RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
参数名称 | 属性值 |
产品种类 Product Category | RF Development Tools |
制造商 Manufacturer | Cree(科瑞) |
RoHS | No |
产品 Product | Demonstration Boards |
类型 Type | RF Transistors |
工具用于评估 Tool Is For Evaluation Of | CGH40025F |
频率 Frequency | 6 GHz |
工作电源电压 Operating Supply Voltage | 28 V |
系列 Packaging | Bulk |
Description/Function | Demonstration board for CGH4425F |
用于 For Use With | CGH40025F |
最大工作温度 Maximum Operating Temperature | + 150 C |
最小工作温度 Minimum Operating Temperature | - 40 C |
工厂包装数量 Factory Pack Quantity | 2 |
CGH40025F-TB | CGH40025F | |
---|---|---|
描述 | RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt | RF JFET Transistors GaN HEMT DC-6.0GHz, 10 Watt |
产品种类 Product Category |
RF Development Tools | RF JFET Transistors |
制造商 Manufacturer |
Cree(科瑞) | Cree(科瑞) |
RoHS | No | Details |
产品 Product |
Demonstration Boards | GaN HEMT |
系列 Packaging |
Bulk | Tube |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C |
最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C |
工厂包装数量 Factory Pack Quantity |
2 | 250 |
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