74ACT14
HEX SCHMITT INVERTER
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 7.2 ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 4µA(MAX.) at T
A
=25°C
50Ω TRANSMISSION LINE DRIVING
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 14
IMPROVED LATCH-UP IMMUNITY
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
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P
b
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b
O
PIN CONNECTION AND IEC LOGIC SYMBOLS
DESCRIPTION
The 74ACT14 is an advanced high-speed CMOS
HEX SCHMITT INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
b
O
CMOS output voltage levels.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All inputs and outputs are equipped with protec-
tion circuits against static discharge, giving them
2KV ESD immunity and transient excess voltage.
so
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P
TUBE
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TSSOP
T&R
74ACT14B
74ACT14M
P
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74ACT14MTR
74ACT14TTR
April 2001
1/8
74ACT14
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 3, 5, 9, 11,
13
2, 4, 6, 8, 10,
12
7
14
SYMBOL
1A to 6A
1Y to 6Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
H
Y
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
O
Supply Voltage
DC Input Voltage
Parameter
te
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o
r
s
P
b
O
te
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)-
(s
so
b
ct
u
d
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s)
P
t(
te
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le
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od
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s
P
b
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te
le
so
b
O
DC Output Voltage
DC Input Diode Current
DC Output Current
±
20
±
20
±
50
I
OK
DC Output Diode Current
I
CC
or I
GND
DC V
CC
or Ground Current
T
stg
Storage Temperature
T
L
±
300
300
Lead Temperature (10 sec)
ro
P
uc
d
H
L
s)
t(
Unit
V
V
V
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
s)
t(
uc
mA
mA
mA
mA
°C
°C
-65 to +150
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
Parameter
Value
Unit
V
V
V
°C
Supply Voltage
Input Voltage
Output Voltage
4.5 to 5.5
0 to V
CC
0 to V
CC
T
op
Operating Temperature
-55 to 125
1) V
IN
from 0.8V to 2.0V
2/8
74ACT14
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
V
OL
Low Level Output
Voltage
4.5
5.5
4.5
5.5
I
I
I
CCT
I
CC
Input Leakage Cur-
rent
Max I
CC
/Input
Quiescent Supply
Current
5.5
5.5
5.5
5.5
I
O
=-50
µA
I
O
=-50
µA
I
O
=-24 mA
I
O
=-24 mA
I
O
=50
µA
I
O
=50
µA
I
O
=24 mA
I
O
=24 mA
V
I
= V
CC
or GND
V
I
= V
CC
- 2.1V
T
A
= 25°C
Min.
2.0
2.0
0.6
0.6
1.4
1.5
4.49
5.49
Typ.
Max.
Value
-40 to 85°C
Min.
2.0
2.0
0.6
0.6
1.4
1.5
Max.
-55 to 125°C
Min.
2.0
2.0
0.6
0.6
1.4
1.5
Max.
V
V
V
Unit
V
t+
V
t-
V
h
V
OH
High Level Input
Voltage
Low Level Input
Voltage
Hysteresis Voltage
High Level Output
Voltage
0.4
0.4
4.4
5.4
3.86
4.86
0.001
0.001
0.4
0.4
4.4
5.4
3.76
4.76
0.4
0.4
4.4
5.4
0.1
0.1
)-
(s
so
b
ct
u
d
-O
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s)
P
t(
te
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s
P
b
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so
b
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V
I
= V
CC
or GND
I
OLD
I
OHD
Dynamic Output
Current (note 1, 2)
V
OLD
= 1.65 V max
V
OHD
= 3.85 V min
Test Condition
Symbol
Parameter
V
CC
(V)
Min.
t
PLH
t
PHL
Propagation Delay
Time
5.0
(*)
7.2
(*) Voltage range is 5.0V
±
0.5V
b
O
so
t
le
4
0.36
0.36
P
e
ro
40
75
0.1
0.1
uc
d
3.7
4.7
s)
t(
0.1
0.1
0.5
0.5
V
0.44
0.6
P
te
le
Value
±
0.1
od
r
0.44
±
1
1.5
-75
s)
t(
uc
±
1
1.6
40
50
-50
V
µA
mA
µA
mA
mA
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50Ω
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, R
L
= 500
Ω,
Input t
r
= t
f
= 3ns)
T
A
= 25°C
Typ.
Max.
11.4
-40 to 85°C
Min.
Max.
14.0
-55 to 125°C
Min.
Max.
14.0
Unit
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
Symbol
Parameter
V
CC
(V)
5.0
5.0
T
A
= 25°C
Typ.
5
Max.
10
Min.
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
f
IN
= 10MHz
30
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per gate)
3/8
74ACT14
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 500Ω or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS
(f=1MHz; 50% duty cycle)
)-
(s
so
b
ct
u
d
-O
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s)
P
t(
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P
b
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b
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b
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P
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P
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t(
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4/8
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