Agilent HSMP-389x & HSMP-489x Series
Surface Mount RF PIN Switch Diodes
Data Sheet
Features
• Unique Configurations in Surface
Mount Packages
– Add Flexibility
– Save Board Space
– Reduce Cost
• Switching
– Low Capacitance
– Low Resistance at Low
Current
• Low Failure in Time (FIT) Rate
[1]
4
Description
The HSMP-389x series is
optimized for switching
applications where low
resistance at low current and
low capacitance are required.
The HSMP-489x series
products feature ultra low
parasitic inductance. These
products are specifically
designed for use at
frequencies which are much
higher than the upper limit for
conventional PIN diodes.
Pin Connections and Package
Marking
1
2
3
6
5
Notes:
1. Package marking provides orientation,
identification, and date code.
2. See “Electrical Specifications” for appropri-
ate package marking.
GUx
• Matched Diodes for Consistent
Performance
• Better Thermal Conductivity for
Higher Power Dissipation
• Lead-free Option Available
Note:
1. For more information see the Surface Mount
PIN Reliability Data Sheet.
Package Lead Code Identification,
SOT-23/143
(Top View)
SINGLE
SERIES
Package Lead Code Identification,
SOT-323
(Top View)
SINGLE
SERIES
Package Lead Code Identification,
SOT-363
(Top View)
UNCONNECTED
TRIO
6
5
4
DUAL SWITCH
MODEL
6
5
4
#0
COMMON
ANODE
#2
COMMON
CATHODE
B
COMMON
ANODE
C
1
2
3
1
2
3
COMMON
CATHODE
L
LOW
INDUCTANCE
SINGLE
6
5
4
R
SERIESÐ
SHUNT PAIR
6
5
4
#3
UNCONNECTED
PAIR
#4
DUAL ANODE
E
DUAL ANODE
F
1
2
3
1
2
3
T
HIGH
FREQUENCY
SERIES
6
5
4
U
489B
#5
4890
1
2
3
V
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1 µs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23/143
1
100
150
-65 to 150
500
SOT-323/363
1
100
150
-65 to 150
150
ESD WARNING:
Handling Precautions Should Be Taken To
Avoid Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made
to the circuit board.
2
Electrical Specifications, T
C
= 25°C, each diode
Part Number
HSMP-
3890
3892
3893
3894
3895
389B
389C
389E
389F
389L
389R
389T
389U
389V
Test Conditions
Package
Marking
Code
G0
[1]
G2
[1]
G3
[1]
G4
[1]
G5
[1]
G0
[2]
G2
[2]
G3
[2]
G4
[2]
GL
[2]
S
[2]
Z
[2]
GU
[2]
GV
[2]
Lead
Code
0
2
3
4
5
B
C
E
F
L
R
T
U
V
Minimum
Breakdown
Voltage V
BR
(V)
100
Maximum
Series Resistance
R
S
(Ω)
2.5
Maximum
Total Capacitance
C
T
(pF)
0.30
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Dual Switch Mode
Low Inductance Single
Series-Shunt Pair
High Frequency Series Pair
V
R
= V
BR
Measure
I
R
≤
10 µA
I
F
= 5 mA
f = 100 MHz
V
R
= 5 V
f = 1 MHz
Notes:
1. Package marking code is white.
2. Package is laser marked.
High Frequency (Low Inductance, 500 MHz–3 GHz) PIN Diodes
Part
Number
HSMP-
Package
Marking
Code
[1]
Minimum
Breakdown
Voltage
V
BR
(V)
100
V
R
= V
BR
Measure
I
R
≤
10 µA
Maximum
Series
Resistance
R
S
(
Ω
)
2.5
I
F
= 5 mA
Typical
Total
Capacitance
C
T
(pF)
0.33
f = 1 MHz
V
R
= 5 V
Maximum
Total
Capacitance
C
T
(pF)
0.375
V
R
= 5 V
f = 1 MHz
Typical
Total
Inductance
L
T
(nH)
1.0
f = 500 MHz –
3 GHz
Configuration
Dual Anode
489x
GA
Test Conditions
Note:
1. SOT-23 package marking code is white; SOT-323 is laser marked.
Typical Parameters at T
C
= 25°C
Part Number
HSMP-
389x
Test Conditions
Series Resistance
R
S
(
Ω
)
3.8
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
τ
(ns)
200
I
F
= 10 mA
I
R
= 6 mA
Total Capacitance
C
T
(pF)
0.20 @ 5 V
3
HSMP-389x Series Typical Performance, T
C
= 25°C, each diode
100
0.55
INPUT INTERCEPT POINT (dBm)
120
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
0.50
TOTAL CAPACITANCE (pF)
RF RESISTANCE (OHMS)
0.45
0.40
0.35
0.30
0.25
1 GHz
0.20
04
8
12
16
20
1 MHz
10
1
0.1
0.01
0.1
1
10
100
11
I
F
- FORWARD BIAS CURRENT (mA)
V
R
- REVERSE VOLTAGE (V)
0
30
I
F
- FORWARD BIAS CURRENT (mA)
Figure 1. Total RF Resistance at 25 C
vs. Forward Bias Current.
Figure 2. Capacitance vs. Reverse
Voltage.
Figure 3. 2nd Harmonic Input Intercept
Point vs. Forward Bias Current.
200
100
T
rr
- REVERSE RECOVERY TIME (nS)
I
F
- FORWARD CURRENT (mA)
160
V
R
= - 2V
120
10
1
80
V
R
= - 5V
40
V
R
= - 10 V
0
10
15
20
25
30
0.1
0.01
0
0.2
125˚ C 25˚C - 50˚C
0.4
0.6
0.8
1.0
1.2
FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Figure 4. Typical Reverse Recovery
Time vs. Reverse Voltage.
Figure 5. Forward Current vs. Forward
Voltage.
Typical Applications for Multiple Diode Products
1
2
3
3
2
1
1
1
2
"ON"
"OFF"
1
0
0
2
+V
-V
3
2
1
0
4
5
6
b1
b2
b3
RF in
4
5
6
RF out
Figure 6. HSMP-389L used in a SP3T Switch.
Figure 7. HSMP-389L Unconnected Trio used in a Dual Voltage,
High Isolation Switch.
4
Typical Applications for Multiple Diode Products (continued)
1
+V
0
1
6
5
4
2
0
+V
"ON"
"OFF"
1
RF out
6
5
4
1
RF in
2
3
12
RF out
3
RF in
2
Figure 8. HSMP-389L Unconnected Trio used in a Positive
Voltage, High Isolation Switch.
Figure 9. HSMP-389T used in a Low Inductance Shunt Mounted
Switch.
Bias
Xmtr
C
Ant
λ
4
C
Rcvr
Bias
Xmtr
bias
Ant
λ
4
Rcvr
Bias
Antenna
Xmtr
PA
λ
4
HSMP-389V
LNA
HSMP-389U
λ
4
Rcvr
Figure 10. HSMP-389U Series/Shunt Pair used in a 900 MHz
Transmit/Receive Switch.
Figure 11. HSMP-389V Series/Shunt Pair used in a 1.8 GHz
Transmit/Receive Switch.
5
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