EEPROMs
MN61113, MN61113S
2K-Bit EEPROMs
Overview
The MN61113 and MN61113S are 2048-bit, bit sequen-
tial EEPROMs with built-in address counters. They se-
quentially increment the address with the clock input to
produce serial output.
They include built-in charge pump circuit and timer for
automatically erasing, writing, and modifying data using
only a single 3 volt power supply.
To reduce write times, they include a block write func-
tion for writing up to 32 bits at a time. This function makes
it possible to rewrite the contents of all 2048 bits within
1 second (typ.).
Pin Assignment
MN61113
MN61113S
DIP008-P-0300A
SOP008-P-0225
DATA
CE
V
CC
GND
1
2
3
4
8
7
6
5
OE
RST
CLK
PGM
Features
2048 words
×
1 bit organization
Built-in reset function
Tristate output
Low power consumption
• 3 volt read: 1.5 mW (max.)
• 3 volt program: 6 mW (max.)
• 3 volt standby: 60
µW
(max.)
Single 3 volt power supply (charge pump circuit
built in)
Self timer for use in automatically erasing and
writing data
Built-in data polling function
Write cycles: 10
5
times
Data storage interval: 10 years
Pull-up resistor on CE pin.
Pull-down resistors on PGM, CLK, and RST pins
(TOP VIEW)
Applications
Personal wireless equipment, cordless telephones,
storage for recognition and adjustment data for
terminals, etc.
1
EEPROMs
Pin Descriptions
Pin No.
1
2
3
4
5
6
7
8
Symbol
DATA
CE
V
CC
GND
PGM
CLK
RST
OE
Pin Name
Data I/O
Chip enable
Power supply voltage
Ground
Program
Clock input
Reset input
Output enable
MN61113, MN61113S
Electrical Characteristics
V
CC
=2.6 to 3.5V, Ta=–10˚C to +60˚C
3 Volt Operation
Parameter
Power supply voltage
"L" level input leakage current
"H" level input leakage current
Output leakage current
"L" level input voltage
"H" level input voltage
V
CC
power supply current
(during operation)
V
CC
power supply current
(during standby)
"L" level output voltage
"H" level output voltage
Symbol
V
CC
I
LIL
I
LIH
I
LO
V
IL
V
IH
I
CC
Test Conditions
Read mode
Program mode
CE pin
Other pins
PGM, CLK, and RST pins
Other pins
min
2.6
3.0
–50
–10
—
–10
—
– 0.1
0.8
V
CC
max
3.5
3.5
—
10
–20
10
10
0.2
V
CC
V
CC
+0.3
500
2000
20
Unit
V
µA
µA
µA
V
V
Read mode
CLK;f=250kHz
Program mode
—
—
—
µA
I
SB
CE = V
CC
+ 0.3 V;
RST and PGM pins at V
CC
;
CLK pin open
µA
V
OL
V
OH
I
OL
=400µA
I
OH
=10µA
—
V
CC
– 0.3
0.3
—
V
V
3
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