BGU7031
1 GHz wideband low-noise amplifier
Rev. 2 — 7 September 2010
Product data sheet
1. Product profile
1.1 General description
The BGU7031 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity, low-noise applications over a frequency range of 40 MHz to
1 GHz. It is especially suited to Set-Top Box applications.
The LNA is housed in a 6-pin SOT363 plastic SMD package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Internally biased
Flat gain between 40 MHz and 1 GHz
Noise figure of 4.5 dB
High linearity with an IP3
O
of 29 dBm
75
Ω
input and output impedance
ESD protection > 2 kV Human Body Model (HBM) on all pins
1.3 Applications
Terrestrial and cable Set-Top Boxes (STB)
Silicon and “Can” tuners
Personal and Digital Video Recorders (PVR and DVR)
Home networking and in-house signal distribution
NXP Semiconductors
BGU7031
1 GHz wideband low-noise amplifier
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C; typical values at V
CC
= 5 V; Z
S
= Z
L
= 75
Ω
; R
bias
= 43
Ω
; 40 MHz
≤
f
1
≤
1000 MHz.
Symbol Parameter
V
CC
I
CC(tot)
T
amb
NF
P
L(1dB)
IP3
O
[1]
[2]
Conditions
RF input AC coupled
[1]
Min
-
−10
-
Typ Max Unit
5.25 V
-
-
-
-
mA
°C
dB
dBm
dBm
43
4.5
13
29
supply voltage
total supply current
ambient temperature
noise figure
output power at 1 dB gain
compression
output third-order intercept point
4.75 5.0
+25 +70
1 GHz
[2]
-
-
I
CC(tot)
is configurable with external resistor.
The fundamental frequency (f
1
) lies between 40 MHz and 1000 MHz. The intermodulation product (IM3) is
2
×
f
2
−
f
1
, where f
2
= f
1
±
1 MHz. Input power P
i
=
−10
dBm.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
RF_OUT
V
CC
n.c.
n.c.
GND
RF_IN
1
2
3
5
4
sym141
Simplified outline
6
5
4
Graphic symbol
3
2
6
1
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU7031
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BGU7031
Marking codes
Marking code
SC%
Type number
Note: % character indicates the location of production.
BGU7031
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2010
2 of 10
NXP Semiconductors
BGU7031
1 GHz wideband low-noise amplifier
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
I
CC(tot)
P
tot
P
i
T
stg
T
j
T
amb
V
ESD
Parameter
supply voltage
total supply current
total power dissipation
input power
storage temperature
junction temperature
ambient temperature
electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E
Conditions
RF input AC coupled
configurable with external resistor
T
sp
≤
100
°C
single tone
[1]
Min Max
−0.6
5.25
-
-
-
−65
-
−10
2
60
250
10
+150
150
+70
-
Unit
V
mA
mW
dBm
°C
°C
°C
kV
[1]
T
sp
is the temperature at the solder point of the ground lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
240
Unit
K/W
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C; typical values at V
CC
= 5 V; Z
S
= Z
L
= 75
Ω
; R
bias
= 43
Ω
; 40 MHz
≤
f
1
≤
1000 MHz.
Symbol Parameter
V
CC
I
CC(tot)
|s
21
|
2
SL
sl
FL
NF
RL
in
RL
out
P
L(1dB)
IP3
O
[1]
Conditions
RF input AC coupled
Min
-
-
-
-
-
-
-
Typ
43
10
−1
4.5
18
12
14
29
Max Unit
5.25 V
-
-
-
-
-
-
-
mA
dB
dB
dB
dB
dB
dB
dBm
dBm
supply voltage
total supply current
insertion power gain
slope straight line
flatness of frequency response
noise figure
input return loss
output return loss
output power at 1 dB gain
compression
output third-order intercept point
4.75 5.0
−0.2
-
1 GHz
[1]
-
-
The fundamental frequency (f
1
) lies between 40 MHz and 1000 MHz. The intermodulation product (IM3) is
2
×
f
2
−
f
1
, where f
2
= f
1
±
1 MHz. Input power P
i
=
−10
dBm.
BGU7031
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2010
3 of 10
NXP Semiconductors
BGU7031
1 GHz wideband low-noise amplifier
8. Application information
Other applications are possible. Please contact your local sales representative for more
information. Application notes are available on the NXP website.
8.1 Application circuit
V
CC
C4
C3
n.c.
3
X1
C1
R1 = Rbias
2
6
4
5
n.c.
1
L1
C2
X2
RF_IN
RF_OUT
001aam382
Components are listed in
Table 8.
Fig 1.
BGU7031 application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
8.2 Application circuit board layout
GND
GND
GND
VCC
C4
X1
X2
C3
RF_IN
C1
L1
R1
C2
RF_OUT
001aam385
PCB material = FR4.
PCB thickness = 1.6 mm.
PCB size = 30 mm
×
30 mm.
ε
r
= 4.5; thickness of copper layer = 35
μm.
Components are listed in
Table 8.
Fig 2.
BGU7031 application circuit board layout
BGU7031
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2010
4 of 10
NXP Semiconductors
BGU7031
1 GHz wideband low-noise amplifier
Table 8.
List of components
See
Figure 1
and
Figure 2.
Component
C1, C2
C3
C4
L1
R1
X1, X2
[1]
Description
capacitor
capacitor
capacitor
resistor
connector
Value
10 nF
10 nF
10
μF
[1]
[1]
Remarks
Function
DC blocking
decoupling
decoupling
chip ferrite bead 1.5 kΩ
43
Ω
75
Ω
Murata BLM18HE152SN1DF
R
bias
RF choke
bias setting
F-connector, edge mount PCB
input/output
reflow type, Bomar 861V509ERG
L1 and R1 must have a power rating of 0.1 W or higher.
BGU7031
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2010
5 of 10
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