NTP8G202N
Power GaN Cascode
Transistor 600 V, 290 mW
Features
•
•
•
•
Fast Switching
Extremely Low Q
rr
Transphorm Inside
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
600 V
R
DS(ON)
TYP
290 mW @ 10 V
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
Power Dissipation –
R
qJC
Pulsed Drain
Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
,
T
STG
T
L
Symbol
V
DSS
V
GS
I
D
NDD
600
±18
9.0
6.0
65
35
−55 to
+150
260
W
G (1)
A
S (2,4)
°C
°C
Unit
V
V
A
N−Channel MOSFET
D (3)
t
p
= 10
ms
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Leads
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Source
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Symbol
R
qJC
R
qJA
Value
2.3
62
Unit
°C/W
°C/W
1
2
TO−220
CASE 221A−09
STYLE 10
NTP8G202NG
AYWW
3
Drain
3
1
Gate
= Assembly Location
= Year
= Work Week
= Pb−Free Package
A
Y
WW
G
2
Source
ORDERING INFORMATION
Device
NTP8G202NG
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. 1
Publication Order Number:
NTP8G202N/D
NTP8G202N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Leakage Current
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
T
J
= 25°C
T
J
= 150°C
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Static Drain-to-Source On Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
related (Note 3)
Effective output capacitance, time
related (Note 4)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
(Note 2)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 480 V, I
D
= 5.5 A,
V
GS
= 10 V, R
G
= 2
W
6.2
4.5
9.7
5.0
ns
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
Q
g
Q
gs
Q
gd
V
DS
= 100 V, I
D
= 5.5 A, V
GS
= 4.5 V
V
GS
= 0 V, V
DS
= 0 to 480 V
I
D
= constant, V
GS
= 0 V,
V
DS
= 0 to 480 V
V
DS
= 400 V, V
GS
= 0 V, f = 1 MHz
760
26
3.5
36
57
6.2
2.1
2.2
9.3
nC
pF
V
GS(TH)
R
DS(on)
V
DS
= V
GS
, I
D
= 500
mA
V
GS
= 8 V, I
D
= 5.5 A
1.6
2.1
290
2.6
350
V
mW
I
GSS
V
GS
=
±18
V
600
2.5
8.0
±100
nA
90
V
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
I
S
= 5.5 A, V
GS
= 0 V
T
J
= 25°C
2.1
12
29
V
ns
nC
V
GS
= 0 V, V
DD
= 480 V
I
S
= 5.5 A, d
i
/d
t
= 1500 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperatures.
3. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
4. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
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2
NTP8G202N
TYPICAL CHARACTERISTICS
40
T
J
= 25°C
35
5V
30
25
I
DS
(A)
20
15
10
5
0
0
2
4
V
DS
(V)
6
8
3V
1V
10
0
0
2
4
V
DS
(V)
6
8
1V
10
3.5 V
5
4V
I
DS
(A)
10
3V
15
VGS = 8 V
20
T
J
= 175°C
VGS = 8 V
4V
3.5 V
Figure 1. Typical Output Characteristics
40
V
DS
= 10 V
35
30
I
DS
(A)
25
20
15
10
5
0
0
2
4
V
GS
(V)
6
8
10
0.0
0
T
J
= 175°C
T
J
= 25°C
2.5
NORMALIZED R
DS(on)
2.0
1.5
1.0
0.5
3.0
Figure 2. Typical Output Characteristics
I
D
= 12 A,
V
GS
= 10 V
25
50
75
100
T
J
(°C)
125
150
175
200
Figure 3. Typical Transfer Characteristics
1000
C
ISS
5
100
C
OSS
E
OSS
(mJ)
C (pF)
4
3
2
C
RSS
V
GS
= 0 V
f = 1 MHz
1
0
100
200
300
V
DS
(V)
400
500
600
1
0
6
Figure 4. Normalized On−Resistance
10
0
100
200
300
V
DS
(V)
400
500
600
Figure 5. Typical Capacitance
Figure 6. Typical C
OSS
Stored Eneergy
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3
NTP8G202N
TYPICAL CHARACTERISTICS
35
30
25
I
S
(A)
20
15
10
T
J
= 175°C
5
0
0
1
2
3
4
V
SD
(V)
5
6
7
8
0.1
1
10
V
SD
(V)
100
1000
0.1
I
S
= f(V
SD
)
25°C
50°C
75°C
100°C
125°C
150°C
T
C
= 25°C
10
DC
Id
S
(A)
5 ms
1
1 ms
100
ms
10
ms
Figure 7. Forward Characteristics of Rev.
Diode
2.5
T
C
= 80°C
2.0
10
Id
S
(A)
DC
5 ms
1
1 ms
100
ms
10
ms
0.1
0.1
1
10
V
SD
(V)
100
1000
0.5
Z
th
(°C/W)
1.5
D = 50%
1.0
D = 20%
Figure 8. Safe Operating Area
D = 10%
Single Pulse
0
0.00001 0.0001 0.001
0.01
V
SD
(V)
0.1
1
10
Figure 9. Safe Operating Area
Figure 10. Transient Thermal Resistance
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4
NTP8G202N
SiC Diode
V
DS
90%
V
GS
10%
t
r
t
d(on)
t
d(off)
t
f
t
off
t
on
Figure 11. Switching Time Test Circuit
Figure 12. Switching Time Waveform
i, V
di
F
/dt
I
F
t
S
t
rr
t
F
10% I
RRM
I
RRM
Q
S
Q
F
di
rr
/dt
90% I
RRM
V
RRM
t
t
rr
= t
S +
t
F
Q
rr
= Q
S +
Q
Figure 13. Test Circuit for Reverse Diode
Characteristics
Figure 14. Diode Recovery Waveform
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