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126359-HMC772LC4

产品描述RF Development Tools Eval PCB
产品类别开发板/开发套件/开发工具   
文件大小378KB,共6页
制造商ADI(亚德诺半导体)
官网地址https://www.analog.com
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126359-HMC772LC4概述

RF Development Tools Eval PCB

126359-HMC772LC4规格参数

参数名称属性值
产品种类
Product Category
RF Development Tools
制造商
Manufacturer
ADI(亚德诺半导体)
RoHSDetails
产品
Product
Evaluation Boards
类型
Type
RF Amplifiers
工具用于评估
Tool Is For Evaluation Of
HMC772LC4
频率
Frequency
2 GHz to 12 GHz
工作电源电压
Operating Supply Voltage
4 V
系列
Packaging
Bulk
工厂包装数量
Factory Pack Quantity
1

文档预览

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HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Typical Applications
This HMC772LC4 is ideal for:
Features
Noise Figure: 1.8 dB
Gain: 15 dB
Output IP3: +25 dBm
P1dB Output Power: +13 dBm
50 Ohm Matched Input/Output
Supply Voltage: +4V @ 45 mA
24 Lead Ceramic 4x4mm SMT Package: 16mm²
AMPLIFIERS - LOW NOISE - SMT
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
General Description
The HMC772LC4 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier which operates between 2 and
12 GHz. The amplifier provides 15 dB of gain, 1.8 dB
noise figure up to 12 GHz and output IP3 of +25 dBm,
while requiring only 45 mA from a +4V supply voltage.
The Psat output power of up to +15 dBm enables the
LNA to function as a LO driver for many of HIttite’s
balanced, I/Q or image reject mixers. The HMC772LC4
also features I/Os that are DC blocked and internally
matched to 50 Ohms, making it ideal for SMT based
high capacity microwave radio applications. The
HMC772LC4 is housed in a RoHS compliant 4x4 mm
QFN leadless ceramic package.
Electrical Specifications
,
T
A
= +25° C, Vdd= +4V, Idd = 45 mA*
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Output Third Order Intercept (IP3)
Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)*
* Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical.
14
Min.
Typ.
2 - 12
15
0.01
1.8
15
15
13
25
45
2.5
Max.
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
mA
1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery and to place orders: Hittite Microwave
other
For price, delivery, and to place orders: Analog Devices, Inc.,
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or
Corporation, 2 Elizabeth Drive,
9106, Norwood, MA 02062-9106
One Technology Way, P.O. Box
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com

126359-HMC772LC4相似产品对比

126359-HMC772LC4 HMC772LC4TR HMC772LC4
描述 RF Development Tools Eval PCB RF Mixer DBL-BAL Mixer SMT 9 - 15 GHz
产品种类
Product Category
RF Development Tools RF Amplifier RF Amplifier
制造商
Manufacturer
ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体)
RoHS Details Details Details
类型
Type
RF Amplifiers Low Noise Amplifier RF Amplifier
工作电源电压
Operating Supply Voltage
4 V 4 V 4 V
系列
Packaging
Bulk Reel Cut Tape
工厂包装数量
Factory Pack Quantity
1 100 50
产品
Product
Evaluation Boards GaAs pHEMT -
Operating Frequency - 2 GHz to 12 GHz 12 GHz
Gain - 15 dB 15 dB
NF - Noise Figure - 1.8 dB 1.8 dB
P1dB - Compression Point - 13 dBm 13 dBm
OIP3 - Third Order Intercept - 25 dBm 25 dBm
工作电源电流
Operating Supply Current
- 45 mA 45 mA
最小工作温度
Minimum Operating Temperature
- - 40 C - 40 C
最大工作温度
Maximum Operating Temperature
- + 85 C + 85 C
安装风格
Mounting Style
- SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
- QFN-24 QFN-24
Frequency Range - 2 GHz to 12 GHz 2 GHz to 12 GHz
Input Return Loss - 15 dB 15 dB
Number of Channels - 1 Channel 1 Channel
Pd-功率耗散
Pd - Power Dissipation
- 0.55 W 0.55 W
技术
Technology
- GaAs GaAs
单位重量
Unit Weight
- 0.032741 oz 0.288012 oz
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