Ordering number :EN5849
P-Channel Silicon MOS FET
FW115
S/W Load Applications
Features
· 4V drive.
· Low ON resistance.
Package Dimensions
unit:mm
2129
[FW115]
8
5
0.3
5.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
0.595
1.27
0.43
0.1
1.5
1.8max
1
4
0.2
1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
4.4
Conditions
Ratings
–30
±20
–3
6.0
Unit
V
V
A
A
W
W
˚C
˚C
PW
≤
10µs, duty cycle
≤
1%
Mounted on ceramic board
Mounted on ceramic board
(1200mm
2
×0.8mm)
(1200mm
2
×0.8mm)
1unit
–32
1.7
2.0
150
–55 to +150
Electrical Characteristics
at Ta = 25˚C
Parameter
D-S Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Current
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–3A
ID=–3A, VGS=–10V
ID=–1A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–3A
VDS=–10V, VGS=–10V, ID=–3A
VDS=–10V, VGS=–10V, ID=–3A
IS=–3A, VGS=0
–1.0
3
5
65
135
470
280
140
10
30
60
45
15
3
4
–1.0
–1.5
85
190
Conditions
Ratings
min
–30
–100
±10
–2.5
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52698TS (KOTO) TA-1218 No.5849-1/3
FW115
Switching Time Test Circuit
0V
–10V
VIN
VIN
PW=10µs
D.C.≤1%
D
VDD=–15V
ID= –3A
RL= 5Ω
VOUT
G
P.G
50Ω
S
.0V
– 8.
– 6.
0V
– 5
0V
.
– 4.
0V
5V
–4
.0V
-3.5
-3.0
A
I
D
- V
DS
–10
-6
I
D
- V
GS
V
DS
=-10V
–3
.5V
-5
A
-2.5
Drain Current, I
D
-
-2.0
-1.5
-1.0
-0.5
0
0
Drain Current, I
D
-
-4
V
GS
=–3.0V
-3
-1
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
Ta =
-3.0
-3.5
– 25
˚C
-2
25˚C
75˚C
-4.0
Drain-to-Source Voltage, V
DS
- V
10
7
V
DS
=–10V
5
3
2
Gate-to-Source Voltage, V
DS
- V
200
|
y
fs |
- I
D
C
25˚
Ta
5˚C
-2
=
R
DS(on)
- V
GS
Tc=25˚C
Forwaard Transfer Addmittance,|y
fs
| - S
Static Drain-to-Source
ON-State Resistance, R
DS (
on
)
– mΩ
160
C
75˚
1.0
7
5
3
2
0.1
7
5
3
2
0.01
-0.01
2
3
5 7 -0.1
2
3
5 7 -1.0
2
3
5 7 -10
120
80
I
D
=–3A
I
D
=–1A
40
0
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Drain Current, I
D
- A
200
Gate-to-Source Voltage,V
GS
- V
-10
7
V
GS
=0
5
R
DS(on)
- Tc
V
=–4
I
F
- V
SD
Static Drain-to-Source
ON-State Resistance, R
DS (
on
)
– mΩ
180
140
120
100
80
60
40
20
0
-60
-40
-20
0
20
40
I
D
=
Forward Current, I
F
- A
160
, V
GS
– 1A
3
2
-1.0
7
5
3
2
-0.1
7
5
3
2
, V
G
I
D
=-3A
S
=-
10V
5˚C
-0.2
-0.4
25˚C
60
80
100
120
140
-0.01
0
Ta =7
-0.6
–25˚C
-0.8
-1.0
-1.2
-1.4
Case Temperature, Tc - ˚C
Diode Forward Voltage, V
SD
– V
No.5849-2/3
FW115
10000
7
5
3
2
Ciss,Coss,Crss - V
DS
f=1MHz
-10
V
GS
- Qg
Gate-to-Source Voltage, V
GS
– V
-30
V
DS
=-10V
I
D
=-3A
-9
-8
-7
-6
-5
-4
-3
-2
Ciss,Coss,Crss - pF
1000
7
5
3
2
100
7
5
3
2
10
0
-5
-10
-15
-20
-25
Ciss
Coss
Crss
-1
0
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage,V
DS
– V
1000
7
5
Total Gate Charge, Qg – nC
-100
7
5
I
DP
= – 3 2 A
3
2
SW Time - I
D
V
DD
=–15V
V
GS
=–10V
A S O
10µs
10
0
µ
s
1m
10
s
ms
10
0m
s
Switching Time, SW Time – ns
100
7
5
3
2
10
7
5
3
2
1.0
7 -0.1
2
3
5
7 -1.0
Drain Current, I
D
- A
3
2
t d(off)
tf
tr
-10
7
5
3
2
-1.0
7
5
3
2
t d(on)
-0.1
7
Ta= 25˚C
5
1pulse
3
1unit
2
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
I
D
=3A
DC
op
er
at
io
Operation in this area is
limited by R
DS
(on).
n
Mounted on ceramic board (1200mm
2
×
0.8mm)
5 7 -0.1
2 3
5 7 -1.0
2 3
5 7 -10
2 3
5
2
3
5
7
-10
-0.01
-0.01 2 3
Drain Current, I
D
– A
2.0
Drain -to-Source Voltage, V
DS
- V
2.5
P
D(FET2)
-
M
P
D(FET1)
Allowable Dissipation, P
D –
W
P
D
-
Ta
Allowable Dissipation, P
D
(FET 2) – W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ou
nte
2.0
1.7
do
nc
era
m
ic
bo
ard
1.5
(1
To
00
tal
0m
m
×
2
0.8
Di
ss
1.0
mm
1u
ip
a
)
nit
tio
n
0.5
Mounted on ceramic board (1200mm
2
×
0.8mm)
0
0
20
40
60
80
100
120
140
160
Allowable Dissipation, P
D
(FET 1) – W
Ambient Temperature, Ta – ˚C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5849-3/3
Microchip MCU
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