A Business Partner of Renesas Electronics Corporation.

Preliminary

CMOS Integrated Circuits High Power SP4T Switch

DESCRIPTION

PD5904T7K

R09DS0045EJ0200

Rev.2.00

Dec 11, 2012

Data Sheet

This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.

This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.

•

Low control voltage

Low insertion loss

APPLICATIONS

•

GSM and UMTS/LTE main Antenna switching

Diversity Antenna switching

Antenna tuning Application

ORDERING INFORMATION

Part Number

PD5904T7K-E2

DI

SC

CAUTION

Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this

device. This device must be protected at all times from ESD. Static charges may easily produce potentials of

several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard

ESD precautions must be employed at all times.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0045EJ0200 Rev.2.00

Dec 11, 2012

O

Embossed tape 8 mm wide

Pin 10, 11 and 12 face the perforation side

of the tape

•

Qty 3 kpcs/reel

Remark

To order evaluation samples, please contact your nearby sales office.

Part number for sample order: PD5904T7K-A

Order Number

PD5904T7K-E2-A

NT

12-pin plastic

QFN

(T7K) (Pb-Free)

Package

Marking

5904

IN

•

: V

cont

= 1.3 V MIN.,V

DD

= 2.3 V MIN.

: L

ins

= 0.4 dB TYP. @ f = 1 GHz

: L

ins

= 0.5 dB TYP. @ f = 2 GHz

High isolation

: ISL = 35 dB TYP. @ f = 1 GHz

: ISL = 30 dB TYP. @ f = 2 GHz

High Handling power

: P

in (0.1dB)

= +38 dBm TYP. @f = 0.9/2 GHz

High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0

×

2.0

×

0.6 mm)

No DC blocking capacitors required.

UE

Supplying Form

Page 1 of 14

FEATURES

D

The PD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna

switching and other High Power RF switching applications up to

+35

dBm.

A Business Partner of Renesas Electronics Corporation.

μ

PD5904T7K

<R>

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM

(Top View)

GND

12

1

2

3

11

10

9

8

7

RF4

1

RF3

2

GND

3

(Top View)

GND

RFC

12

11

10

RF1

9

RF2

8

GND

7

(Bottom View)

10

11

12

Pin No.

1

2

3

4

5

6

7

8

9

10

11

12

13

Pin Name

RF4

RF3

GND

V

DD

V

cont

1

V

cont

2

GND

RF2

RF1

GND

RFC

GND

7

3

V

cont

1

V

DD

4

5

6

V

cont

2

4

5

6

5

4

BLOCK DIAGRAM

RFC

RF1

RF2

RF3

RF4

V

DD

V

cont

1

V

cont

2

SW TRUTH TABLE

V

cont

1

High

Low

V

cont

2

High

Low

High

Low

NT

RFC−RF1

ON

OFF

RFC−RF2

OFF

ON

OFF

Symbol

V

DD

V

cont

P

in

T

A

T

stg

Ratings

3.6

+38

−40

to +85

−55

to +125

Symbol

f

V

DD

V

cont (H)

V

cont (L)

Note

ABSOLUTE MAXIMUM RATINGS (T

A

= +25°C, unless otherwise specified)

Parameter

Supply Voltage

Control Voltage

Input Power

Operating Ambient Temperature

Storage Temperature

Unit

V

dBm

°C

DI

RECOMMENDED OPERATING RANGE (T

A

= +25°C, unless otherwise specified)

Parameter

Operating Frequency

MIN.

0.05

2.3

1.3

0

TYP.

−

MAX.

6.0

3.3

V

DD

0.4

Unit

GHz

V

Supply Voltage

Control Voltage (High)

Control Voltage (Low)

V

cont

≤

V

DD

Note:

R09DS0045EJ0200 Rev.2.00

Dec 11, 2012

SC

O

IN

RFC−RF3

OFF

ON

OFF

RFC−RF4

OFF

ON

Page 2 of 14

UE

D

5904

9

8

13

1

2

A Business Partner of Renesas Electronics Corporation.

μ

PD5904T7K

ELECTRICAL CHARACTERISTICS

(T

A

= +25°C, V

DD

= 2.5 V, V

cont (H)

= 1.8 V, V

cont (L)

= 0 V, Z

O

= 50

Ω,

unless otherwise

specified)

Parameter

Insertion Loss

Symbol

L

ins

1

L

ins

2

L

ins

3

L

ins

4

L

ins

5

L

ins

6

ISL1

ISL2

ISL3

ISL4

ISL5

ISL6

RL

(C)

1

RL

(C)

2

RL

(RF)

1

RL

(RF)

2

P

in (0.1 dB)

1

P

in (0.1 dB)

2

2f0 (L)

3f0 (L)

2f0 (H)

3f0 (H)

IMD2(L)

IMD2(H)

IMD3(L)

RFC

−

RF1, 2, 3, 4

RFC

−

RF1, 2, 3, 4

RFC

−

RF1, 2, 3, 4

Path

RFC

−

RF1, 2, 3, 4

Test Conditions

f = 0.05 to 0.5 GHz

f = 0.5 to 1.0 GHz

f = 1.0 to 2.0 GHz

f = 2.0 to 2.7 GHz

f = 2.7 to 3.8 GHz

f = 3.8 to 6.0 GHz

f = 0.05 to 0.5 GHz

f = 0.5 to 1.0 GHz

f = 1.0 to 2.0 GHz

f = 2.0 to 2.7 GHz

f = 2.7 to 3.8 GHz

MIN.

