MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL3281A/D
Designer's
Complementary NPN-PNP
Silicon Power Bipolar Transistor
The MJL3281A and MJL1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
™
Data Sheet
MJL3281A*
PNP
MJL1302A*
*Motorola Preferred Device
NPN
•
Designed for 100 W Audio Frequency
•
Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
•
Low Harmonic Distortion
•
High Safe Operation Area — 1 A/100 V @ 1 Second
•
High fT — 30 MHz Typical
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
200 WATTS
CASE 340G–02, STYLE 2
TO–264
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current — Continuous
Collector Current
— Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
200
200
7
200
15
25
1.5
200
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Emitter–Base Voltage
(IE = 100
m
Adc, IC = 0)
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
VCEO(sus)
200
VEBO
7
—
—
(continued)
—
—
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
©
Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1
MJL3281A MJL1302A
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
Emitter Cutoff Current
(VEB = 7 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
fT
—
Cob
—
—
600
30
—
pF
MHz
hFE
60
60
60
60
60
45
12
VCE(sat)
—
—
3
125
—
—
—
115
—
35
175
175
175
175
175
—
—
Vdc
IS/b
4
1
—
—
—
—
Adc
ICBO
—
IEBO
—
IEBO
—
—
25
—
5
µAdc
—
50
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
PNP MJL1302A
50
f T, CURRENT BANDWIDTH PRODUCT (MHz)
VCE = 10 V
40
5V
30
f T, CURRENT BANDWIDTH PRODUCT (MHz)
60
NPN MJL3281A
VCE = 10 V
50
5V
40
30
20
10
0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
TJ = 25°C
ftest = 1 MHz
20
10
0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
2
Motorola Bipolar Power Transistor Device Data
MJL3281A MJL1302A
TYPICAL CHARACTERISTICS
PNP MJL1302A
1000
1000
NPN MJL3281A
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
25°C
TJ = 100°C
100
TJ = 100°C
100
– 25°C
25°C
– 25°C
VCE = 20 V
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
10
0.1
VCE = 20 V
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJL1302A
1000
1000
NPN MJL3281A
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
25°C
TJ = 100°C
100
TJ = 100°C
100
25°C
– 25°C
– 25°C
VCE = 5 V
10
0.1
VCE = 5 V
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJL1302A
45
40
IC , COLLECTOR CURRENT (A)
35
30
25
20
15
10
5.0
0
0
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
25
TJ = 25°C
0.5 A
1A
1.5 A
IB = 2 A
IC, COLLECTOR CURRENT (A)
45
40
35
30
25
20
15
10
5.0
0
0
NPN MJL3281A
1.5 A
IB = 2 A
1A
0.5 A
TJ = 25°C
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
25
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
Motorola Bipolar Power Transistor Device Data
3
MJL3281A MJL1302A
TYPICAL CHARACTERISTICS
PNP MJL1302A
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
TJ = 25°C
IC/IB = 10
VBE(sat)
2.5
TJ = 25°C
IC/IB = 10
NPN MJL3281A
2.0
1.5
VBE(sat)
1.0
0.5
VCE(sat)
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
VCE(sat)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL1302A
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
TJ = 25°C
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
10
10
TJ = 25°C
NPN MJL3281A
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 11. Typical Base–Emitter Voltage
Figure 12. Typical Base–Emitter Voltage
100
10 ms
10
50 ms
1 sec
1.0
250 ms
TJ = 25°C
0.1
1.0
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
IC , COLLECTOR CURRENT (AMPS)
Figure 13. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
MJL3281A MJL1302A
TYPICAL CHARACTERISTICS
PNP MJL1302A
10000
Cib
10000
Cib
NPN MJL3281A
C, CAPACITANCE (pF)
1000
Cob
C, CAPACITANCE (pF)
1000
Cob
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
100
0.1
TJ = 25°C
ftest = 1 MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJL1302A Typical Capacitance
Figure 15. MJL3281A Typical Capacitance
Motorola Bipolar Power Transistor Device Data
5
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