VS-UFB310CB40
www.vishay.com
Vishay Semiconductors
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 310 A
FEATURES
• Not insulated package
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Optimized for power conversion: welding and
industrial SMPS applications
• Plug-in compatible with other SOT-227 packages
SOT-227
• Easy to assemble
• Direct mounting to heatsink
• Designed and qualified for industrial level
4
Anode
1
2
3
Anode
• UL approved file E78996
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Base common cathode
PRIMARY CHARACTERISTICS
V
R
I
F(AV)
at T
C
= 119 °C per module
(1)
t
rr
at T
C
Type
Package
Note
(1)
All 4 anode terminals connected
400 V
310 A
39 ns
135 °C
Modules - Diode, FRED Pt
®
SOT-227
The VS-UFB310CB40 not insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure of
the diodes, and the platinum doping life time control,
provide a ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
Operating junction and storage temperatures
SYMBOL
V
R
I
F (1)
I
FSM (2)
P
D
T
J
, T
Stg
T
C
= 135 °C
T
C
= 25 °C
T
C
= 135 °C
TEST CONDITIONS
MAX.
400
155
1300
421
-55 to +175
UNITS
V
A
W
°C
Notes
(1)
Both anode terminals connected;
Maximum I
RMS
current per leg 200 A to do not exceed the maximum temperature of terminals
(2)
10 ms sine or 6 ms rectangular pulse
Revision: 27-Sep-17
Document Number: 93608
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB310CB40
www.vishay.com
Vishay Semiconductors
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 100 A
I
F
= 100 A, T
J
= 125 °C
I
F
= 100 A, T
J
= 175 °C
I
F
= 200 A
I
F
= 200 A, T
J
= 125 °C
I
F
= 200 A, T
J
= 175 °C
V
R
= V
R
rated
MIN.
400
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.11
0.99
0.97
1.3
1.22
1.25
1.3
100
1
100
MAX.
-
1.34
1.1
-
1.6
1.4
-
50
-
4
-
μA
mA
pF
V
UNITS
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage, per leg
V
FM
Reverse leakage current, per leg
I
RM
C
T
V
R
= V
R
rated, T
J
= 125 °C
V
R
= V
R
rated, T
J
= 175 °C
V
R
= 400 V
Junction capacitance, per leg
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 400 A/μs, V
R
= 30 V
Reverse recovery time, per leg
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current, per leg
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
39
89
184
9
20
400
1840
MAX.
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge, per leg
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
Weight
Mounting torque
Case style
Torque to terminal
Torque to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-55
-
-
-
-
-
-
TYP.
-
-
-
0.07
30
-
-
MAX.
175
0.19
0.095
-
-
1.1 (9.7)
1.8 (15.9)
g
Nm (lbf.in)
Nm (lbf.in)
°C/W
UNITS
°C
SOT-227 not insulated
Revision: 27-Sep-17
Document Number: 93608
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB310CB40
www.vishay.com
Vishay Semiconductors
10 000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (µA)
1000
100
T
J
= 175 °C
100
T
J
= 125 °C
10
1
T
J
= 25 °C
0.1
0.01
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
0
50
100
150
200
250
300
350
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics,
Per Leg
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage,
Per Leg
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage,
Per Leg
1
Z
thJC
- Thermal Impedance (°C/W)
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.01
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics, Per Leg
Revision: 27-Sep-17
Document Number: 93608
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB310CB40
www.vishay.com
Vishay Semiconductors
250
230
210
190
T
J
= 125 °C
V
R
= 200 V
I
F
= 50 A
180
Allowable Case Temperature (°C)
160
140
120
100
80
60
40
20
See
note (1)
0
0
40
80 120 160
200
240 280 320 360 400
Square
Wave (d = 0.5)
80 % Rated V
R
applied
DC
t
rr
(ns)
170
150
130
110
90
70
50
100
1000
T
J
= 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current, Per Leg
400
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt,
Per Leg
4000
3500
3000
V
R
= 200 V
I
F
= 50 A
T
J
= 125 °C
Average Power Loss (W)
350
300
200
150
100
DC
50
0
0
40
80
120
160
Q
rr
(nC)
250
Limite RMS
D=0.20
D=0.25
D=0.33
D=0.50
D=0.75
2500
2000
1500
1000
500
0
100
T
J
= 25 °C
200
240
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics,
Per Leg
50
V
R
= 200 V
I
F
= 50 A
40
T
J
= 125 °C
dI
F
/dt (A/µs)
Fig. 8 - Typical Reverse Recovery Charge vs. dI
F
/dt,
Per Leg
I
rr
(A)
30
20
T
J
= 25 °C
10
0
100
1000
dI
F
/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Current vs. dI
F
/dt,
Per Leg
Revision: 27-Sep-17
Document Number: 93608
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB310CB40
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 27-Sep-17
Document Number: 93608
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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