SGM2N60UF
IGBT
SGM2N60UF
Ultrafast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 1.2A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
D
C
S
G
G
E
SOT-223
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
@ T
C
= 25°C
Collector Current
@ T
C
= 100°C
Pulsed Collector Current
Maximum Power Dissipation
@ T
a
= 25°C
- Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
SGM2N60UF
600
±
20
2.4
1.2
10
2.1
0.017
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W/°C
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
Max.
60
Units
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2003 Fairchild Semiconductor Corporation
SGM2N60UF Rev.A
SGM2N60UF
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 1.2mA, V
CE
= V
GE
I
C
= 1.2A
,
V
GE
= 15V
I
C
= 2.4A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
98
18
4
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
80
95
30
13
43
19
24
115
176
36
27
63
9
3
1.5
7.5
--
--
130
160
--
--
70
--
--
200
250
--
--
100
14
5
3
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 1.2A,
R
G
= 200Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 1.2A,
R
G
= 200Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 1.2A,
V
GE
= 15V
Measured 5mm from PKG
©2003 Fairchild Semiconductor Corporation
SGM2N60UF Rev. A
SGM2N60UF
12
Common Emitter
T
C
= 25 C
10
o
6
20V
5
15V
Common Emitter
V
GE
= 15V
T
C
= 25 C
T
C
= 125 C
o
o
Collector Current, I
C
[A]
Collector Current, I
C
[A]
8
12V
6
V
GE
= 10V
4
4
3
2
2
1
0
0
2
4
6
8
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
3.0
Common Emitter
V
GE
= 15V
2.5
2.4A
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V [V]
CE
3
Load Current [A]
2.0
1.2A
2
I
C
= 0.6A
1
1.5
1.0
0.5
Duty cycle : 50%
T
C
= 100 C
Power Dissipation = 4W
0.1
1
10
100
1000
o
0
0
30
60
90
o
0.0
120
150
Case Temperature, T
C
[ C]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25 C
o
20
Common Emitter
T
C
= 125 C
o
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
2.4A
4
I
C
= 0.6A
0
1.2A
4
I
C
= 0.6A
1.2A
2.4A
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGM2N60UF Rev. A
SGM2N60UF
160
Common Emitter
V
GE
= 0V, f = 1MHz
o
T
C
= 25 C
Cies
100
Common Emitter
V
CC
= 300V, V
GE
= +15V
I
C
= 1.2A
T
C
= 25 C
T
C
= 125 C
o
o
120
Capacitance [pF]
80
Coes
40
Cres
0
1
10
30
Switching Time [ns]
Ton
Tr
10
10
100
500
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
Common Emitter
V
CC
= 300V, V
GE
= +15V
I
C
= 1.2A
T
C
= 25 C
o
o
100
Common Emitter
V
CC
= 300V, V
GE
= +15V
I
C
= 1.2A
T
C
= 25 C
Toff
T
C
= 125 C
o
o
Switching Time [ns]
T
C
= 125 C
Switching Loss [uJ]
Eon
Eoff
Tf
Toff
100
Eoff
Tf
10
50
10
100
500
5
10
100
500
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
100
Common Emitter
V
CC
= 300V, V
GE
= +15V
R
G
= 200
Ω
1000
Common Emitter
V
CC
= 300V, V
GE
= +15V
R
G
= 200
Ω
T
C
= 25 C
o
o
Switching Time [ns]
Switching Time [ns]
T
C
= 25 C
o
T
C
= 125 C
o
T
C
= 125 C
Toff
Toff
Tf
Tf
Ton
Tr
100
10
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGM2N60UF Rev. A
SGM2N60UF
100
Common Emitter
V
CC
= 300V, V
GE
= +15V
R
G
= 200
Ω
15
Common Emitter
R
L
= 250
Ω
Gate - Emitter Voltage, V
GE
[ V ]
Tc = 25 C
12
o
T
C
= 25 C
o
o
Switching Loss [uJ]
T
C
= 125 C
9
300 V
6
V
CE
= 100 V
3
200 V
Eon
Eon
Eoff
10
Eoff
0.5
1.0
1.5
2.0
2.5
0
0
2
4
6
8
10
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
20
10
I
C
MAX. (Pulsed)
10
50
µ
s
Collector Current, I
C
1
1㎳
0.1
DC Operation
Collector Current, I
C
[A]
[A]
I
C
MAX. (Continuous)
100
µ
s
1
0.01
1E-3
Single Nonrepetitive
o
Pulse T
C
= 25 C
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
V
GE
=20V, T
C
=100 C
o
1
10
100
Collector-Emitter Voltage, V
CE
[V]
1000
0.1
1
10
100
1000
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
2
T h e r m a l R e s p o n s e , / Wt ] jc [
C Z h
D = 0 .5
0 .2
10
1
0 .1
0 .0 5
0 .0 2
o
10
0
0 .0 1
Pdm
t1
s i n g le p u l s e
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
R e c t a n g u la r P u ls e D u r a t io n [ s e c ]
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation
SGM2N60UF Rev. A
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