DATA SHEET
GaAs HBT INTEGRATED CIRCUIT
μ
PG2318T5N
DESCRIPTION
The
μ
PG2318T5N is a GaAs HBT MMIC power amplifier for 2.4 GHz band wireless LAN.
for high-density surface mounting.
FEATURES
• Operating frequency
• Supply voltage
• Circuit current
• Power gain
• Gain flatness
• Error vector magnitude
• Harmonics
• Control voltage
: f
opt
= 2 400 to 2 500 MHz (2 450 MHz TYP.)
: V
CC
1, 2 = 3.0 to 4.6 V (3.3 V TYP.)
: V
enable
= 0 to 3.0 V (2.8 V TYP.)
: I
CC
= 120 mA TYP. @ V
CC
1, 2 = 3.3 V, V
enable
= 2.8 V,
SC
O
APPLICATIONS
• Power Amplifier for 802.11b/g
• 2.4 GHz ISM Band Transceivers
• High-density surface mounting : 6-pin plastic TSON package (1.5
×
1.5
×
0.37 mm)
ORDERING INFORMATION
Part Number
Order Number
NT
Package
Marking
G5G
(Pb-Free)
6-pin plastic TSON
: G
P
= 28 dB TYP. @ V
CC
1, 2 = 3.3 V, V
enable
= 2.8 V,
P
out
= +18 dBm (at OFDM modulation : 64QAM/54 Mbps)
P
out
= +18 dBm (at OFDM modulation : 64QAM/54 Mbps)
:
Δ
G
P
= 0.8 dB TYP. @ f = 2.4 to 2.5 GHz, V
CC
1, 2 = 3.3 V, V
enable
= 2.8 V,
: EVM = 2.5% TYP. @ V
CC
1, 2 = 3.3 V, V
enable
= 2.8 V,
P
out
= +18 dBm (at OFDM modulation : 64QAM/54 Mbps)
: 2f0 = 30 dBc TYP. @ V
CC
1, 2 = 3.3 V, V
enable
= 2.8 V,
P
out
= +18 dBm (at OFDM modulation : 64QAM/54 Mbps)
P
out
= +18 dBm (at OFDM modulation : 64QAM/54 Mbps)
μ
PG2318T5N-E2
μ
PG2318T5N-E2-A
DI
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
μ
PG2318T5N-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10668EJ02V0DS (2nd edition)
Date Published July 2007 NS
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
The mark <R> shows major revised points.
IN
U
•
Embossed tape 8 mm wide
•
Qty 3 kpcs/reel
This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package, and is suitable
This device realizes high efficiency, high gain and high output power by using InGaP HBT.
•
Pin 1, 6 face the perforation side of the tape
ED
Supplying Form
2.4 GHz SINGLE BAND POWER AMPLIFIER FOR W-LAN
2007
μ
PG2318T5N
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
1
2
3
6
5
4
1
2
3
(Top View)
Bias Circuit
6
5
4
6
5
4
(Bottom View)
1
2
3
Pin No.
1
2
3
4
5
Pin Name
V
enable
INPUT
V
CC
1
Parameter
Supply Voltage
Control Voltage
Input Power
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
V
CC
1, 2
V
enable
P
in
P
D
T
A
T
stg
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB, T
A
= +85°C
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
Parameter
Operating Frequency
Supply Voltage
Symbol
f
opt
MIN.
TYP.
MAX.
Unit
SC
O
V
CC
1, 2
V
enable
3.0
0
Control Voltage
NT
2 400
2 450
3.3
2.8
2 500
4.6
3.0
Data Sheet PG10668EJ02V0DS
DI
2
IN
U
Ratings
5.0
Unit
V
4.0
V
+10
dBm
mW
°C
500
Note
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
−45
to +85
−55
to +150
°C
MHz
V
V
ED
OUTPUT
V
CC
2
V
det
6
G5G
Remark
Exposed pad : GND
μ
PG2318T5N
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, f = 2 400 to 2 500 MHz, OFDM modulation : 64QAM/54 Mbps, V
CC
1, 2 = 3.3 V,
V
enable
= 2.8 V, external input and output matching, unless otherwise specified)
Parameter
Circuit Current
Power Gain
Gain Flatness
Control Current
Error Vector Magnitude
Input Return Loss
Output Return Loss
2nd Harmonics
3rd Harmonics
Power Detector Voltage
Symbol
I
CC
G
P
Test Conditions
P
out
= +18 dBm
P
out
= +18 dBm
P
out
= +18 dBm
P
out
= +18 dBm
P
out
= +18 dBm
P
out
=
−30
dBm (no-modulation)
P
out
=
−30
dBm (no-modulation)
P
out
= +18 dBm
P
out
= +18 dBm
P
out
= +18 dBm
MIN.
−
25.5
−
−
−
TYP.
120
28
MAX.
140
−
Unit
mA
dB
Δ
G
P
I
enable
EVM
RL
in
RL
out
2f0
3f0
V
det
IN
U
−
−
−
30
48
0.7
DI
SC
O
NT
Data Sheet PG10668EJ02V0DS
ED
0.8
3.2
2.5
15
5
1.3
−
−
dB
mA
%
−
−
−
dB
−
dB
−
−
−
dBc
dBc
V
3
μ
PG2318T5N
TYPICAL CHARACTERISTICS 1
(T
A
= +25°C, V
CC
1, 2 = 3.3 V, V
enable
= 2.8 V, OFDM modulated signal : 64QAM/54 Mbps, with external
input and output matching circuits, unless otherwise specified)
POWER GAIN, CIRCUIT CURRENT,
EVM vs. OUTPUT POWER
f = 2.45 GHz
G
P
Power Gain G
P
(dB), Circuit Current I
CC
/10 (mA)
Error Vector Magnitude EVM (%)
2nd Harmonics 2f0 (dBc)
24
21
18
15
12
9
6
3
0
0
8
7
6
5
4
3
EVM
5
10
15
20
2
1
0
25
–10
–15
–20
–25
–30
–35
–40
–45
–50
I
enable
4
3
2
1
2f0
IN
U
0
5
10
15
0
Error Vector Magnitude EVM (%)
I
CC
/10
V
det
20
0
25
Output Power P
out
(dBm)
Output Power P
out
(dBm)
Power Gain G
P
(dB), Circuit Current I
CC
/10 (mA)
30
27
24
21
18
15
12
9
6
3
0
POWER GAIN, CIRCUIT CURRENT,
EVM vs. OUTPUT POWER
10
9
8
7
6
5
4
3
2f0, CONTROL CURRENT, V
det
,
vs. OUTPUT POWER
f = 2.40 GHz
2.45 GHz
2.50 GHz
5
4
3
Control Current I
enable
(mA),
Power Detector Voltage V
det
(V)
2nd Harmonics 2f0 (dBc)
G
P
NT
–10
–15
–20
–25
–30
–35
–40
–45
–50
0
15
2
f = 2.40 GHz
2.45 GHz 1
2.50 GHz
0
20
25
Data Sheet PG10668EJ02V0DS
–5
I
enable
2f0
I
CC
/10
2
1
SC
O
EVM
V
det
5
10
15
20
Output Power P
out
(dBm)
0
5
10
0
25
Output Power P
out
(dBm)
Remark
The graphs indicate nominal characteristics.
DI
Control Current I
enable
(mA),
Power Detector Voltage V
det
(V)
27
9
–5
ED
5
30
10
0
2f0, CONTROL CURRENT, V
det
,
vs. OUTPUT POWER
f = 2.45 GHz
5
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