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CY6264-55SNXIT

产品描述SRAM 64Kb 5V 55ns 8K x 8 SRAM
产品类别存储   
文件大小1MB,共16页
制造商Cypress(赛普拉斯)
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CY6264-55SNXIT概述

SRAM 64Kb 5V 55ns 8K x 8 SRAM

CY6264-55SNXIT规格参数

参数名称属性值
产品种类
Product Category
SRAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
Memory Size64 kbit
Organization8 k x 8
Access Time55 ns
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
5.5 V
电源电压-最小
Supply Voltage - Min
4.5 V
Supply Current - Max200 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOIC-28
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
数据速率
Data Rate
SDR
Memory TypeSDR
Moisture SensitiveYes
Number of Ports1
工作温度范围
Operating Temperature Range
- 40 C to + 85 C
工厂包装数量
Factory Pack Quantity
1000
类型
Type
Asynchronous
单位重量
Unit Weight
0.078125 oz

文档预览

下载PDF文档
CY6264
8K × 8 Static RAM
8K × 8 Static RAM
Features
Functional Description
The CY6264 is a high-performance CMOS static RAM organized
as 8192 words by 8 bits. Easy memory expansion is provided by
an active LOW chip enable (CE
1
), an active HIGH chip enable
(CE
2
), and active LOW output enable (OE) and three-state
drivers. Both devices have an automatic power-down feature
(CE
1
), reducing the power consumption by over 70% when
deselected. The CY6264 is packaged in a 450-mil (300-mil body)
SOIC.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE
1
and WE
inputs are both LOW and CE
2
is HIGH, data on the eight data
input/output pins (I/O
0
through I/O
7
) is written into the memory
location addressed by the address present on the address pins
(A
0
through A
12
). Reading the device is accomplished by
selecting the device and enabling the outputs, CE
1
and OE
active LOW, CE
2
active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location
addressed by the information on address pins is present on the
eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH. A die coat is used to ensure alpha immunity.
For a complete list of related documentation, click
here.
Temperature ranges:
Commercial: 0 °C to 70 °C
Industrial: –40 °C to 85 °C
Automotive-A: –40 °C to 85 °C
High speed
55 ns
CMOS for optimum speed/power
Easy memory expansion with CE
1
, CE
2
and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Available in Pb-free 28-pin SNC package
Logic Block Diagram
Cypress Semiconductor Corporation
Document Number: 001-02367 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised October 17, 2016

CY6264-55SNXIT相似产品对比

CY6264-55SNXIT CY6264-70SNXCT
描述 SRAM 64Kb 5V 55ns 8K x 8 SRAM SRAM 64Kb 5V 70ns 8K x 8 SRAM
产品种类
Product Category
SRAM SRAM
制造商
Manufacturer
Cypress(赛普拉斯) Cypress(赛普拉斯)
RoHS Details Details
Memory Size 64 kbit 64 kbit
Organization 8 k x 8 8 k x 8
Access Time 55 ns 70 ns
接口类型
Interface Type
Parallel Parallel
电源电压-最大
Supply Voltage - Max
5.5 V 5.5 V
电源电压-最小
Supply Voltage - Min
4.5 V 4.5 V
Supply Current - Max 200 mA 100 mA
最小工作温度
Minimum Operating Temperature
- 40 C 0 C
最大工作温度
Maximum Operating Temperature
+ 85 C + 70 C
安装风格
Mounting Style
SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
SOIC-28 SOIC-28
系列
Packaging
Reel Reel
数据速率
Data Rate
SDR SDR
Memory Type SDR SDR
Moisture Sensitive Yes Yes
Number of Ports 1 1
工作温度范围
Operating Temperature Range
- 40 C to + 85 C 0 C to + 70 C
工厂包装数量
Factory Pack Quantity
1000 1000
类型
Type
Asynchronous Asynchronous
单位重量
Unit Weight
0.078125 oz 0.078125 oz

 
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