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T493X337M004CT

产品描述Tantalum Capacitors - Solid SMD 330.UF 4.0V
产品类别无源元件   
文件大小1MB,共26页
制造商KEMET(基美)
官网地址http://www.kemet.com
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T493X337M004CT概述

Tantalum Capacitors - Solid SMD 330.UF 4.0V

T493X337M004CT规格参数

参数名称属性值
产品种类
Product Category
Tantalum Capacitors - Solid SMD
制造商
Manufacturer
KEMET(基美)
电容
Capacitance
330 uF
电压额定值
Voltage Rating
4 V
容差
Tolerance
20 %
ESR500 mOhms
外壳代码 - in
Case Code - in
2917
外壳代码 - mm
Case Code - mm
7343
高度
Height
4.3 mm
制造商库存号
Mfr Case Code
X Case
工作温度范围
Operating Temperature Range
- 55 C to + 125 C
损耗因数 DF
Dissipation Factor DF
8
漏泄电流
Leakage Current
13.2 uA
长度
Length
7.3 mm
封装 / 箱体
Package / Case
2917 (7343 metric)
产品
Product
Tantalum Solid Surface Mounts
工厂包装数量
Factory Pack Quantity
500
端接类型
Termination Style
SMD/SMT
类型
Type
Molded - Hi-Rel COTS
电压额定值 DC
Voltage Rating DC
4 VDC
宽度
Width
6 mm
单位重量
Unit Weight
0.023634 oz

文档预览

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Tantalum Surface Mount Capacitors – High Reliability
T493 Commercial Off-The-Shelf (COTS)
MnO
2
(CWR11 Style)
Overview
The KEMET T493 Series is designed for the Commercial
Off-The-Shelf (COTS) requirements of military and
aerospace applications. This series is a surface mount
product offering various lead-frame plating options,
Weibull grading options, surge current testing, F-Tech (an
improved anode manufacturing process) and Simulated
Breakdown Voltage (SBDV) screening options to improve
long term reliability. Standard, low, and ultra-low ESR
options are available. All lots of this series are conditioned
with MIL–PRF–55365 Group A testing. This series is also
approved for DLA Drawing 07016 (please see part number
list specific to this drawing).
KEMET’s F-Tech eliminates hidden defects in the dielectric
which continue to grow in the field, causing capacitor
failures. Based on the fundamental understanding of
degradation mechanisms in tantalum and niobium
capacitors, F-Tech incorporates multiple process
methodologies. Some minimize the oxygen and carbon
content in the anodes which become contaminants
and can lead to the crystallization of the anodic oxide
dielectric. This process methodology reduces the
contaminants, improving quality of the dielectric. An
additional technology provides a stronger mechanical
connection point between the tantalum lead wire and
tantalum anode, enhancing robustness and product
reliability. The benefit of F-Tech is illustrated by a 2,000
hour, 85°C, 1.32 X rated voltage accelerated life test.
F-Tech parts see no degradation while standard tantalum's
have 1.5 orders of magnitude degradation in leakage
current. F-Tech is currently available for the T493 Series
(select D and X case capacitance values in 25 V and
higher rated voltage). Please contact KEMET for details on
ordering other part types with these capabilities.
KEMET’s patented Simulated Breakdown Screening (SBDS)
is a nondestructive testing technique that simulates the
breakdown voltage (BDV) of a capacitor without damage to
its dielectric or to the general population of capacitors. This
screening identifies hidden defects in the dielectric, providing
the highest level of dielectric testing. SBDS is based on the
simulation of breakdown voltage (BDV), the ultimate test of
the dielectric in a capacitor.
Low BDV indicates defects in the dielectric, and therefore, a
higher probability of failure in the field. High BDV indicates
a stronger dielectric and high-reliability performance in the
field. This new screening method allows KEMET to identify
the breakdown voltage of each individual capacitor and
provide only the strongest capacitors from each lot.
SBDS is currently available on select part types in the T493
and T497 Series. Please contact KEMET for details on
ordering other part types with these capabilities.
KEMET offers these technologies per the following options:
• F-Tech only
• SBDS only
• Combination of both F-Tech and SBDS for the ultimate
protection
Click image above for interactive 3D content
Open PDF in Adobe Reader for full functionality
One world. One KEMET
© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com
T2007_T493 • 12/5/2017
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