BCP54...-BCP56...
NPN Silicon AF Transistors
•
For AF driver and output stages
•
High collector current
•
Low collector-emitter saturation voltage
•
Complementary types: BCP51...BCP53 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
Type
BCP54
BCP54-16
BCP55
BCP55-16
BCP56-10
BCP56-16
Marking
*
*
*
*
*
*
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
4=C
4=C
4=C
4=C
4=C
4=C
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
* Marking is the same as the type-name
1
2011-10-13
BCP54...-BCP56...
Maximum Ratings
Parameter
Collector-emitter voltage
BCP54
BCP55
BCP56
Collector-base voltage
BCP54
BCP55
BCP56
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
120°C
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
CBO
45
60
100
5
1
1.5
100
200
2
W
mA
A
Symbol
V
CEO
45
60
80
Value
Unit
V
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
15
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-10-13
BCP54...-BCP56...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BCP54...
I
C
= 10 mA,
I
B
= 0 , BCP55...
I
C
= 10 mA,
I
B
= 0 , BCP56-10, -16
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCP54...
I
C
= 100 µA,
I
E
= 0 , BCP55...
I
C
= 100 µA,
I
E
= 0 , BCP56-10, -16
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V, BCP54/BCP55
I
C
= 150 mA,
V
CE
= 2 V, BCP56-10
I
C
= 150 mA,
V
CE
= 2 V, BCP54-16...BCP56-16
I
C
= 500 mA,
V
CE
= 2 V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter voltage
1)
I
C
= 500 mA,
V
CE
= 2 V
V
BE(ON)
-
-
1
V
CEsat
h
FE
25
40
63
100
25
-
-
-
100
160
-
-
-
250
160
250
-
0.5
V
I
CBO
-
-
-
-
0.1
20
-
µA
V
(BR)EBO
V
(BR)CBO
45
60
100
5
-
-
-
-
-
-
-
-
45
60
80
-
-
-
-
-
-
Unit
V
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
1
Pulse
f
T
-
100
-
MHz
test: t < 300µs; D < 2%
3
2011-10-13
BCP54...-BCP56...
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 2 V
10
3
h
FE
5
BCP 54...56
EHP00268
Collector-emitter saturation voltage
I
C
=
ƒ(V
CEsat
),
h
FE
= 10
BCP 54...56
EHP00271
10
4
Ι
C
100 C
25 C
-50 C
mA
10
3
10
2
5
10
2
100 C
25 C
-50 C
10
1
5
10
1
10
0 0
10
10
0
10
1
10
2
10
3
mA 10
4
Ι
C
0
0.2
0.4
0.6
V
V
CEsat
0.8
Base-emitter saturation voltage
I
C
=
ƒ(V
BEsat
),
h
FE
= 10
BCP 54...56
EHP00270
Collector cutoff current
I
CBO
=
ƒ(T
A
)
V
CBO
= 30 V
BCP 54...56
EHP00269
10
4
10
4
Ι
C
mA
10
3
100 C
25 C
-50 C
Ι
CBO
nA
10
3
max
10
2
10
2
10
1
10
1
10
0
typ
10
0
0
0.2
0.4
0.6
0.8
V
V
BEsat
1.2
10
-1
0
50
100
C
T
A
150
4
2011-10-13
BCP54...-BCP56...
Transition frequency
f
T
=
ƒ(I
C
)
V
CE
= 10 V
10
3
f
T
MHz
5
W
BCP 54...56
EHP00267
Total power dissipation
P
tot
=
ƒ(T
S
)
2.4
10
2
P
tot
1.6
1.2
5
0.8
0.4
10
1
10
0
5 10
1
5 10
2
mA
10
3
0
0
15
30
45
60
75
90 105 120
°C
150
Ι
C
T
S
Permissible Pulse Load
R
thJS
=
ƒ(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ(t
p
)
10
2
10
3
P
totmax
/P
totDC
-
10
1
10
2
10
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
2011-10-13
微控制器 MCU
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