SUD50N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175
_C
MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
b
84
b
59b
r
DS(on)
(W)
0.0065 at V
GS
= 10 V
0.0095 at V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175
_C
Junction Temperature
D
Optimized for Low-Side Synchronous Rectifier
Operation
D
100 % R
g
Tested
*
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD50N03-06P
SUD50N03-06P–E3 (Lead (Pb)–free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
a
T
C
= 25
_C
T
C
= 100
_C
I
D
I
DM
I
S
I
AS
L = 0 1 mH
0.1
T
C
= 25
_C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25
_C
P
D
T
J
, T
stg
E
AS
Symbol
V
DS
V
GS
Limit
30
"20
84
b
59
b
100
25
45
101.25
88
8.3
a
–55 to 175
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Avalanche Energy
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71844
S-52636—Rev. D, 02-Jan-06
www.vishay.com
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
C/W
1
SUD50N03-06P
Vishay Siliconix
SPECIFICATIONS (T
J
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"
20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125
_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain Source On-State
Drain-Source On State
Forward
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
20
0.0078
50
0.0053
0.0065
0.0105
0.0095
S
W
30
1.0
3.0
"
100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 50 A
1
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3100
565
255
1.9
21
10
7.5
12
12
30
10
20
20
45
15
ns
3.1
30
nC
W
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25
_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
35
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2 %.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25
_C
UNLESS NOTED)
Output Characteristics
200
V
GS
= 10 thru 6 V
160
I D – Drain Current (A)
5V
I D – Drain Current (A)
80
100
Transfer Characteristics
120
60
80
4V
40
T
C
= 125
_C
20
25
_C
–55
_C
0
40
3V
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71844
S-52636—Rev. D, 02-Jan-06
2
SUD50N03-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25
_C
UNLESS NOTED)
Transconductance
120
T
C
= –55
_C
25
_C
80
125
_C
r
DS(on)
– On-Resistance (W)
0.0150
On-Resistance vs. Drain Current
100
g fs – Transconductance (S)
0.0125
0.0100
V
GS
= 4.5 V
0.0075
V
GS
= 10 V
0.0050
60
40
20
0.0025
0
0
10
20
30
40
50
0.0000
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
4000
3500
3000
2500
2000
1500
1000
C
rss
500
0
0
5
10
15
20
25
30
C
oss
C
iss
V GS – Gate-to-Source Voltage (V)
8
V
DS
= 15 V
I
D
= 50 A
10
Gate Charge
C – Capacitance (pF)
6
4
2
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 20 A
r
DS(on)
– On-Resistance
(Normalized)
I S – Source Current (A)
1.5
100
Source-Drain Diode Forward Voltage
T
J
= 150
_C
10
T
J
= 25
_C
1.0
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Document Number: 71844
S-52636—Rev. D, 02-Jan-06
www.vishay.com
3
SUD50N03-06P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
30
1000
Limited
by r
DS(on)
24
I D – Drain Current (A)
I D – Drain Current (A)
100
10, 100
ms
Safe Operating Area
18
10
1 ms
10 ms
12
1
100 ms
1s
10 s
100 s
dc
6
0.1
T
A
= 25
_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
T
A
– Ambient Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
100
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Document Number: 71844
S-52636—Rev. D, 02-Jan-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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