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NCP3418PD

产品描述HALF BRDG BASED MOSFET DRIVER, PDSO8
产品类别模拟混合信号IC    驱动程序和接口   
文件大小91KB,共10页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

NCP3418PD概述

HALF BRDG BASED MOSFET DRIVER, PDSO8

NCP3418PD规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码SOIC
包装说明HSOP, SOP8,.25
针数8
Reach Compliance Codenot_compliant
ECCN代码EAR99
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度4.9 mm
湿度敏感等级1
功能数量1
端子数量8
最高工作温度85 °C
最低工作温度
封装主体材料PLASTIC/EPOXY
封装代码HSOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG
峰值回流温度(摄氏度)235
电源12 V
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压13.2 V
最小供电电压4.6 V
标称供电电压12 V
表面贴装YES
温度等级OTHER
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
断开时间0.06 µs
接通时间0.06 µs
宽度3.9 mm

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NCP3418, NCP3418A
Dual Bootstrapped 12 V
MOSFET Driver with
Output Disable
The NCP3418 and NCP3418A are dual MOSFET gate drivers
optimized to drive the gates of both high−side and low−side power
MOSFETs in a synchronous buck converter. Each of the drivers is
capable of driving a 3000 pF load with a 25 ns propagation delay and a
20 ns transition time.
With a wide operating voltage range, high or low side MOSFET
gate drive voltage can be optimized for the best efficiency. Internal,
adaptive nonoverlap circuitry further reduces switching losses by
preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as
high as 30 V, with transient voltages as high as 35 V. Both gate outputs
can be driven low by applying a low logic level to the Output Disable
(OD) pin. An Undervoltage Lockout function ensures that both driver
outputs are low when the supply voltage is low, and a Thermal
Shutdown function provides the IC with overtemperature protection.
The NCP3418A is identical to the NCP3418 except that there is no
internal charge pump diode.
The NCP3418 is pin−to−pin compatible with Analog Devices
ADP3418 with the following advantages:
http://onsemi.com
MARKING
DIAGRAMS
8
8
1
SO−8
D SUFFIX
CASE 751
1
8
8
1
SO−8 EP
PD SUFFIX
CASE 751AC
3418
ALYW
1
1
8
3418A
ALYW
3418
ALYW
1
8
3418A
ALYW
Faster Rise and Fall Times
Internal Charge Pump Diode Reduces Cost and Parts Count
Thermal Shutdown for System Protection
Integrated OVP
Internal Pulldown Resistor Suppresses Transient Turn On of Either
MOSFET
Anti Cross−Conduction Protection Circuitry
Floating Top Driver Accommodates Boost Voltages of up to 30 V
One Input Signal Controls Both the Upper and Lower Gate Outputs
Output Disable Control Turns Off Both MOSFETs
Complies with VRM 10.x Specifications
Undervoltage Lockout
Thermal Shutdown
Thermally Enhanced Package Available
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN CONNECTIONS
BST
IN
OD
V
CC
1
8
DRVH
SW
PGND
DRVL
Features
ORDERING INFORMATION
Device
NCP3418D
NCP3418DR2
NCP3418ADR2
NCP3418ADR2G
NCP3418PD
NCP3418PDR2
Package
SO−8
SO−8
SO−8
SO−8
SO−8 EP
Shipping
98 Units/Rail
2500 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
98 Units/Rail
SO−8 EP 2500 Tape & Reel
NCP3418APDR2 SO−8 EP 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 10
Publication Order Number:
NCP3418/D

 
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