Use of E-mode FET technology delivers high efficiency
and high linearity with a single positive low voltage
supply.
APPLICATIONS
• 1800 MHz DCS/PCS
• 915 AND 2450 ISM BAND USAGE
• AUTOMATIC METER READERS
• WIRELESS SECURITY
• SATELLITE UPLINK
ORDERING INFORMATION
PART NUMBER
UPG2118K-E3-A
MARKING
2118
PACKAGE
20-pin QFN
SUPPLYING FORM
• Embossed tape 12mm wide
• 4.5 K pcs/reel
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
PARAMETERS
Storage Temperature
Operating Temperature
Supply Voltage1,2,3
Active Bias Circuit Voltage
Reference Voltage
Junction Temperature
Input Power
Total Power Dissipation
SYMBOL
T
stg
T
opt
V
D
1,2,3
V
ABC
V
ref
T
j
P
in
P
tot
RATINGS
−45
to +85
−45
to +85
8.0
8.0
5.0
150
15
4.0
UNIT
°C
°C
V
V
V
°C
dBm
W
Caution
This device is ESD sensitive. Please take ESD precautions.
The information contained in this document is being issued in advance of the production cycle for the device.
The parameters for the device may change before final production or NEC Corporation, at its own discretion,
may withdraw the device prior to its production.
California Eastern Laboratories
UPG2118K
PIN CONNECTIONS
PIN NO.
1
2
3
4
5
6
7
8
9
10
CONNECTION
V
G
1,2
V
ref
1,2
V
ABC
V
ref
3
V
G
3
GND
V
D
3/RF OUT
V
D
3/RF OUT
V
D
3/RF OUT
V
D
3/RF OUT
PIN NO.
11
12
13
14
15
16
17
18
19
20
CONNECTION
GND
NC
NC
GND
V
D
2
V
D
1
GND
GND
V
attn
RF IN
(Top View)
RECOMMENDED OPERATING CONDITIONS
(T
A
= 25°C)
PARAMETERS
Supply Voltage
Reference Voltage
Active Bias Circuit Voltage
Input Power
SYMBOL
V
D
1,2,3
V
ref
V
ABC
P
in
MIN
+2.8
+0.04
0
5
TYP
+3.2
-
2.6
-
MAX
+5.5
+1.8
5.5
10
UNIT
V
V
V
dBm
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Active Bias Circuit Current
Reference Current
RF Leakage Current
Output Power
Power Added Efficiency
Power Control Slope
Minimum Output Power
SYMBOL
I
ABC
I
ref
I
leak
P
out
PAE
P
slope
M
Pout
(Unless otherwise specified, TA=+25°C,f=1880MHz,V
D
=+3.2V,V
ABC
=+2.6V,V
ref
=V
attn
=1.8V, P
in
=+5dBm)
TEST CONDITIONS
P
out
=+31.5dBm,V
ABC
=Arbitrary
V
ref
=V
attn
=0.04 to 1.8V
V
ref
=V
attn
=0.04 V
V
ABC
=10K ohm+Load
MIN
-
-
-
+31.5
42.0
V
ref
=V
attn
=0.04 V to 1.8V
ΔV
ref
=0.01V
V
ref
=V
attn
=0.04 V
-
-
TYP
-
-
-
-
-
-
-
MAX
30
10
50
-
-
50:1
-20
UNIT
mA
mA
mA
dBm
%
Vrms/
Vref
dBc
UPG2118K
TEST CIRCUIT
NC
(VG1,2
VG3) These pins must be connected to ground via a 1000pF capacitor for stability.
PACKAGE DIMENSIONS (
UNIT: mm)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
02/08/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Lead (Pb)
Mercury
Cadmium
Hexavalent Chromium
PBB
PBDE
Concentration Limit per RoHS
(values are not yet fixed)
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Concentration contained
in CEL devices
-A
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
