MWI 50-12 A7
MWI 50-12 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
I
C25
= 85 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.2 V
Type:
MWI 50-12 A7
MWI 50-12 A7T
NTC - Option:
without NTC
with NTC
1
2
5
6
9
10
16
15
14
T
NTC
3
4
17
7
8
11
12
T
E72873
See outline drawing for pin arrangement
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
85
60
I
CM
=
100
V
CEK
≤
V
CES
10
350
V
V
A
A
A
µs
W
Features
●
●
●
●
●
●
●
●
●
●
●
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
●
●
●
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.2
2.5
4.5
3
200
100
70
500
70
7.6
5.6
3300
230
2.7
6.5
4
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.35 K/W
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
●
●
●
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
AC motor control
AC servo and robot drives
power supplies
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 22
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
1-4
MWI 50-12 A7
MWI 50-12 A7T
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
110
70
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
Conditions
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 50 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
2.2
1.6
40
200
2.6
1.8
V
V
A
ns
0.61 K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 20.7 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 6 m
Ω
Thermal Response
Temperature Sensor NTC
(MWI ... A7T version only)
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
Symbol
R
pin-chip
d
S
d
A
R
thCH
Weight
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
0.02
180
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+125
2500
2.7 - 3.3
°C
°C
V~
Nm
Conditions
T = 25°C
Characteristic Values
min.
typ. max.
4.75
5.0
3375
5.25 kΩ
K
IGBT (typ.)
C
th1
= 0.22 J/K; R
th1
= 0.26 K/W
C
th2
= 1.74 J/K; R
th2
= 0.09 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.151 J/K; R
th1
= 0.482 K/W
C
th2
= 1.003 J/K; R
th2
= 0.124 K/W
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
min.
typ. max.
5
mΩ
mm
mm
K/W
g
Higher magnification on page B3 - 72
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
2-4
MWI 50-12 A7
MWI 50-12 A7T
120
T
J
= 25°C
A
100
I
C
120
A
100
I
C
80
11V
11V
V
GE
=17V
15V
13V
T
J
= 125°C
V
GE
=17V
15V
13V
80
60
40
9V
60
40
20
0
0.0
9V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
3.0
V
0.5
1.0
1.5
2.0
2.5 3.0
V
CE
3.5
V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120
A
100
I
C
V
CE
= 20V
T
J
= 25°C
180
T
J
= 125°C
A
150
I
F
T
J
= 25°C
80
60
40
20
0
5
6
7
8
9
10
V
GE
120
90
60
30
0
11
V
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
20
V
V
GE
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
300
ns
t
rr
V
CE
= 600V
I
C
= 50A
A
I
RM
15
t
rr
80
10
40
5
T
J
= 125°C
V
R
= 600V
I
F
= 50A
200
I
RM
100
0
0
50
100
150
200
Q
G
0
250
nC
0
200
400
600
MWI50-12A7
0
800
A/μs
-di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
3-4
MWI 50-12 A7
MWI 50-12 A7T
24
mJ
E
on
120
ns
90
t
d(on)
t
60
t
r
V
CE
= 600V
V
GE
= ±15V
R
G
= 22Ω
T
J
= 125°C
12
mJ
10
E
off
600
E
off
ns
500
t
d(off)
400 t
300
200
100
0
0
20
40
60
80
I
C
100 A
18
8
6
4
V
CE
= 600V
V
GE
= ±15V
R
G
= 22Ω
T
J
= 125°C
12
6
E
on
30
2
0
t
f
0
0
20
40
60
I
C
0
80
100
A
Fig. 7 Typ. turn on energy and switching
times versus collector current
20
mJ
E
on
240
t
d(on)
E
on
ns
180
t
E
off
Fig. 8 Typ. turn off energy and switching
times versus collector current
10
mJ
1500
ns
1200
t
900
600
300
t
f
0
15
V
CE
= 600V
V
GE
= ±15V
I
C
= 50A
T
J
= 125°C
8
6
V
CE
= 600V
V
GE
= ±15V
I
C
= 50A
T
J
= 125°C
t
d(off)
E
off
10
t
r
120
4
60
5
2
0
0
0 10 20 30 40 50 60 70 80 90 100
Ω
R
G
0
0 10 20 30 40 50 60 70 80 90 100
Ω
R
G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
100
I
CM
1
K/W
0.1
Z
thJC
R
G
= 22Ω
T
J
= 125°C
V
CEK
< V
CES
Fig.10 Typ. turn off energy and switching
times versus gate resistor
80
60
40
20
0
0
200
400
600
800 1000 1200
V
V
CE
0.01
0.001
0.0001
diode
IGBT
single pulse
MWI50-12A7
0.00001
0.00001 0.0001
0.001
0.01
t
0.1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
4-4
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