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ALD110814SCL: 产品描述MOSFET Quad EPAD(R) N-Ch; 产品类别半导体分立半导体; 文件大小101KB，共12页; 制造商Linear ( ADI ); 官网地址http://www.analog.com/cn/index.html

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MOSFET Quad EPAD(R) N-Ch

参数名称	属性值
产品种类 Product Category	MOSFET
制造商 Manufacturer	Linear ( ADI )
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOIC-16
Number of Channels	4 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	10 V
Id - Continuous Drain Current	12 mA
Rds On - Drain-Source Resistance	500 Ohms
Vgs th - Gate-Source Threshold Voltage	1.38 V
Vgs - Gate-Source Voltage	10.6 V
最小工作温度 Minimum Operating Temperature	0 C
最大工作温度 Maximum Operating Temperature	+ 70 C
Configuration	4 N-Channel
Channel Mode	Enhancement
系列 Packaging	Tube
Pd-功率耗散 Pd - Power Dissipation	500 mW (1/2 W)
产品 Product	MOSFET Small Signal
工厂包装数量 Factory Pack Quantity	48
Transistor Type	4 N-Channel
类型 Type	MOSFET
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	10 ns
单位重量 Unit Weight	0.023492 oz

	ALD110814SCL	ALD110814PCL
描述	MOSFET Quad EPAD(R) N-Ch	MOSFET Quad EPAD(R) N-Ch
产品种类 Product Category	MOSFET	MOSFET
制造商 Manufacturer	Linear ( ADI )	Linear ( ADI )
RoHS	Details	Details
技术 Technology	Si	Si
安装风格 Mounting Style	SMD/SMT	Through Hole
封装 / 箱体 Package / Case	SOIC-16	PDIP-16
Number of Channels	4 Channel	4 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	10 V	10 V
Id - Continuous Drain Current	12 mA	12 mA
Rds On - Drain-Source Resistance	500 Ohms	500 Ohms
Vgs - Gate-Source Voltage	10.6 V	10.6 V
最小工作温度 Minimum Operating Temperature	0 C	0 C
最大工作温度 Maximum Operating Temperature	+ 70 C	+ 70 C
Configuration	4 N-Channel	Quad
Channel Mode	Enhancement	Depletion
系列 Packaging	Tube	Tube
Pd-功率耗散 Pd - Power Dissipation	500 mW (1/2 W)	500 mW (1/2 W)
产品 Product	MOSFET Small Signal	MOSFET Small Signal
工厂包装数量 Factory Pack Quantity	48	25
Transistor Type	4 N-Channel	4 N-Channel
类型 Type	MOSFET	MOSFET
Typical Turn-Off Delay Time	10 ns	10 ns
Typical Turn-On Delay Time	10 ns	10 ns
单位重量 Unit Weight	0.023492 oz	0.036156 oz

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