* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71748
S-80274-Rev. B, 11-Feb-08
www.vishay.com
1
PCB Mount
d
Symbol
R
thJA
R
thJC
Limit
40
0.75
Unit
°C/W
SUM60P05-11LT
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
DS
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 44 V, V
GS
= 0 V
V
DS
= - 44 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 125 °C
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 175 °C
V
GS
= - 4.5 V, I
D
= - 20 A
Sense Diode Forward Voltage
Sense Diode Forward Voltage Increase
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= - 60 A, di/dt = 100 A/µs
I
F
= - 60 A, V
GS
= 0 V
- 1.1
55
- 1.6
0.04
V
DD
= - 30 V, R
L
= 0.6
Ω
I
D
≅
- 60 A, V
GEN
= - 10 V, R
G
= 2.5
Ω
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 60 A
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
6450
1050
520
107
28
22
15
190
145
265
25
325
220
450
- 60
- 200
- 1.5
110
- 2.0
12
ns
nC
pF
V
FD
ΔV
F
g
fs
V
DS
= - 25 V, I
F
= - 250 µA
From I
F
= - 125 µA to I
F
= - 250 µA
V
DS
= - 25 V, I
D
= - 30 A
- 770
- 25
50
- 120
0.009
0.011
0.0175
0.022
0.0175
- 830
- 55
mV
S
Ω
- 55
-1
± 100
-1
- 250
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