−

30

25

20

15

TYP.

0.35

0.40

0.50

0.55

0.60

0.75

40

35

30

25

20

25

17

25

17

MAX.

0.50

0.55

0.65

0.75

0.80

0.95

−

−93

−100

−105

dBc

75

80

−

dBc

Unit

dB

Isolation

RFC

−

RF1, 2, 3, 4

Return Loss

(RFC)

Return Loss

(RF1,2,3,4)

0.1 dB Loss

Compression

Input Power

RFC

−

RF1, 2, 3, 4

f = 3.8 to 6.0 GHz

f = 0.05 to 3.8 GHz

f = 3.8 to 6.0 GHz

f = 0.05 to 3.8 GHz

f = 3.8 to 6.0 GHz

f = 0.9 GHz

f = 2.0 GHz

UE

10

15

10

15

10

+36.0

+38.0

Note

RFC

−

RF1, 2, 3, 4

IN

−

+36.0

75

70

75

70

NT

f = 2.0 GHz,

P

in

= +33 dBm CW

RFC

−

RF1, 2, 3, 4

RFC

−

RF1, 2, 3, 4

RFC

−

RF1, 2, 3, 4

Harmonics

f = 0.9 GHz,

P

in

= +35 dBm CW

2nd Order Inter

Modulation

Distortion

f = 835 MHz, P

in

= +20 dBm

f = 45 MHz, P

in

= –15 dBm

f = 1 950 MHz, P

in

= +20 dBm

f = 190MHz, P

in

= –15 dBm

O

3rd Order Inter

Modulation

Distortion

f = 835 MHz, P

in

= +20 dBm

f = 790 MHz, P

in

= –15 dBm

f = 1 950 MHz, P

in

= +20 dBm

f = 1 760 MHz, P

in

= –15 dBm

IMD3(H)

SC

TBR(L)

Triple Beat Ratio

f = 836±0.5 MHz,

P

in

= +21.5 dBm

f = 881.5 MHz, P

in

= –30 dBm

f = 1 880.5±0.5 MHz,

P

in

= +21.5 dBm

f = 1 960 MHz, P

in

= –30 dBm

f = 836.6 MHz, P

in

= +24 dBm

f = 1718 MHz, P

in

= –20 dBm

f = 1 885 MHz, P

in

= +24 dBm

f = 3 850 MHz, P

in

= –20 dBm

TBR(H)

75

DI

Input 2nd order

Intercept Point

IIP

2(Cel)

105

IIP

2(PCS)

Note:

Absolute Maximum Ratings

R09DS0045EJ0200 Rev.2.00

Dec 11, 2012

D

dB

dBm

dBc

+38.0

Note

80

75

85

80

−98

−105

−110

80

−

dBm

110

Page 3 of 14

A Business Partner of Renesas Electronics Corporation.

μ

PD5904T7K

ELECTRICAL CHARACTERISTICS

(T

A

= +25°C, V

DD

= 2.5 V, V

cont (H)

= 1.8 V, V

cont (L)

= 0 V, Z

O

= 50

Ω,

unless otherwise

specified)

Parameter

Switch Control Speed

Supply Current

Control Current 1

I

cont

1(L)

I

cont

2(H)

Control Current 2

I

cont

2(L)

Symbol

t

sw

I

DD

I

cont

1(H)

Path

Test Conditions

MIN.

−

TYP.

1.5

130

−

MAX.

3

250

1

RFC

−

50% CTL to 90/10%

RF1, 2, 3, 4

−

No RF

−

V

cont

1: High No RF

V

cont

1: Low No RF

V

cont

2: High No RF

V

cont

2: Low No RF

Unit

μ

s

μ

A

DI

R09DS0045EJ0200 Rev.2.00

Dec 11, 2012

SC

O

Page 4 of 14

NT

IN

UE

D

A Business Partner of Renesas Electronics Corporation.

μ

PD5904T7K

<R>

EVALUATION CIRCUIT

RFC

GND

RF4

1

9

2

13

GND

3

GND

4

5

V

DD

1 000 pF

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

APPLICATION INFORMATION

O

L

ESD

•

L

ESD

provides a means to increase the ESD protection on a specific RF port, typically the port attached to the

antenna.

DI

R09DS0045EJ0200 Rev.2.00

Dec 11, 2012

SC

NT

Switch

IN

V

cont

1

1 000 pF

V

cont

2

1 000 pF

UE

8

7

GND

6

RF3

D

RF1

RF2

12

11

10

Page 5 of 14

参数名称	属性值
产品种类 Product Category	RF Development Tools
制造商 Manufacturer	CEL
RoHS	Details
产品 Product	Evaluation Boards
类型 Type	RF Switches
工具用于评估 Tool Is For Evaluation Of	uPD5904T7K
频率 Frequency	50 MHz to 6 GHz
工作电源电压 Operating Supply Voltage	2.3 V to 3.3 V
系列 Packaging	Bulk
工厂包装数量 Factory Pack Quantity	1

uPD5904T7K-Eval-A

uPD5904T7K-Eval-A在线购买

uPD5904T7K-Eval-A概述

uPD5904T7K-Eval-A规格参数

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