Ordering number:ENN6389
N-Channel and P-Channel Silicon MOSFETs
FW313
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Composite type with a N-channel MOSFET and a P-
channel MOSFET driving from a 4V supply voltage
contained in a single package.
· High-density mounting.
Package Dimensions
unit:mm
2129
[FW313]
8
5
0.3
4.4
6.0
0.2
5.0
1.5
0.595
1.27
0.43
0.1
1.8max
1
4
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Conditions
Ratings
N-channel
30
±20
7
P-channel
–30
±20
–5
–20
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
PW
≤
10µs, duty cycle
≤
1%
Mounted on a ceramic board (1000mm
×0.8mm)
1unit
2
28
2
Mounted on a ceramic board (1000mm
×0.8mm)
Electrical Characteristics
at Ta = 25˚C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
ID=4A, VGS=4V
1.0
9
13
25
37
32
50
30
10
±10
2.4
V
µA
µA
V
S
mΩ
mΩ
Symbol
Conditions
Ratings
min
typ
max
Unit
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2373 No.6389-1/6
FW313
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–5A
ID=–5A, VGS=–10V
ID=–2A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–5A
VDS=–10V, VGS=–10V, ID=–5A
VDS=–10V, VGS=–10V, ID=–5A
IS=–5A, VGS=0
–1.0
5
8
42
85
820
470
230
15
150
85
90
25
5
7
–1.0
–1.5
53
120
–30
–10
±10
–2.5
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=7A
VDS=10V, VGS=10V, ID=7A
VDS=10V, VGS=10V, ID=7A
IS=7A, VGS=0
Conditions
Ratings
min
typ
700
380
180
15
180
90
80
22
5
6
0.85
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Marking : W313
Electrical Connection
D1
D1
D2
D2
S1
G1
S2
G2
(Top view)
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
ID=4A
RL=3.75Ω
Switching Time Test Circuit
[P-channel]
VDD=--15V
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
ID=--3A
RL=5Ω
D
G
VOUT
D
G
VOUT
P.G
50Ω
FW313
P.G
50Ω
FW313
S
S
No.6389-2/6
FW313
8
ID -- VDS
8.0V
6.0V
4.0
V
[Nch]
10
9
8
ID -- VGS
VDS=10V
[Nch]
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10.0V
3.5
V
Drain Current, I
D
– A
Drain Current, I
D
– A
3.0
V
7
Ta=75
°
C
0
0.5
1.0
1.5
2.0
2.5
2.5V
5
4
3
2
VGS=2.0V
0.8
0.9
1.0
1
0
3.0
3.5
IT00901
Drain-to-Source Voltage, V
DS
– V
100
90
IT00900
Gate-to-Source Voltage, V
GS
– V
70
RDS(on) -- VGS
[Nch]
Ta=25°C
RDS(on) -- Ta
--25
°
C
25
°
C
6
[Nch]
Static Drain-to-Source
On-State Resistance, R
DS
(on) – mΩ
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
9
10
ID=4A
7A
Static Drain-to-Source
On-State Resistance, R
DS
(on) – mΩ
60
50
40
30
=4V
, VGS
4A
I D=
10V
S=
7A, V G
I D=
20
10
0
--60
--40
--20
0
20
40
60
80
100
120
140 160
IT00903
Gate-to-Source Voltage, V
GS
– V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
y
fs -- ID
IT00902
Ambient Temperature, Ta – ˚C
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
[Nch]
VDS=10V
IF -- VSD
VGS = 0
[Nch]
Forward Transfer Admittance, | yfs | – S
C
25
°
C
5
°
-2
=-
Ta
Ta=7
5
°
C
75
°
C
Forward Current, I
F
– A
Drain Current, I
D
– A
5 7 100
IT00904
0
0.1
0.2
0.3
0.4
0.5
0.6
--25
°
C
0.7
0.8
25
°
C
0.9
1.0
Diode Forward Voltage, VSD – V
10000
7
5
3
2
IT00905
1000
7
5
SW Time -- ID
VDD=15V
VGS=10V
[Nch]
Ciss, Coss, Crss -- VDS
[Nch]
f=1MHz
Switching Time, SW Time – ns
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.1
2
3
5
7
2
3
5
7
Ciss, Coss, Crss – pF
td(off)
tf
tr
td(on)
1000
7
5
3
2
100
7
5
3
2
10
0
5
10
Ciss
Coss
Crss
Drain Current, I
D
– A
1.0
10
15
20
25
30
IT00907
IT00906
Drain-to-Source Voltage, V
DS
– V
No.6389-3/6
FW313
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
IT00908
VGS -- Qg
VDS=10V
ID=7A
[Nch]
100
7
5
3
2
ASO
IDP=28A
ID=7A
1
10
ms
ms
[Nch]
Gate-to-Source Voltage, V
GS
– V
10µs
100µs
Drain Current, I
D
– A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
DC
10
0m
s
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
1 unit
op
era
tio
n
Total Gate Charge, Qg – nC
--6
0.01
Mounted on a ceramic
2 3
5 7 1.0
0.1
board (1000mm
2
×0.8mm)
2
3
5 7 10
2
3
7 100
IT00909
5
Drain-to-Source Voltage, V
DS
– V
ID -- VDS
--8.0V
[Pch]
--10
ID -- VGS
VDS=--10V
[Pch]
--9
--8
--5
--6.0
V
0V
Drain Current, I
D
– A
Drain Current, I
D
– A
.0V
--4
--4
--10
.
