1N5415 thru 1N5420
VOIDLESS HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category
1”
metallurgical bond. These devices are also available in surface mount MELF
package configurations. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Popular JEDEC registered 1N5415 thru 1N5420 series.
Voidless hermetically sealed glass package.
Quadruple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Working Peak Reverse Voltage 50 to 600 volts.
JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5415US – 1N5420US
APPLICATIONS / BENEFITS
Fast recovery 3 amp 50 to 600 volt rectifiers.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Forward Surge Current @ 8.3 ms half-sine
(4)
o
Average Rectified Forward Current
@ T
A
= +55 C
@ T
A
= +100
o
C
Working Peak Reverse Voltage
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
(5)
Maximum Reverse Recovery Time
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
Solder Temperature @ 10 s
See notes on next page.
Symbol
T
J
and T
STG
R
ӨJL
I
FSM
(2, 3)
I
O
(3)
I
O
V
RWM
Value
-65 to +175
22
80
3
2
50
100
200
400
500
600
150
150
150
150
250
400
260
Unit
o
C
C/W
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
V
t
rr
ns
T
SP
o
C
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 1 of 5
1N5415 thru 1N5420
MAXIMUM RATINGS
Notes:
1.
2.
3.
4.
At 3/8 inch (10 mm) lead length from body.
o
o
o
Derate linearly at 22 mA/ C for 55 C < T
A
< 100 C.
Above T
A
= 100
o
C, derate linearly at 26.7 mA/
o
C to zero at T
A
= 175
o
C.
These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T
J(max)
o
does not exceed 175 C.
5. I
F
= 0.5 A, I
RM
= 1 A, I
R(REC)
= 0.250 A.
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin is available for commercial grade only.
MARKING: Body paint and part number.
POLARITY: Cathode band.
TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.
WEIGHT: 750 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N5415
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
V
BR
V
RWM
I
O
V
F
I
R
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B).
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 2 of 5
1N5415 thru 1N5420
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLTAGE
TYPE
V
BR
@ 50
µA
Volts
55
110
220
440
550
660
MIN.
Volts
0.6
0.6
0.6
0.6
0.6
0.6
MAX.
Volts
1.5
1.5
1.5
1.5
1.5
1.5
25
o
C
µA
1.0
1.0
1.0
1.0
1.0
1.0
100
o
C
µA
20
20
20
20
20
20
pF
550
430
250
165
140
120
FORWARD
VOLTAGE
V
F
@ 9 A
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
CAPACITANCE
C
V
R
@ 4 V
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
NOTE 1:
I
F
= 0.5 A, I
RM
= 1 A, I
R(REC)
= 0.250 A.
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 3 of 5
1N5415 thru 1N5420
GRAPHS
I
F
– Current (µA)
Z
ӨJX
(
o
C
/Watt)
% PIV
FIGURE 1
Typical Reverse Current vs. PIV
t
H
Heating Time (seconds)
FIGURE 2
Maximum Thermal Impedance
I
F
– Current (A)
V
F
– Voltage (V)
FIGURE 3
Typical Forward Current vs. Forward Voltage
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 4 of 5
1N5415 thru 1N5420
PACKAGE DIMENSIONS
Symbol
BD
LD
BL
LL
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.110 0.180 2.79
4.57
0.036 0.042 0.91
1.07
0.130 0.260 3.30
6.60
0.90 1.30
22.9
33.0
Notes
3
4
4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. The BL dimension shall include the entire body including slugs and sections of the lead over which the diameter is
uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending
.050 inch (1.27 mm) onto the leads.
5. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 5 of 5
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