SF5G49,SF5J49,USF5G49,USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
Medium Power Control Applications
·
·
·
Repetitive peak off-state voltage: V
DRM
= 400, 600 V
Repetitive peak reverse voltage: V
RRM
= 400, 600 V
Average on-state current: I
T (AV)
= 5 A
Gate trigger current: I
GT
= 70 µA max
Unit: mm
Maximum Ratings
Characteristics
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(R
GK
=
330
W)
Non-repetitive peak
reverse voltage
(non-repetitive
<
5 ms,
T
j
=
0~125°C,
R
GK
=
330
W)
Average on-state current
R.M.S on-state current
Peak one cycle surge on-state current
(non-repetitive)
I
2
t limit value
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
SF5G49
USF5G49
SF5J49
USF5J49
SF5G49
USF5G49
SF5J49
USF5J49
Symbol
Rating
400
V
600
500
V
RSM
720
I
T (AV)
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
5
7.8
65 (50 Hz)
20
0.5
0.05
5
-5
200
-40~125
-40~125
A
A
A
A
2
s
W
W
V
V
mA
°C
°C
V
Unit
V
DRM
V
RRM
JEDEC
JEITA
TOSHIBA
―
―
13-7F1A
Weight: 0.36 g (typ.)
Note: Should be used with gate resistance as follows:
Anode
Gate
R
GK
<
330
W
=
Cathode
JEDEC
JEITA
TOSHIBA
―
―
13-F2A
Weight: 0.28 g (typ.)
1
2002-02-05
SF5G49,SF5J49,USF5G49,USF5J49
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Repetitive peak off-state current
and Repetitive peak reverse current
Peak on-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Critical rate of rise of off-state voltage
Holding current
Thermal resistance (junction to case)
Symbol
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
dv/dt
I
H
R
th (j-c)
Test Condition
V
DRM
=
V
RRM
=
Rated
R
GK
=
330
W
I
TM
=
12 A
V
D
=
6 V, R
L
=
100
W
R
GK
=
330
W
V
D
=
Rated
´
2/3, Tc
=
125°C
V
DRM
=
Rated
´
2/3, Tc
=
75°C
R
GK
=
330
W,
Exponential rise
R
L
=
100
W,
R
GK
=
330
W
DC
Min
¾
¾
¾
3
0.2
¾
¾
¾
Typ.
¾
¾
¾
¾
¾
50
2.5
¾
Max
20
1.6
0.8
70
¾
¾
¾
6.0
Unit
mA
V
V
mA
V
V/ms
mA
°C/W
Marking
※1
※2
※1
Mark
Lot Number
F5G49
F5J49
Type Name
SF5G49, USF5G49
SF5J49, USF5J49
※2
Month (starting from alphabet A)
Year (last decimal digit of the current year)
Transient thermal impedance
(junction to case)
Transient thermal impedance
r
th (j-c)
(°C/W)
10
1
0.1
0.001
0.01
0.1
1
10
Time t (s)
2
2002-02-05
SF5G49,SF5J49,USF5G49,USF5J49
Surge on-state current
(non-repetitive)
80
i
T
– v
T
100
(A)
Instantaneous on-state current i
T
I
TSM
(A)
Rated load
60
60 Hz
40
Peak surge on-state current
10
50
1
Tj
=
125°C
25°C
20
0.1
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
0
1
10
100
Instantaneous on-state voltage
v
T
(V)
Number of cycles at 50 Hz and 60 Hz
I
GT
(Tc)/I
GT
(Tc
=
25°C) – Tc
10
VD
=
6 V
(typ.)
2.0
V
GT
(Tc)/V
GT
(Tc
=
25°C) – Tc
VD
=
6 V
(typ.)
RL
=
100
W
RL
=
100
W
V
GT
(Tc)/V
GT
(Tc
=
25°C)
RGK
=
330
W
I
GT
(Tc)/I
GT
(Tc
=
25°C)
1.5
RGK
=
330
W
1
1.0
0.5
0.1
-50
0
50
100
150
0
-50
0
50
100
150
Case temperature Tc
(°C)
Case temperature Tc
(°C)
I
H
(Tc)/I
H
(Tc
=
25°C) – Tc
2.0
(typ.)
VD
=
6 V
ITM
=
1 A
RGK
=
330
W
I
H
(Tc)/I
H
(Tc
=
25°C)
1.5
I
H
– R
GK
10
1.0
(typ.)
ITM
=
1 A
Holding current
I
H
(mA)
Ta
=
25°C
1
0.5
0
-60
-20
20
60
100
140
0.1
0.01
0.1
1
10
100
Case temperature Tc
(°C)
Gate to cathode resistance
R
GK
(kW)
3
2002-02-05
SF5G49,SF5J49,USF5G49,USF5J49
P
T (AV)
– I
T (AV)
10
Half sine waveform
140
Tc Max – I
T (AV)
Half sine waveform
Maximum allowable case temperature
Tc Max (°C)
Average on-state power dissipation
P
T (AV)
(W)
8
0°
6
a =
30°
4
a
180°
90°
60°
120°
Conduction angle
180°
120
100
80
60
40
20
0
0
0°
a
180°
Conduction angle
2
a =
30°
60°
90°
120°
180°
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
Average on-state current
I
T (AV)
(A)
Average on-state current
I
T (AV)
(A)
P
T (AV)
– I
T (AV)
16
140
14
12
360°
10
8
6
4
2
0
0
a =
60°
0° 180°
a1
a2
360°
180°
120°
Full sine waveform
240°
Tc Max – I
T (AV)
Full sine waveform
Maximum allowable case temperature
Tc Max (°C)
Average on-state power dissipation
P
T (AV)
(W)
120
0° 180°
100
80
60
40
20
0
0
360°
a1
a2
Conduction angle
a = a1 + a2
Conduction angle
a = a1 + a2
2
4
6
8
10
a =
60°
2
120° 180°
240°
360°
4
6
8
10
Average on-state current
I
T (AV)
(A)
Average on-state current
I
T (AV)
(A)
P
T (AV)
– I
T (AV)
16
Rectangular waveform
140
14
12
10
8
90°
6
a =
30°
4
2
0
0
60°
0°
a
360°
DC
Tc Max – I
T (AV)
Rectangular waveform
Maximum allowable case temperature
Tc Max (°C)
Average on-state power dissipation
P
T (AV)
(W)
120
100
80
60
40
20
0
0
60°
a =
30°
2
90°
120°
180°
DC
0°
a
360°
Conduction angle
180°
120°
Conduction angle
2
4
6
8
10
4
6
8
10
Average on-state current
I
T (AV)
(A)
Average on-state current
I
T (AV)
(A)
4
2002-02-05
SF5G49,SF5J49,USF5G49,USF5J49
10
4
dv/dt – C
GK
(typ.)
10
4
dv/dt – C
GK
(typ.)
10
3
RGK
=
100
W
10
3
RGK
=
100
W
Critical rate of rise of off-state voltage
dv/dt (V/ms)
10
2
330
W
Critical rate of rise of off-state voltage
dv/dt (V/ms)
10
2
330
W
10
1
1 kW
10
1
1 kW
0
3.3 kW
VD
=
400 V
Ta
=
100°C
CGK
1
10
- -
3
10
RGK
10
-
2
10
-
1
10
0
10
0
3.3 kW
10
VD
=
400 V
Ta
=
75°C
CGK
1
10
- -
3
10
RGK
10
-
2
10
-
1
10
0
Gate to cathode capacitance C
GK
(mF)
Gate to cathode capacitance C
GK
(mF)
V
BO
(Tc)/V
BO
(Tc
=
25°C) – Tc
120
(typ.)
(%)
100
RGK
=
100
W
V
BO
(Tc)/V
BO
(Tc
=
25°C)
80
330
W
1 kW
60
3.3 kW
40
10 kW
20
0
-80
-40
0
40
80
120
160
200
Case temperature Tc
(°C)
5
2002-02-05
嵌入式系统
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