IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV415K-600P
Dual ultrafast power diode
24 December 2014
Product data sheet
1. General description
Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package.
2. Features and benefits
•
•
•
•
Very low on-state loss
Fast switching
Low leakage current
Low thermal resistance
3. Applications
•
•
Active PFC in air conditioner
Interleaved PFC topology in switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5; T
mb
≤ 126 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
I
F
= 15 A; T
j
= 150 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7
-
1.1
1.4
V
Conditions
Min
-
-
Typ
-
-
Max
600
15
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
25
50
ns
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TO
3P
NXP Semiconductors
BYV415K-600P
Dual ultrafast power diode
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
mb
anode 1
cathode
anode 2
mounting base; connected to
cathode
Simplified outline
Graphic symbol
A1
K
A2
sym125
1
2
3
TO3P (SOT1259)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYV415K-600P
TO3P
Description
Plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO3P
Version
SOT1259
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYV415K-600P
Type number
BYV415K-600P
BYV415K-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
24 December 2014
2 / 11
NXP Semiconductors
BYV415K-600P
Dual ultrafast power diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
O(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
average output current
repetitive peak forward current
non-repetitive peak forward
current
DC
δ = 0.5; T
mb
≤ 126 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5; T
mb
≤ 126 °C; square-wave
pulse; both diodes conducting
δ = 0.5; t
p
= 25 µs; T
mb
≤ 126 °C;
Square-ware pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
T
stg
T
j
40
P
tot
(W)
30
0.5
20
0.1
0.2
10
Conditions
Min
-
-
-
-
-
-
-
-
-65
-
Max
600
600
600
15
30
15
140
155
175
175
aaa-015107
Unit
V
V
V
A
A
A
A
A
°C
°C
storage temperature
junction temperature
aaa-015103
25
P
tot
(W)
20
2.8
4.0
2.2
1.9
a = 1.57
δ=1
15
10
5
0
0
5
10
15
20
25
I
F(AV)
(A)
0
0
5
10
I
F(AV)
(A)
15
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.135 V; R
s
= 0.017 Ω
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 1.135 V; R
s
= 0.017 Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV415K-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
24 December 2014
3 / 11
NXP Semiconductors
BYV415K-600P
Dual ultrafast power diode
20
I
F(AV)
(A)
15
aaa-015108
10
4
I
FSM
(A)
10
3
aaa-015109
126 °C
10
10
2
5
t
t
p
T
j(init)
= 25 °C max
I
F
I
FSM
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
BYV415K-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
24 December 2014
4 / 11
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