0dBm, f
RF
= 1000MHz to 1250MHz, f
LO
= 1200MHz to 2250MHz, f
IF
= 50MHz to 1000MHz, f
RF
< f
LO
, T
C
= -40°C to +85°C.
Typical values are at V
CC
= +5.0V, P
RF
= 0dBm, P
LO
= 0dBm, f
RF
=1200MHz, f
LO
= 1700MHz, f
IF
= 500MHz, T
C
= +25°C, unless
otherwise noted.) (Note 7)
PARAMETER
SYMBOL
CONDITIONS
Single tone, f
RF
= 1200MHz,
50MHz < f
IF
< 1000MHz,
1250MHz < f
LO
< 2200MHz
(Notes 8, 9)
P
LO
= +3dBm (Notes 6, 8)
P
LO
= +3dBm (Notes 8, 9)
f
RF
= 1200MHz, P
LO
= +3dBm (Notes 8, 9)
Z
RF
LO on and IF terminated with a matched
impedance
Z
LO
RF and IF terminated with a matched
impedance (Note 11)
Z
IF
Nominal differential impedance at the IC’s
IF outputs
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω single-ended
using external components shown in the
Typical Application Circuit
24
P
RF
=
-14dBm
P
RF
=
-10dBm
P
RF
= 0dBm
LO Leakage at RF Port
LO Leakage at IF Port
RF-to-IF Isolation
RF Input Impedance
RF Input Return Loss
LO Input Impedance
LO Input Return Loss
IF Output Impedance
MIN
87.5
79.5
59.5
TYP
101
93
73
-33.5
-26.3
51
50
12
50
11
50
-27.5
-22.9
dBm
dBm
dB
Ω
dB
Ω
dB
Ω
dBc
MAX
UNITS
3LO-3RF Spurious Rejection
3x3
IF Output Return Loss
15
dB
4
_______________________________________________________________________________________
SiGe, High-Linearity, 850MHz to 1550MHz
Up/Downconversion Mixer with LO Buffer
MAX2051
AC ELECTRICAL CHARACTERISTICS (UPCONVERTER OPERATION)
(Typical
Application Circuit,
RF and LO ports are driven from 50Ω sources, f
RF
< f
LO
. Typical values are at V
CC
= +5.0V, P
IF
= 0dBm,
P
LO
= 0dBm, f
RF
= 1250MHz, f
LO
= 1600MHz, f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 7)
PARAMETER
Conversion Power Loss
Third-Order Input Intercept
Point
LO-2IF Spurious Rejection
LO+2IF Spurious Rejection
LO-3IF Spurious Rejection
LO+3IF Spurious Rejection
LO Leakage at RF Port
IF Leakage at RF Port
RF Return Loss
IF Input Return Loss
f
LO
= 1200MHz
P
LO
= +3dBm
SYMBOL
L
C
IIP3
f
IF1
= 350MHz, f
IF2
= 351MHz, P
IF
= 0dBm/tone
CONDITIONS
MIN
TYP
7.5
33.4
61
63.3
78
79
-35.7
-52
12.3
18
MAX
UNITS
dB
dBm
dBc
dBc
dBc
dBc
dBm
dBm
dB
dB
Note 5:
Operation outside this range is possible, but with degraded performance of some parameters. See the
Typical Operating
Characteristics
section.
Note 6:
Not production tested.
Note 7:
All values reflect losses of external components, including a 0.6dB loss at f
IF
= 350MHz and a 0.8dB loss at
f
IF
= 1000MHz due to the 1:1 transformer. Output measurements were taken at IF outputs of the
Typical Application Circuit.
Note 8:
Guaranteed by design and characterization.
Note 9:
100% production tested for functionality.
Note 10:
Additional improvements (of up to 4dB to 6dB) in spurious responses can be made by increasing the LO drive to +6dBm.
Note 11:
The LO return loss can be improved by tuning C9 to offset any parasitics within the specific application circuit. Typical
range of C9 is 10pF to 50pF.
_______________________________________________________________________________________
5
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