电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MN63112S

产品描述2K-Bit EEPROM
产品类别存储    存储   
文件大小29KB,共4页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
下载文档 详细参数 全文预览

MN63112S概述

2K-Bit EEPROM

MN63112S规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Panasonic(松下)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codeunknow
ECCN代码EAR99
备用内存宽度8
数据保留时间-最小值10
耐久性100000 Write/Erase Cycles
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度5 mm
内存密度2048 bi
内存集成电路类型EEPROM
内存宽度8
功能数量1
端子数量8
字数256 words
字数代码256
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度-10 °C
组织256X8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2/5 V
认证状态Not Qualified
座面最大高度1.9 mm
串行总线类型3-WIRE
最大待机电流0.00002 A
最大压摆率0.003 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)1.8 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度4.3 mm

文档预览

下载PDF文档
EEPROMs
MN63112S
2K-Bit EEPROM
Overview
The MN63112S is a 2K-bit EEPROM supporting se-
rial I/O and operating on a single power supply with a
voltage between 1.8 and 5.5 V. It provides the following
pins for easy interfacing to microprocessors or
microcontrollers: chip select (CS), serial clock (SK), data
input (DI), and data output (DO). It includes a built-in
timer for use in automatically erasing and writing data
during data update operations.
The ORG pin provides a choice of two memory orga-
nizations: 256
×
8 bits when ORG is connected to ground
and 128
×
16 bits when ORG is connected to V
CC
. An
internal pull-up resistor makes the latter the default con-
figuration.
Conversion of peripheral circuits to CMOS realizes
great reductions in power consumption. Use of floating
gate memory cells and a built-in error correction circuit
ensures reliable operation for 10
5
write cycles.
Pin Assignment
CS
SK
DI
DO
1
2
3
4
8
7
6
5
V
CC
N.C.
ORG
GND
( TOP VIEW )
SOP008-P-0225
Features
Choice of memory organizations: 256
×
8 bits and
128
×
16 bits
Floating gate memory cells
Function blocking erroneous writes
Low power consumption
- Reads: max. 6.6 mW for V
CC
= 3.3 V
- Standby: max. 66
µW
for V
CC
= 3.3 V
Built-in self-timer for use in automatically erasing
and writing
Built-in error correction circuit that guarantees 10
5
write cycles
10-year data preservation period
Applications
Keyless entry systems, cordless telephones, storage for
recognition and adjustment data for terminals, etc.
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2654  1953  1532  2287  2293  27  23  36  59  38 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved