MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL3281A/D
Designer's
Complementary NPN-PNP
Silicon Power Bipolar Transistor
•
The MJL3281A and MJL1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
•
Designed for 100 W Audio Frequency
•
Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
•
Low Harmonic Distortion
•
High Safe Operation Area — 1 A/100 V @ 1 sec
•
High fT — 30 MHz Typical
™
Data Sheet
MJL3281A*
PNP
MJL1302A*
*Motorola Preferred Device
NPN
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
200 WATTS
CASE 340G–02, STYLE 2
TO–264
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage — 1.5 V
Collector Current — Continuous
Collector Current
— Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
200
200
7
200
15
25
1.5
200
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
R
θJC
Max
0.7
Unit
°C/W
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
MJL3281A
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Emitter–Base Voltage
(IE = 100
µAdc,
IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
Emitter Cutoff Current
(VEB = 7 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2%.
fT
Cob
—
—
30
—
—
600
MHz
pF
hFE
60
60
60
60
60
45
12
VCE(sat)
—
125
—
—
—
115
—
35
—
175
175
175
175
175
—
—
3
Vdc
IS/b
4
1
—
—
—
—
Adc
VCEO(sus)
VEBO
ICBO
IEBO
IEBO
200
7
—
—
—
—
—
—
—
—
—
—
50
5
25
Vdc
Vdc
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
2
Motorola Bipolar Power Transistor Device Data
MJL3281A
TYPICAL CHARACTERISTICS
PNP MJL1302A
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
100
VCE = 10 V
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
100
VCE = 10 V
NPN MJL3281A
10
VCE = 5 V
10
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
1
0
1
2
3
4
5
6
7
8
TJ = 25°C
ftest = 1 MHz
1
0
1
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Current–Gain — Bandwidth Product
Figure 2. Current–Gain — Bandwidth Product
PNP MJL1302A
1000
1000
NPN MJL3281A
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
100
VCE = 20 V
100
VCE = 20 V
VCE = 5 V
VCE = 5 V
10
0.1
1
10
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
PNP MJL1302A
1000
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
25°C
100°C
100
1000
Figure 4. DC Current Gain
NPN MJL3281A
VCE = 5 V
25°C
100°C
100
– 25°C
– 25°C
10
0.1
1
10
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
Motorola Bipolar Power Transistor Device Data
3
MJL3281A
TYPICAL CHARACTERISTICS
PNP MJL1302A
VBE(on), BASE–EMITTER VOLTAGE (VOLTS)
TJ = 25°C
1.6
VBE(on), BASE–EMITTER VOLTAGE (VOLTS)
1.8
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
NPN MJL3281A
1.4
1.2
1
10
11
12
13
14
15
16
17
18
19
20
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Typical Base–Emitter Voltage
Figure 8. Typical Base–Emitter Voltage
PNP MJL1302A
20
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
0.8 A
20
IB = 1 A
0.4 A
0.2 A
12
IC, COLLECTOR CURRENT (AMPS)
0.6 A
IB = 1 A
16
0.8 A
NPN MJL3281A
0.6 A
0.4 A
0.2 A
12
16
8
8
4
0
4
TJ = 25°C
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Typical Output Characteristics
Figure 10. Typical Output Characteristics
100
IC, COLLECTOR CURRENT (AMPS)
10
1
250 ms
1s
0.1
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 200°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
1
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. Forward Bias Safe Operating Area (FBSOA)
4
Motorola Bipolar Power Transistor Device Data
MJL3281A
PACKAGE DIMENSIONS
0.25 (0.010)
–B–
–Q–
M
T B
M
–T–
C
U
N
A
R
–Y–
P
K
1
2
3
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
MAX
2.8
2.9
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.0
11.4
3.95
4.75
2.2
2.6
3.1
3.5
2.15
2.35
6.1
6.5
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.433
0.449
0.156
0.187
0.087
0.102
0.122
0.137
0.085
0.093
0.240
0.256
0.110
0.125
L
F
2 PL
G
W
D
3 PL
0.25 (0.010)
M
J
H
Y Q
S
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 340G–02
TO–264
ISSUE E
Motorola Bipolar Power Transistor Device Data
5
PCB设计
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