OM6214SS OM6216SS
OM6215SS OM6217SS
TWO POWER MOSFETS IN HERMETIC
ISOLATED SIP PACKAGE
100V Thru 500V, Dual High Current,
N-Channel MOSFETs
FEATURES
•
•
•
•
•
Two Isolated MOSFETs In A Hermetic Metal Package
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM6214SS
OM6215SS
OM6216SS
OM6217SS
V
DS
100V
200V
400V
500V
R
DS(ON)
.065
.095
.3
.4
I
D(MAX)
30A
25A
15A
13A
3.1
SCHEMATIC
CONNECTION DIAGRAM
FET#1
D
S
G
G
FET#2
S
D
4 11 R4
Supersedes 1 07 R3
3.1 - 109
3.1
OM6214SS - OM6217SS
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
.09
Current
1
30
1.1
0.1
0.2
2.0
100
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
Current
1
25
0.1
0.2
2.0
200
T
C
= 25° unless otherwise noted
STATIC P/N OM6214SS (Per FET) (100 Volt)
Min. Typ. Max. Units Test Conditions
V
4.0
±100
0.25
1.0
V
nA
mA
mA
A
1.3
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ±20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A,
T
C
= 125 C
STATIC P/N OM6215SS (Per FET) (200 Volt)
Min. Typ. Max. Units Test Conditions
V
4.0
±100
0.25
1.0
V
nA
mA
mA
A
1.36 1.52
.085 .095
0.14 0.17
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
m
V
GS
= ±20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
V
DS(on)
Static Drain-Source On-State
.055 .065
0.11
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2700
1300
470
28
45
100
50
pF
pF
pF
ns
ns
ns
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
400
- 2.5
V
ns
- 140
A
- 30
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
g
fs
Forward Transductance
1
9.0
10
S(W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
20 A
R
g
= 5.0
W
, V
G
= 10V
(MOSFET) switching times are
essentially independent of
operating temperature.
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
8.0 12.5
2400
600
250
25
60
85
38
S(W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
16 A
R
g
= 5.0
W
,V
GS
= 10V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
350
- 25
- 100
-2
A
A
V
ns
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
3.1 - 110
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
G
D
the integral P-N
Junction rectifier.
S
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.25
15
2.0
0.1
0.2
2.0
400
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
13
2.1
0.3
0.1
0.2
2.0
500
T
C
= 25° unless otherwise noted
STATIC P/N OM6216SS (Per FET) (400 Volt)
Min. Typ. Max. Units Test Conditions
V
4.0
±100
0.25
1.0
V
nA
mA
mA
A
2.4
0.3
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ±20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A,
T
C
= 125 C
STATIC P/N OM6217SS (Per FET) (500 Volt)
Min. Typ. Max. Units Test Conditions
V
4.0
±100
0.25
1.0
V
nA
mA
mA
A
2.8
0.4
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= ±20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
V
DS(on)
Static Drain-Source On-State
0.50 0.60
0.66 0.88
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward
8.0
9.6
2900
450
150
30
40
80
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 58A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
@
8.0 A
R
g
=5.0
W
, V
GS
=10V
(MOSFET) switching times are
essentially independent of
operating temperature.
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
6.0
7.2
2600
280
40
30
46
75
31
S(W
)
V
DS
2 V
DS(on)
, I
D
= 7 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5.0
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
Voltage
1
400
- 60
- 1.6
A
V
ns
(Body Diode)
Diode Forward
Reverse Recovery Time
- 15
A
Modified MOSPOWER
symbol showing
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
Voltage
1
400
- 13
- 52
- 1.4
A
A
V
ns
the integral P-N
Junction rectifier.
(Body Diode)
V
SD
t
rr
Diode Forward
Reverse Recovery Time
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
(W )
3.1 - 111
DYNAMIC
Transductance
1
DYNAMIC
Forward Transductance
1
Modified MOSPOWER
symbol showing
G
D
the integral P-N
OM6214SS - OM6217SS
Junction rectifier.
S
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OM6214SS - OM6217SS
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1
OM6214SS OM6215SS OM6216SS OM6217SS Units
100
100
± 30
± 20
± 140
125
50
1.0
.025
200
200
± 25
± 16
± 100
125
50
1.0
.025
400
400
± 15
±9
± 60
125
50
1.0
.025
500
500
± 13
±8
± 52
125
50
1.0
.025
V
V
A
A
A
W
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150 -55 to 150 -55 to 150
300
300
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
THERMAL RESISTANCE
(Per FET at T
A
= 25°C)
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.0
40
°C/W
°C/W
Free Air Operation
POWER DERATING (Per Device)
P
D
- POWER DISSIPATION (WATTS)
180
150
120
90
60
30
0
0
25
50
75
100 125 150 175
MECHANICAL OUTLINE
1.375
.770
.302
.265
.752
REF.
.040
3.1
Rq
JC
= 1.0°C/W
.118
.150 DIA.
THRU 2
PLACES
.487
.500
MIN.
.200 TYP.
1.000
.060 DIA.TYP.
6 PLACES
.188
REF.
.140 TYP.
.270
MAX.
T
C
- CASE TEMPERATURE ( °C)
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