Freescale Semiconductor
Technical Data
Document Number: MRFE6VP6600N
Rev. 0, 5/2015
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace, and mobile radio applications. Their
unmatched input and output design allows for wide frequency range use from
1.8 to 600 MHz.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
87.5–108
(1,3)
230
(2)
Signal Type
CW
Pulse
(100
sec,
20% Duty Cycle)
P
out
(W)
600 CW
600 Peak
G
ps
(dB)
24.0
24.7
D
(%)
81.8
73.5
OM-
-780-
-4L
PLASTIC
MRFE6VP6600N
Result
No Device
Degradation
MRFE6VP6600N
MRFE6VP6600GN
1.8–600 MHz, 600 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Load Mismatch/Ruggedness
Frequency
(MHz)
230
(2)
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
4.0 Peak
(3 dB
Overdrive)
Test
Voltage
50
1. Measured in 87.5–108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband production test circuit.
3. The values shown are the center band performance numbers across the indicated
frequency range.
OM-
-780G-
-4L
PLASTIC
MRFE6VP6600GN
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified up to a Maximum of 50 V
DD
Operation
Characterized from 30 to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
Typical Applications
Broadcast
– FM broadcast
– HF and VHF broadcast
Industrial, Scientific, Medical (ISM)
– CO
2
laser generation
– Plasma etching
– Particle accelerators (synchrotrons)
– MRI
– Industrial heating/welding
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Aerospace
– VHF omnidirectional range (VOR)
– Weather radar
Mobile Radio
– HF and VHF communications
– PMR base stations
Freescale Semiconductor, Inc., 2015. All rights reserved.
MRFE6VP6600N MRFE6VP6600GN
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Symbol
Z
JC
Value
–0.5, +133
–6.0, +10
– 65 to +150
–40 to +150
–40 to +225
Value
(2,3)
0.033
Unit
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Pulse: Case Temperature 78C, 600 W Pulse, 100
sec
Pulse Width, 20% Duty Cycle,
I
DQ
(A+B)
= 100 mA, 230 MHz
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
Class 2, passes 2500 V
Class B, passes 200 V
Class IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 888
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(4)
(V
DS
= 10 Vdc, I
D
= 30 Adc)
1.
2.
3.
4.
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.7
2.0
—
—
2.2
2.6
0.2
28.0
2.7
3.0
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
133
—
—
—
—
—
—
1
—
10
20
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.freescale.com/rf/calculators.
AN1955 –
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.freescale.com/rf
and search AN1955.
Each side of device measured separately.
(continued)
MRFE6VP6600N MRFE6VP6600GN
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
2.4
98
290
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Production Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
(A+B)
= 100 mA, P
out
= 600 W Peak
(120 W Avg.), f = 230 MHz, 100
sec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
23.3
70
—
24.7
73.5
–15
26.6
—
–9
dB
%
dB
Table 6. Load Mismatch/Ruggedness
(In Freescale Production Test Fixture, 50 ohm system) I
DQ
(A+B)
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
4.0 Peak
(3 dB Overdrive)
Test Voltage, V
DD
50
Result
No Device Degradation
Table 7. Ordering Information
Device
MRFE6VP6600NR3
MRFE6VP6600GNR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
OM--780--4L
OM--780G--4L
Package
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MRFE6VP6600N MRFE6VP6600GN
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
10000
Measured with
30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
C
iss
100
C
oss
10
C
rss
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
NORMALIZED V
GS(Q)
1.06
1.05 500 mA
1.04
1500 mA
1.03
2000 mA
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
–50
I
DQ(A+B)
= 100 mA
V
DD
= 50 Vdc
C, CAPACITANCE (pF)
1000
–25
0
25
50
75
100
T
C
, CASE TEMPERATURE (C)
I
DQ
(mA)
100
500
1500
2000
Slope (mV/C)
–2.554
–2.254
–1.973
–1.573
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
MRFE6VP6600N MRFE6VP6600GN
4
RF Device Data
Freescale Semiconductor, Inc.
87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 4.73
2.88 (12.0 cm
7.32 cm)
Table 8. 87.5–108 MHz Broadband Performance
(In Freescale Reference Circuit, 50 ohm system)
V
DD
= 50 Vdc, I
DQ(A+B)
= 150 mA, P
in
= 3 W, CW
Frequency
(MHz)
87.5
98
108
G
ps
(dB)
23.8
24.0
23.5
D
(%)
82.4
81.8
80.9
P
out
(W)
722
746
679
MRFE6VP6600N MRFE6VP6600GN
RF Device Data
Freescale Semiconductor, Inc.
5
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