BGA2800
MMIC wideband amplifier
Rev. 5 — 13 July 2015
Product data sheet
1. Product profile
1.1 General description
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz
Output power at 1 dB gain compression =
1
dBm
Supply current = 10.5 mA at a supply voltage of 3.3 V
Reverse isolation > 30 dB up to 2 GHz
Good linearity with low second order and third order products
Noise figure = 4 dB at 950 MHz
Unconditionally stable (K > 1)
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
V
CC
GND2
RF_OUT
GND1
RF_IN
Simplified outline
Graphic symbol
NXP Semiconductors
BGA2800
MMIC wideband amplifier
3. Ordering information
Table 2.
Ordering information
Package
Name
BGA2800
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 3.
BGA2800
Marking
Marking code
*E7
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
I
CC
P
tot
T
stg
T
j
P
drive
Parameter
supply voltage
supply current
total power dissipation
storage temperature
junction temperature
drive power
T
sp
= 90
C
Conditions
RF input AC coupled
Min
0.5
-
-
40
-
-
Max
+5.0
55
200
+125
125
+10
Unit
V
mA
mW
C
C
dBm
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
Conditions
Typ
300
Unit
K/W
thermal resistance from junction to P
tot
= 200 mW; T
sp
= 90
C
solder point
7. Characteristics
Table 6.
Characteristics
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
V
CC
I
CC
supply voltage
supply current
Conditions
Min
3.0
8.8
Typ
3.3
10.5
Max
3.6
12.1
Unit
V
mA
BGA2800
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
2 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
Table 6.
Characteristics
…continued
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
G
p
power gain
Conditions
f = 250 MHz
f = 950 MHz
f = 2150 MHz
RL
in
input return loss
f = 250 MHz
f = 950 MHz
f = 2150 MHz
RL
out
output return loss
f = 250 MHz
f = 950 MHz
f = 2150 MHz
ISL
isolation
f = 250 MHz
f = 950 MHz
f = 2150 MHz
NF
noise figure
f = 250 MHz
f = 950 MHz
f = 2150 MHz
B
3dB
K
3
dB bandwidth
Rollett stability factor
3 dB below gain at 1 GHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
P
L(sat)
saturated output power
f = 250 MHz
f = 950 MHz
f = 2150 MHz
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz
f = 950 MHz
f = 2150 MHz
IP3
I
input third-order intercept point
P
drive
=
36
dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz
f
1
= 950 MHz; f
2
= 951 MHz
f
1
= 2150 MHz; f
2
= 2151 MHz
IP3
O
output third-order intercept point
P
drive
=
36
dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz
f
1
= 950 MHz; f
2
= 951 MHz
f
1
= 2150 MHz; f
2
= 2151 MHz
P
L(2H)
second harmonic output power
P
drive
=
34
dBm
f
1H
= 250 MHz; f
2H
= 500 MHz
f
1H
= 950 MHz; f
2H
= 1900 MHz
IM2
second-order intermodulation distance
P
drive
=
36
dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz
f
1
= 950 MHz; f
2
= 951 MHz
42
44
53
55
64
67
dBc
dBc
62
51
60
49
58
48
dBm
dBm
9
9
5
11
11
8
13
13
11
dBm
dBm
dBm
11
12
15
9
10
12
7
7
9
dBm
dBm
dBm
Min
19.4
19.8
18.7
19
19
10
15
16
15
46
44
35
3.2
3.1
3.3
2.9
49
8
2.8
1
0
2
2
2
3
Typ
19.9
20.5
20.2
21
21
15
19
17
17
67
46
37
3.7
3.6
3.7
3.2
105
9
3.4
1
1
0
1
1
2
Max
20.5
21.2
21.7
23
23
22
24
18
20
87
47
40
4.2
4.0
4.2
3.5
160
10
4.0
2
3
+1
0
0
1
dBm
dBm
dBm
dBm
dBm
dBm
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
BGA2800
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
3 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
8. Application information
Figure 1
shows a typical application circuit for the BGA2800 MMIC. The device is
internally matched to 50
,
and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes
as close as possible to the MMIC.
Fig 1.
Typical application circuit
8.1 Application examples
The MMIC is very suitable as IF amplifier in e.g. LNB’s.
The excellent wideband characteristics make it an easy
building block.
As second amplifier after an LNA, the MMIC offers an
easy matching, low noise solution.
Fig 2.
Application as IF amplifier
Fig 3.
Application as RF amplifier
BGA2800
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
4 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
8.2 Graphs
T
amb
= 25
C;
I
CC
= 10.5 mA; V
CC
= 3.3 V; Z
0
= 50
.
(1) f = 250 MHz
(2) f = 950 MHz
(3) f = 2150 MHz
Fig 4.
Input reflection coefficient (S
11
); typical values
BGA2800
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
5 of 18
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