PTFA210601E
PTFA210601F
Thermally-Enhanced High Power RF LDMOS FETs
60 W, 2110 – 2170 MHz
Description
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA210601E
Package H-36265-2
PTFA210601F
Package H-37265-2
2-Carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 550 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-25
35
Features
•
•
•
Drain Efficiency (%)
Thermally-enhanced packages,
Pb-free and
RoHS-compliant
Broadband internal matching
Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 12 W
- Linear Gain = 16 dB
- Efficiency = 27.0%
- Intermodulation distortion = –38 dBc
- Adjacent channel power = –44 dBc
Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 68 W
- Efficiency = 58.5%
Integrated ESD protection: Human Body Model,
Class
2
(minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
IM3 (dBc), ACPR (dBc)
-30
-35
Efficiency
30
25
IM3
-40
-45
-50
-55
31
33
35
37
39
41
43
20
15
•
ACPR
10
5
•
•
•
Average Output Power (dBm)
RF Characteristics
WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 12 W average
ƒ
1
= 2135 MHz, ƒ
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15.0
26.0
—
Typ
16.0
27.0
–38
Max
—
—
–37
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. 03, 2007-11-19
PTFA210601E
PTFA210601F
RF Characteristics
(cont.)
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 60 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
16
42
–28
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.15
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 550 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 60 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
196
1.12
–40 to +150
0.89
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA210601E
PTFA210601F
V4
V4
Package Type
H-36265-2
H-37265-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA210601E
PTFA210601F
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 03, 2007-11-19
PTFA210601E
PTFA210601F
Typical Performance
(data taken in a production test fixture)
Broadband Performance
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 41 dBm
2-Tone Drive-up
V
DD
= 28 V, I
DQ
= 550 mA,
f = 2140 MHz, tone spacing = 1 MHz
Intermodulation Distortion (dBc)
-5
-25
-30
-35
-40
-45
-50
-55
-60
-65
35
37
39
41
43
45
47
49
45
40
Gain (dB), Efficiency (%)
30
25
20
15
-15
-20
-25
-30
IM3
IM5
35
30
25
20
Efficiency
IM7
15
10
5
Gain
10
-35
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Output Power, PEP (dBm)
Two-carrier WCDMA at Selected Biases
V
DD
= 28 V, f = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-30
17
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 550 mA, f = 2170 MHz
T
CASE
= 25°C
T
CASE
= 90°C
65
55
450 mA
3rd Order IMD (dBc)
-35
-40
-45
-50
-55
31
33
35
37
39
41
43
16
Gain (dB)
650 mA
500 mA
15
14
13
Gain
45
35
25
600 mA
550 mA
Efficiency
12
0
10
20
30
40
50
60
70
15
Output Power, PEP (dBm)
Output Power (W)
Data Sheet
3 of 10
Rev. 03, 2007-11-19
Drain Efficiency (%)
Drain Efficiency (%)
Return Loss
Input Return Loss (dB)
35
-10
Efficiency
40
PTFA210601E
PTFA210601F
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 550 mA, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
Adjacent Channel Power Ratio (dB)
-25
-30
-35
-40
-45
-50
35
30
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I
DQ
= 550 m A, f = 2140 MHz, P
OUT
(PEP) = 47.8 dBm ,
tone spacing = 1 MHz
-10
55
50
Drain Efficiency (%)
Efficiency
3rd Order Intermodulation
Distortion (dBc)
-15
-20
-25
-30
-35
Efficiency
45
40
35
25
20
IM3 Up
30
25
ACPR Up
ACPR Low
15
10
5
Gain
-40
-45
23
24
25
26
27
28
29
30
31
32
33
20
15
10
-55
32
34
36
38
40
42
44
Average Output Power (dBm)
Supply Voltage (V)
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 550 mA, f = 2140 MHz,
P
OUT
= 47.8 dBm PEP
-20
1.03
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.56 A
1.11 A
1.67 A
2.22 A
2.78 A
3.33 A
3.89 A
4.44 A
0.98
0.97
0.96
-20
5.00 A
Intermodulation Distortion (dBc)
-25
-30
-35
3rd Order
Normalized Bias Voltage (V)
1.02
1.01
1.00
0.99
5th
-40
-45
-50
-55
0
5
10
15
20
25
30
35
40
7th
0
20
40
60
80
100
Tone Spacing (MHz)
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 03, 2007-11-19
Gain (dB), Drain Efficiency (%)
PTFA210601E
PTFA210601F
Broadband Circuit Impedance
R
--
->
Z
0
= 50
Ω
-
W
AV
E
LE
NGT
H
S T
OW
A
RD
G
E
NE
Z Source
Z Load
RA
T
O
D
G
S
2210 MHz
0.0
0.1
0.2
0.3
Frequency
MHz
2070
2110
2140
2170
2210
R
Z Source
Ω
jX
–5.79
–6.02
–5.95
–5.91
–5.72
10.29
9.46
8.79
8.14
7.19
Z Load
Ω
R
4.91
4.83
4.85
4.76
4.66
jX
1.57
1.75
2.12
2.38
2.55
W
ARD
LOA
D
-
T HS
T
O
L ENG
Z Source
0.1
2210 MHz
2070 MHz
WA
<---
VE
0.
2
See next page for reference circuit information
Data Sheet
5 of 10
Rev. 03, 2007-11-19
0.4
0.2
0. 1
Z Load
2070 MHz
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