--7
--6
--5
--4
--3
--2
--3
0
--3.
V
--2.5V
--1
Ta=
7
0
--0.5
--1.0
--1.5
--2.0
--2.5
--2
5
°
C
0
0
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
--0.7
VGS=--2.0V
--0.8
--0.9
--1.0
0
--2
5
--1
--3.0
25
°
C
--3.5
°
C
--4.0
Drain-to-Source Voltage, V
DS
– V
200
180
IT00910
Gate-to-Source Voltage, V
GS
– V
140
IT00911
RDS(on) -- VGS
[Pch]
Ta=25°C
Static Drain-to-Source
On-State Resistance, R
DS
(on) – mΩ
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, R
DS
(on) – mΩ
120
160
140
120
100
80
60
40
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
ID=--2A
--5A
100
80
--2
I D=
=--4
, VGS
A
V
60
=--10V
A, V GS
I D=--5
40
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, V
GS
– V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
--0.01 2 3
y
fs -- ID
IT00912
Ambient Temperature, Ta – ˚C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
IT00913
[Pch]
VDS=--10V
VGS = 0
IF -- VSD
[Pch]
Forward Transfer Admittance, | yfs | – S
Ta
5
°
C
--2
=
°
C
75
Forward Current, I
F
– A
C
25
°
Ta=75
°
C
25
°
C
0
--0.2
--0.4
--0.6
5 7 --0.1 2 3
5 7--1.0
2 3
5 7 --10
2 3
Drain Current, I
D
– A
5 7--100
IT00914
--25
°
C
--0.8
--1.0
--1.2
--1.4
Diode Forward Voltage, VSD – V
IT00915
No.6389-4/6
FW313
1000
7
SW Time -- ID
[Pch]
VDD=--15V
VGS=--10V
10000
7
5
3
2
Ciss, Coss, Crss -- VDS
[Pch]
f=1MHz
Switching Time, SW Time – ns
5
3
2
tr
tf
td(off)
Ciss, Coss, Crss – pF
1000
7
5
3
2
100
7
5
3
2
10
Ciss
Coss
Crss
100
7
5
3
2
td(on)
2
3
5
7
--1.0
2
3
5
7
--10
10
--0.1
0
--5
--10
--15
--20
--25
--30
IT00917
Drain Current, I
D
– A
--10
IT00916
Drain-to-Source Voltage, V
DS
– V
--100
7
5
3
2
VGS -- Qg
VDS=--10V
ID=--5A
[Pch]
ASO
IDP=--20A
ID=--5A
1
10
ms
ms
[Pch]
Gate-to-Source Voltage, V
GS
– V
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
100µs
Drain Current, I
D
– A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
10
DC
op
era
0m
s
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
1 unit
tio
n
5
10
15
20
25
IT00918
Total Gate Charge, Qg – nC
Allowable Power Dissipation (FET1), P
D
– W
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
--0.01
Mounted on a ceramic
2 3
5 7 --1.0
--0.1
board (1000mm
2
×0.8mm)
2
3
5 7 --10
2
3
5
7 --100
IT00919
Drain-to-Source Voltage, V
DS
– V
PD(FET 1) -- PD(FET 2)
M
ou
nte
do
[Nch, Pch]
2.5
PD -- Ta
[Nch, Pch]
Allowable Power Dissipation, P
D
– W
na
2.0
1.7
1.5
ce
ram
ic
bo
ard
(1
To
t
00
al
0m
Di
ss
m
2
×
0
.8
1.0
1u
ip
mm
)
nit
ati
on
1u
nit
0.5
0
1.8
2.0
Mounted on a ceramic board (1200mm
2
×0.8mm)
0
20
40
60
80
100
120
140
160
Allowable Power Dissipation (FET2), P
D
– W
IT00921
Ambient Temperature, Ta – ˚C
IT00920
No.6389-5/6
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