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HGTG40N60A4
Data Sheet
August 2003
File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25
o
C and 150
o
C. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49347.
Features
• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at T
J
= 125
o
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
HGTG40N60A4
PACKAGE
TO-247
BRAND
40N60A4
COLLECTOR
(BACK METAL)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
75
63
300
±20
±30
200A at 600V
625
5
-55 to 150
260
W
W/
o
C
o
C
o
C
UNITS
V
A
A
A
V
V
600
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
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