StrongIRFET™
IRFR7540PbF
IRFU7540PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
G
S
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
I
D (Package Limited)
60V
4.0m
4.8m
110A
90A
D
S
S
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
D-Pak
IRFR7540PbF
G
I-Pak
IRFU7540PbF
G
Gate
D
Drain
S
Source
Base part number
Package Type
IRFR7540PbF
IRFU7540PbF
D-Pak
I-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tube
75
Orderable Part Number
IRFR7540PbF
IRFR7540TRPbF
IRFR7540TRLPbF
IRFU7540PbF
)
RDS(on), Drain-to -Source On Resistance (m
20
ID = 66A
15
ID, Drain Current (A)
125
Limited by Package
100
75
10
TJ = 125°C
5
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
50
25
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient (PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
IRFR/U7540PbF
Max.
110
78
90
440*
140
0.95
± 20
-55 to + 175
300
160
273
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.05
50
110
mJ
A
mJ
Units
°C/W
Units
A
W
W/°C
V
°C
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max.
––– –––
48
4.0
5.2
–––
–––
–––
–––
–––
2.4
–––
4.8
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 66A
m
V
GS
= 6.0V, I
D
= 33A
V
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 60V, V
GS
= 0V
µA
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 90A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 72
µ
H, R
G
= 50, I
AS
= 66A, V
GS
=10V.
I
SD
66A, di/dt
1190A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 23A, V
GS
=10V.
*
Pulse drain current is limited at 360A by source bonding technology.
2
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December 17, 2014
IRFR/U7540PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
86
22
27
59
8.7
38
59
32
4360
410
260
410
530
Typ.
–––
–––
–––
11
34
37
36
47
1.9
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=66A
130
I
D
= 66A
–––
V
DS
= 30V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 30V
–––
I
D
= 66A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
110
A
440*
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 66A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 66A,V
DS
= 60V
T
J
= 25°C
V
DD
= 51V
ns
T
J
= 125°C
I
F
= 66A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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December 17, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFR/U7540PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
1
4.5V
10
60µs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
60µs
PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.5
ID = 66A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
TJ = 175°C
TJ = 25°C
1.5
1
VDS = 25V
0.1
2
3
4
5
6
7
8
60µs
PULSE WIDTH
1.0
0.5
-60
-20
20
60
100
140
180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID = 66A
VDS = 48V
VDS = 30V
VDS= 12V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
December 17, 2014
1000
1000
IRFR/U7540PbF
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
100
TJ = 175°C
100
Limited by Package
10
TJ = 25°C
10
OPERATION IN THIS
AREA LIMITED BY RDS(on)
10msec
1msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
VDS , Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.7
80
Id = 1.0mA
0.6
76
0.5
Energy (µJ)
0.4
0.3
0.2
0.1
72
68
64
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
17
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 12.
Typical C
oss
Stored Energy
14
11
8
5
2
0
50
100
150
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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December 17, 2014
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