IRF1324S-7PPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
24V
0.8m
1.0m
429A
240A
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
G
Gate
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
D
2
Pak 7 Pin
D
Drain
S
Source
Base Part Number
IRF1324S-7PPbF
Package Type
D
2
Pak 7 Pin
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Max.
429
303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300
Units
A
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
230
See Fig.14,15, 18a, 18b
mJ
A
mJ
Thermal Resistance
Symbol
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-15
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Forward Trans conductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
24
–––
–––
2.0
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.80
–––
–––
–––
–––
–––
3.0
–––
180
47
58
122
19
240
86
93
7700
3380
1930
4780
4970
–––
1.0
4.0
20
250
200
-200
–––
–––
252
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
0.023 –––
IRF1324S-7PPbF
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 160A
V
µA
nA
S
nC
V
DS
= 15V, I
D
= 160A
I
D
= 75A
V
DS
= 12V
V
GS
= 10V
V
DS
= V
GS
, I
D
= 250µA
V
DS
=24V, V
GS
= 0V
V
DS
=19V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
DD
= 16V
I
D
= 160A
ns
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 19V
pF
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 19V
V
GS
= 0V, V
DS
= 0V to 19V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 160A,V
GS
= 0V
T
J
= 25°C
V
DD
= 20V
ns
T
J
= 125°C
I
F
= 160A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Notes:
Typ. Max. Units
––– 429
–––
–––
71
74
83
92
2.0
1640
1.3
107
110
120
140
–––
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.018mH, R
G
= 25, I
AS
= 160A, V
GS
=10V. Part not recommended for use above
this value.
I
SD
160A,
di/dt
600A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2015-10-15
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
IRF1324S-7PPbF
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
100
4.5V
4.5V
10
0.1
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
10
100
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
1000
Fig. 2
Typical Output Characteristics
1.8
ID = 160A
1.6
1.4
1.2
1.0
0.8
0.6
9
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
1
VDS = 15V
60µs
PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + Cgd, C ds SHORTED
C rss = Cgd
C oss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
12.0
ID= 75A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
0
50
C, Capacitance (pF)
VDS = 19V
VDS = 12V
10000
C iss
Coss
Crss
1000
1
10
VDS , Drain-to-Source Voltage (V)
100
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-15
1000
10000
IRF1324S-7PPbF
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
T J = 175°C
100
ID, Drain-to-Source Current (A)
1000
1msec
100µsec
100
10msec
T J = 25°C
10
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
DC
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
10
100
VDS , Drain-to-Source Voltage (V)
450
400
350
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Limited By Package
Fig 8.
Maximum Safe Operating Area
32
Id = 5mA
31
30
29
28
27
26
25
24
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
300
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
1.4
1.2
1.0
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1000
EAS , Single Pulse Avalanche Energy (mJ)
900
800
700
600
500
400
300
200
100
0
25
50
75
100
ID
TOP
45A
80A
BOTTOM 160A
0.8
0.6
0.4
0.2
0.0
-5
0
5
10
15
20
25
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-10-15
IRF1324S-7PPbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
4
C
Ri (°C/W)
0.02070
0.08624
0.24491
0.15005
I
(sec)
0.000010
0.000070
0.001406
0.009080
1
2
3
4
Ci=
iRi
Ci=
iRi
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.05
0.10
10
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j
= 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
5
2015-10-15
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