Ordering number:EN5909
P-Channel Silicon MOSFET
FW111
Load S/W Applications
Features
· 2.5V drive.
· Low ON resistance.
Package Dimensions
unit:mm
2129
8
5
[FW111]
0.3
4.4
6.0
0.2
5.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
0.595
1.27
0.43
0.1
1.5
1.8max
1
4
1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
Conditions
Ratings
–20
±10
–5
Unit
V
V
A
A
W
W
PW
≤
10µs, duty cycle
≤
1%
–32
1.7
2.0
150
–55 to +150
Mounted on a ceramic board (1000mm
2
×0.8mm)
1unit
Mounted on a ceramic board (1000mm
2
×0.8mm)
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=–1mA, VGS=0
VDS=–20V, VGS=0
VGS=±8V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–5A
ID=–5A, VGS=–4V
ID=–2A, VGS=–2.5V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
–0.4
8
12
44
65
980
500
210
58
98
Conditions
Ratings
min
–20
–100
±10
–1.4
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1498TS (KOTO) TA-1214 No.5909-1/4
FW111
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=–5A, VGS=0
VDS=–10V, VGS=–10V, ID=–5A
Conditions
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
Ratings
min
typ
20
115
110
105
30
5
7
–1.0
–1.5
max
Unit
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
0V
–4V
VIN
VDD=–10V
ID=–5A
RL=2Ω
VIN
PW=10µs
D.C.≤1%
D
VOUT
G
P.G
FW111
50Ω
S
-6
I
D
- V
DS
-6V
-4V
-3V
-2.
5V
-10
I
D
- V
GS
V
DS
= -10V
-9
-8
-5
Drain Current, I
D
– A
-8V
Drain Current, I
D
– A
-4
-7
-6
-5
-4
-3
V
-2
-3
-2
-1
0
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
0
0
-0.5
-1.0
-1.5
Ta
25
=-
˚C
25
-2.0
-1
˚C
V
GS
=-1.5V
75
-2
˚C
-2.5
Drain-to-Source Voltage,V
DS
– V
100
7
V
DS
= -10V
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
-0.01
2
3
5 7 -0.1
2 3
5 7 -1.0
Current, I
D
–
2 3
5 7 -10
2
Gate-to-Source Voltage, V
GS
– V
100
| y
f s
| - I
D
Static Drain-to-Source
On-State Resistance, R
DS (
on
)
– mΩ
R
DS(on)
- V
GS
T
a
=25˚C
I
D
= -5A
Forward Transfer Admittance,
|
y
fs
|
– S
90
80
-2A
70
60
50
40
30
20
10
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
Ta
=-
˚C
25
7
5˚C
25˚
C
Drain
A
Gate-to-Source Voltage, V
GS
– V
No.5909-2/4
FW111
140
120
100
80
60
40
20
0
-60
GS
2A,V
I
D
=-
R
DS(on)
- Tc
-10
7
5
I
F
- V
SD
V
GS
= 0
Static Drain-to-Source
On-State Resistance, R
DS (
on
)
– mΩ
Forward Current, I
F
– A
3
2
-1.0
7
5
V
=-2.5
Ta =7
5˚C
25˚C
-0.2
-0.4
-0.6
=-4V
A,V
GS
I
D
=-5
-0.1
7
5
3
2
-40
-20
0
20
40
60
80
100
120
140
-0.01
0
- 25˚C
-0.8
3
2
-1.0
-1.2
-1.4
Case Temperature, Tc – ˚C
10000
7
5
Diode Forward Voltage, V
SD
– V
-10
Ciss,Coss,Crss - V
DS
f = 1MHz
V
GS
- Qg
V
DS
=-10V
-9
I
D
=-5A
-8
-7
-6
-5
-4
-3
-2
-1
0
0
5
10
15
20
25
30
Ciss,Coss,Crss – pF
3
2
1000
7
5
3
2
100
0
Ciss
Coss
Crss
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Gate-to-Source Voltage, V
GS
– V
Drain-to-Source Voltage,V
DS
– V
1000
7
5
Total Gate Charge, Qg – nC
7
5
I
DP
=32A
3
2
SW Time - I
D
V
DD
=-10V
V
GS
=-4V
Switching Time, SW Time – ns
Drain Current, I
D
– A
3
2
100
7
5
3
2
10
-0.1
t d(off)
tf
tr
-10
7
5
3
2
-1.0
7
5
3
2
t d(on)
2
3
5
7 -1.0
2
3
5
7 -10
2
-0.1
7
5
Ta=25˚C
3
1pulse
2
1unit
Mounted on a ceramic board (1000mm
2
×
0.8mm)
-0.01
-0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
I
D
=5A
DC
A S O
100µs
10
10
0m
s
1m
s
ms
op
er
at
io
n
Operation in this area
is limited by R
DS
(on).
2 3
Drain Current, I
D
– A
Allowable Power Dissipation, P
D
(FET2) – W
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain-to-Source Voltage, V
DS
– V
2.5
P
D
(FET2)
- P
D
(FET1)
– W
P
D
- Ta
M
nte
do
na
Allowable Power Dissipation, P
D
ou
2.0
1.7
ce
ra
mi
1.5
cb
oa
rd
To
tal
(1
Di
00
0
ss
mm
1.0
ip
2
×
0
1u
ati
o
.8m
nit
n
m)
0.5
0
0
Mounted on a ceramic board (1000mm
2
×0.8mm)
20
40
60
80
100
120
140
160
Allowable Power Disipation, P
D
(FET1) – W
Ambient Temperature, Ta – ˚C
No.5909-3/4
FW111
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 1998. Specifications and information herein are subject
to change without notice.
PS No.5909-4/4
微控制器 MCU
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