(TC = 25°C unless otherwise noted; both directions)
Characteristic
Breakover Voltage
MKP1V120
MKP1V130
Repetitive Peak Off-State Current
(60 Hz Sine Wave, VD = Rated VDRM)
Forward “On” Voltage
(ITM = 1 A)
Dynamic Holding Current
Switching Resistance
Breakover Current
Maximum Rate-of-Change of On-State Current
T L , MAXIMUM ALLOWABLE LEAD TEMPERATURE (
°
C)
MKP1V120, 130,
IDRM
TJ = 125°C
VTM
IH
RS
IBO
di/dt
Symbol
VBO
110
120
—
—
—
—
0.1
—
—
—
—
—
—
1.3
—
—
—
90
130
140
5
50
1.5
100
—
200
—
µA
Volts
mA
kΩ
µA
A/µs
Min
Typ
Max
Unit
Volts
140
130
120
110
100
90
80
70
60
50
40
0
0.2
0.4 0.6
0.8
1.0 1.2
1.4
1.6
IT(RMS) ON-STATE CURRENT (AMPS)
1.8
2.0
TJ = 125°C
Sine Wave
Conduction Angle = 180°
3
″
8
3
″
8
1.0
TL
I T(RMS), ON-STATE CURRENT (AMPS)
TJ = 125°C
Sine Wave
Conduction Angle = 180°
Assembled in PCB
Lead Length =
3 8
″
0.8
0.6
0.4
0.2
0
20
40
60
80
100
120
TA, MAXIMUM AMBIENT TEMPERATURE (°C)
140
Figure 1. Maximum Lead Temperature
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Figure 2. Maximum Ambient Temperature
PRMS , POWER DISSIPATION (WATTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
5.0
TJ = 25°C
125°C
1.25
1.00
TJ = 25°C
Conduction Angle = 180°C
0.75
0.50
0.25
0
0.2
0.4
0.6
0.8
IT(RMS), ON-STATE CURRENT (AMPS)
1.0
Figure 3. Typical On-State Voltage
Figure 4. Power Dissipation
2
Motorola Thyristor Device Data
MKP1V120 MKP1V130
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
Z
θJL
(t) = R
θJL •
r(t)
∆T
JL = Ppk R
θJL
[r(t)]
tp
where:
TIME
∆T
JL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance
at time, t from this figure. For example,
r(tp) = normalized value of
transient resistance at time tp.
The temperature of the lead should be measured
using a thermocouple placed on the lead as close as
possible to the tie point. The thermal mass connected
to the tie point is normally large enough so that it will
not significantly respond to heat surges generated in
the diode as a result of pulsed operation once steady-
state conditions are achieved. Using the measured
value of T L, the junction temperature may be deter-
mined by:
TJ = TL +
∆T
JL
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
VBO, BREAKOVER VOLTAGE (NORMALIZED)
1.4
1.0
I H , HOLDING CURRENT (NORMALIZED)
–40
–20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120 140
1.2
1.0
0.9
0.8
0.6
0.4
–60
0.8
–60
–40
–20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120
140
Figure 6. Breakover Voltage
Figure 7. Holding Current
100
IPK , PEAK CURRENT (AMPS)
ITM
IH
VTM
Slope = RS
IS
IPK
IDRM
VS
I(BO)
V(BO)
10
VDRM
10%
tw
1.0
0.1
1.0
tw, PULSE WIDTH (ms)
10
100
RS
+
(
(
IS
*
I(BO)
)
V (BO)
*
VS
)
Figure 8. Pulse Rating Curve
Figure 9. V-I Characteristics
Motorola Thyristor Device Data
3
MKP1V120 MKP1V130
PACKAGE DIMENSIONS
B
NOTES:
1. POLARITY DENOTED BY CATHODE BAND.
2. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
D
DIM
A
B
D
K
A
MILLIMETERS
MIN
MAX
5.97
6.60
2.79
3.05
0.76
0.86
27.94
–––
INCHES
MIN
MAX
0.235
0.260
0.110
0.120
0.030
0.034
1.100
–––
K
CASE 59–04
(DO–41)
ISSUE M
DATE 09/25/84
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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